Infineon Technologies - BA779E6327

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BA779E6327 by Infineon Technologies

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Manufacturer Infineon Technologies
Manufacturer's Part Number BA779E6327
Description PIN DIODE; Surface Mount: YES; Reverse Test Voltage: 0 V; Diode Resistive Test Current: 1.5 mA; Nominal Minority Carrier Lifetime: 1.6 us; Maximum Diode Forward Resistance: 40 ohm;
Datasheet BA779E6327 Datasheet
In Stock545
NAME DESCRIPTION
Diode Resistive Test Frequency: 100 MHz
Nominal Minority Carrier Lifetime: 1.6 us
Reverse Test Voltage: 0 V
Diode Type: PIN DIODE
Minimum Breakdown Voltage: 50 V
No. of Elements: 1
Diode Resistive Test Current: 1.5 mA
Maximum Operating Temperature: 150 Cel
Maximum Diode Forward Resistance: 40 ohm
Sub-Category: PIN Diodes
Surface Mount: YES
Nominal Diode Capacitance: .26 pF
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