Toshiba - JDP2S12CR(TE85L,Q)

JDP2S12CR(TE85L,Q) by Toshiba

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Manufacturer	Toshiba
Manufacturer's Part Number	JDP2S12CR(TE85L,Q)
Description	PIN DIODE; Surface Mount: YES; Maximum Diode Forward Resistance: .7 ohm; Diode Resistive Test Current: 10 mA; Minimum Breakdown Voltage: 180 V; Diode Resistive Test Frequency: 100 MHz;
Datasheet	JDP2S12CR(TE85L,Q) Datasheet

JDP2S12CR(TE85L,Q) Technical Details

NAME	DESCRIPTION
Diode Resistive Test Frequency:	100 MHz
Reverse Test Voltage:	40 V
Diode Type:	PIN DIODE
Minimum Breakdown Voltage:	180 V
Diode Resistive Test Current:	10 mA
Maximum Operating Temperature:	175 Cel
Maximum Diode Forward Resistance:	.7 ohm
Sub-Category:	PIN Diodes
Surface Mount:	YES
Nominal Diode Capacitance:	1 pF

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