DUAL PIN Diodes 1,341

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Forward Voltage (VF)	Maximum Diode Capacitance	Technology	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	JEDEC-95 Code	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency
MMVL3401T1	Onsemi	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY		1 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE	PIN Diodes		150 Cel	SWITCHING		Tin/Lead (Sn/Pb)	R-PDSO-G2	.7 ohm	1	Not Qualified	.2 W					35 V	e0	30	235	SILICON	100 MHz
MMBV3401LT1G	Onsemi	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY		1 pF	POSITIVE-INTRINSIC-NEGATIVE		1	20 V	SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING		TIN	R-PDSO-G3	.7 ohm	1	Not Qualified	.2 W	1 pF	HIGH RELIABILITY		TO-236AB	35 V	e3	30	260	SILICON	100 MHz
1SV247	Onsemi	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE			.23 pF			1		SMALL OUTLINE	PIN Diodes							5 ohm				.23 pF				50 V				SILICON
BAR63J	STMicroelectronics	PIN DIODE	DUAL	C BEND	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	SWITCHING		MATTE TIN	R-PDSO-C2	2 ohm		Not Qualified	.25 W	.4 pF		.125 us		50 V	e3			SILICON	100 MHz
BA582-T	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY		1.1 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE				SWITCHING			R-PDSO-G2	.7 ohm		Not Qualified						35 V				SILICON
BAP70-04W	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G3	1.9 ohm		Not Qualified	.26 W	.6 pF		1.25 us		50 V	e3	30	260	SILICON	100 MHz
934056664215	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS			.9 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE				ATTENUATOR; SWITCHING		TIN	R-PDSO-G3	.9 ohm	1	Not Qualified	.25 W			.17 us	TO-236AB	30 V	e3			SILICON
934056233115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE				ATTENUATOR; SWITCHING		TIN	R-PDSO-G3	1.35 ohm	1	Not Qualified	.24 W			1.55 us			e3	30	260	SILICON
934056623215	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	S BAND		.45 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE				ATTENUATOR; SWITCHING		TIN	R-PDSO-G3	1.3 ohm	1	Not Qualified	.25 W			.5 us	TO-236AB	100 V	e3			SILICON
934056541115	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND		.32 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE				ATTENUATOR; SWITCHING		TIN	R-PDSO-F2	2 ohm	1	Not Qualified	.715 W			.31 us		175 V	e3			SILICON
BAT18-T	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE			1 pF	POSITIVE-INTRINSIC-NEGATIVE		1	20 V	SMALL OUTLINE			125 Cel	SWITCHING		TIN	R-PDSO-G3	.7 ohm	1	Not Qualified					TO-236AB	35 V	e3	30	260	SILICON
934056545115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON ANODE, 2 ELEMENTS	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE				ATTENUATOR; SWITCHING		Tin (Sn)	R-PDSO-G3	3.8 ohm	1	Not Qualified	.24 W			1.55 us			e3	30	260	SILICON
BAP70-03	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE			.25 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR	-65 Cel	Tin (Sn)	R-PDSO-G2	1.9 ohm	1	Not Qualified	.5 W	.57 pF	HIGH VOLTAGE	1.25 us		50 V	e3	30	260	SILICON	100 MHz
933410710215	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE			1 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			150 Cel	SWITCHING		TIN	R-PDSO-G3	.7 ohm	1	Not Qualified						35 V	e3	30	260	SILICON
BAT18	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE			1 pF	POSITIVE-INTRINSIC-NEGATIVE		1	20 V	SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING		TIN	R-PDSO-G3	.7 ohm	1	Not Qualified		.8 pF			TO-236AB	35 V	e3	30	260	SILICON	200 MHz
934055977215	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON ANODE, 2 ELEMENTS	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G3	1.35 ohm	1	Not Qualified	.25 W			1.55 us	TO-236AB		e3			SILICON
BAP70-04W,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G3	1.9 ohm	1	Not Qualified	.26 W	.6 pF		1.25 us		50 V	e3	30	260	SILICON	100 MHz
934056546135	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE			.9 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-F2	.9 ohm	1	Not Qualified	.715 W			.17 us		30 V	e3	30	260	SILICON
BAP1321-01	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND		.32 pF	POSITIVE-INTRINSIC-NEGATIVE		1	20 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING			R-PDSO-F2	1.3 ohm		Not Qualified	.315 W	.22 pF		.5 us		60 V				SILICON	100 MHz
934056622115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND		.45 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE				ATTENUATOR; SWITCHING		TIN	R-PDSO-G2	1.3 ohm	1	Not Qualified	.5 W			.5 us		100 V	e3			SILICON
934056543115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE				ATTENUATOR; SWITCHING		PURE TIN	R-PDSO-G3	1.8 ohm		Not Qualified	.24 W			.35 us		50 V				SILICON
BAP70Q	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	5	YES	RECTANGULAR	PLASTIC/EPOXY		COMPLEX	S BAND		3 pF	POSITIVE-INTRINSIC-NEGATIVE		4		SMALL OUTLINE				ATTENUATOR		PURE TIN	R-PDSO-G5	1.9 ohm	1	Not Qualified				1.25 us						SILICON
934056560115	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND		.45 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE				ATTENUATOR; SWITCHING		TIN	R-PDSO-F2	1.3 ohm	1	Not Qualified	.715 W			.5 us			e3			SILICON
934056620115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE			.25 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			150 Cel	ATTENUATOR	-65 Cel	TIN	R-PDSO-G2	7 ohm	1	Not Qualified	.5 W			1.25 us		70 V	e3			SILICON
934055687215	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS			.6 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel		-65 Cel	TIN	R-PDSO-G3	5 ohm	1	Not Qualified	.25 W			1.05 us	TO-236AB		e3			SILICON
BAP70-03,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE			.25 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR	-65 Cel	TIN	R-PDSO-G2	1.9 ohm	1	Not Qualified	.5 W	.57 pF	HIGH VOLTAGE	1.25 us		50 V	e3	30	260	SILICON	100 MHz
BAP1321-03,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND		.45 pF	POSITIVE-INTRINSIC-NEGATIVE		1	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G2	1.3 ohm	1	Not Qualified	.5 W	.4 pF		.5 us		60 V	e3	30	260	SILICON	100 MHz
934056536115	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE			.55 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE						Tin (Sn)	R-PDSO-F2	5 ohm	1	Not Qualified	.715 W			1.05 us			e3	30	260	SILICON
BAP27-01	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND		.45 pF	POSITIVE-INTRINSIC-NEGATIVE		1	20 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING			R-PDSO-F2	.95 ohm		Not Qualified	.315 W	.27 pF		.17 us		50 V				SILICON	100 MHz
934056547115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE			.9 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE				ATTENUATOR; SWITCHING		TIN	R-PDSO-G2	.9 ohm	1	Not Qualified	.5 W			.17 us		30 V	e3			SILICON
BAP1321-04T/R	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	S BAND		.45 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G3	1.3 ohm		Not Qualified	.25 W			.5 us	TO-236AB		e3			SILICON
934056232115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE				ATTENUATOR; SWITCHING		PURE TIN	R-PDSO-G3	1.35 ohm	1	Not Qualified	.24 W			1.55 us						SILICON
934056634315	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE			.9 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE				ATTENUATOR; SWITCHING			R-PDSO-F2	.9 ohm		Not Qualified	.315 W			.17 us		30 V				SILICON
BAT18T/R	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE			1 pF	POSITIVE-INTRINSIC-NEGATIVE		1	20 V	SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING		TIN	R-PDSO-G3	.7 ohm	1	Not Qualified		.75 pF			TO-236AB	35 V	e3	30	260	SILICON	100 MHz
934051250115	NXP Semiconductors	PIN DIODE	DUAL	C BEND	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	LOW FREQUENCY		6 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE				ATTENUATOR			R-PDSO-C2	10 ohm		Not Qualified				25 us	DO-214AC			NOT SPECIFIED	NOT SPECIFIED	SILICON
934055688215	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE				ATTENUATOR; SWITCHING		TIN	R-PDSO-G3	1.35 ohm	1	Not Qualified	.25 W			1.55 us	TO-236AB		e3			SILICON
934056546115	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE			.9 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-F2	.9 ohm	1	Not Qualified	.715 W			.17 us		30 V	e3	30	260	SILICON
BAP70-05	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	COMMON CATHODE, 2 ELEMENTS			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	Tin (Sn)	R-PDSO-G3	1.9 ohm	1	Not Qualified	.25 W	.6 pF		1.25 us	TO-236AB	50 V	e3	30	260	SILICON	100 MHz
934056820315	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND		.32 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE				ATTENUATOR; SWITCHING			R-PDSO-F2	1.17 ohm		Not Qualified	.315 W			.3 us		50 V				SILICON
934056619115	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE			.25 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			150 Cel	ATTENUATOR	-65 Cel	Tin (Sn)	R-PDSO-F2	7 ohm	1	Not Qualified	.415 W			1.25 us		70 V	e3	30	260	SILICON
BAP70-05,215	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	COMMON CATHODE, 2 ELEMENTS			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2	0 V	SMALL OUTLINE	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G3	1.9 ohm	1	Not Qualified	.25 W	.6 pF		1.25 us	TO-236AB	50 V	e3	30	260	SILICON	100 MHz
934056821315	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND		.32 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE				ATTENUATOR; SWITCHING			R-PDSO-F2	1.3 ohm		Not Qualified	.315 W			.5 us				NOT SPECIFIED	NOT SPECIFIED	SILICON
934056539115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS			.55 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel		-65 Cel	TIN	R-PDSO-G3	2.5 ohm	1	Not Qualified	.24 W			.55 us			e3			SILICON
934055511115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE				ATTENUATOR; SWITCHING		TIN	R-PDSO-G2	1.35 ohm	1	Not Qualified	.5 W			1.55 us			e3			SILICON
934056532115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS			.6 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE						PURE TIN	R-PDSO-G3	5 ohm		Not Qualified	.24 W			1.05 us						SILICON
BAT18TRL	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE			1 pF	POSITIVE-INTRINSIC-NEGATIVE		1	20 V	SMALL OUTLINE			125 Cel	SWITCHING		TIN	R-PDSO-G3	.7 ohm	1	Not Qualified					TO-236AB	35 V	e3	30	260	SILICON
BAP70AM	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	6	YES	RECTANGULAR	PLASTIC/EPOXY		2 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		1.1 V	.25 pF	POSITIVE-INTRINSIC-NEGATIVE	.1 uA	4	50 V	SMALL OUTLINE	Other Diodes	50 V	150 Cel	ATTENUATOR	-65 Cel	TIN	R-PDSO-G6	1.9 ohm		Not Qualified	.3 W		LOW DISTORTION	1.25 us			e3	30	260	SILICON
934055889115	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE			.55 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE						Tin (Sn)	R-PDSO-F2	2.5 ohm	1	Not Qualified	.715 W					60 V	e3	30	260	SILICON

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.