8 PIN Diodes 8

Reset All

Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Diode Capacitance	Technology	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Application	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency
BAR90-081LS	Infineon Technologies	PIN DIODE	BOTTOM	NO LEAD	8	YES	RECTANGULAR	UNSPECIFIED	3 mA	1SE4		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	4	0 V	CHIP CARRIER	PIN Diodes	125 Cel	SWITCHING		R-XBCC-N8	2.3 ohm		Not Qualified	.1 W	.3 pF		.75 us	80 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
RKP451KE	Renesas Electronics	PIN DIODE	BOTTOM	NO LEAD	8	YES	RECTANGULAR	UNSPECIFIED	10 mA	1SE4		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	4	1 V	CHIP CARRIER	PIN Diodes	125 Cel	SWITCHING		R-XBCC-N8	1.3 ohm		Not Qualified	.2 W	.35 pF			30 V				SILICON	100 MHz
RKP452KE	Renesas Electronics	PIN DIODE	BOTTOM	NO LEAD	8	YES	RECTANGULAR	UNSPECIFIED	10 mA	1SE4		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	4	1 V	CHIP CARRIER	PIN Diodes	125 Cel	SWITCHING		R-XBCC-N8	1.3 ohm		Not Qualified	.2 W	.35 pF			30 V				SILICON	100 MHz
RKP454KE	Renesas Electronics	PIN DIODE	BOTTOM	NO LEAD	8	YES	RECTANGULAR	UNSPECIFIED	10 mA	1SE4		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	4	1 V	CHIP CARRIER	PIN Diodes	125 Cel	SWITCHING		R-XBCC-N8	1.3 ohm		Not Qualified	.2 W	.35 pF			30 V				SILICON	100 MHz
RKP453KE	Renesas Electronics	PIN DIODE	BOTTOM	NO LEAD	8	YES	RECTANGULAR	UNSPECIFIED	10 mA	1SE4		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	4	1 V	CHIP CARRIER	PIN Diodes	125 Cel	SWITCHING		R-XBCC-N8	1.3 ohm		Not Qualified	.2 W	.35 pF			30 V				SILICON	100 MHz
HSMP-386J-BLKG	Broadcom	PIN DIODE	DUAL	NO LEAD	8	YES	SQUARE	PLASTIC/EPOXY	50 mA	COMPLEX	L BAND	1.25 pF	POSITIVE-INTRINSIC-NEGATIVE	8	50 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING	MATTE TIN	S-PDSO-N8	.77 ohm	1	Not Qualified	2 W	1.2 pF	LOW DISTORTION	.26 us	100 V	e3	20	260	SILICON	100 MHz
HSMP-386J-TR2G	Broadcom	PIN DIODE	DUAL	NO LEAD	8	YES	SQUARE	PLASTIC/EPOXY	50 mA	COMPLEX	L BAND	1.25 pF	POSITIVE-INTRINSIC-NEGATIVE	8	50 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING	MATTE TIN	S-PDSO-N8	.77 ohm	1	Not Qualified	2 W	1.2 pF	LOW DISTORTION	.26 us	100 V	e3	20	260	SILICON	100 MHz
HSMP-386J-TR1G	Broadcom	PIN DIODE	DUAL	NO LEAD	8	YES	SQUARE	PLASTIC/EPOXY	50 mA	COMPLEX	L BAND	1.25 pF	POSITIVE-INTRINSIC-NEGATIVE	8	50 V	SMALL OUTLINE	PIN Diodes	150 Cel	SWITCHING	MATTE TIN	S-PDSO-N8	.77 ohm	1	Not Qualified	2 W	1.2 pF	LOW DISTORTION	.26 us	100 V	e3	20	260	SILICON	100 MHz

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.