Broadcom PIN Diodes 837

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Forward Voltage (VF)	Maximum Diode Capacitance	Technology	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency
5082-3304	Broadcom	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE	HIGH FREQUENCY TO C BAND		.32 pF	POSITIVE-INTRINSIC-NEGATIVE		1		MICROWAVE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel		O-CEMW-N2	1.2 ohm			Not Qualified	3 W			.1 us	250 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
HMPP-3895-TR2	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SEPARATE, 2 ELEMENTS	ULTRA HIGH FREQUENCY		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2	5 V	CHIP CARRIER	PIN Diodes		150 Cel	SWITCHING		Tin (Sn)	R-CBCC-N4	2.5 ohm	1		Not Qualified		.2 pF		.2 us	100 V	e3	20	260	SILICON	100 MHz
5082-3080#T50	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE			.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	2.5 ohm	1	ISOLATED	Not Qualified	.25 W	.4 pF	LOW HARMONIC DISTORTION	1.3 us	100 V	e0			SILICON	100 MHz
5082-0047	Broadcom	PIN DIODE	UPPER	NO LEAD	1	YES	SQUARE	UNSPECIFIED		SINGLE			.15 pF	POSITIVE-INTRINSIC-NEGATIVE		1		UNCASED CHIP			150 Cel	ATTENUATOR; SWITCHING	-65 Cel		S-XUUC-N1				Not Qualified				.4 us	150 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
HMPP-3864-TR2	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED		SEPARATE, 2 ELEMENTS				POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				ATTENUATOR; SWITCHING		TIN	R-CBCC-N4		1		Not Qualified				.5 us	50 V	e3			SILICON
SPD2025-4X-GP	Broadcom
HMPP-3893-BLK	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				SWITCHING		TIN	R-XBCC-N4	2.5 ohm	1		Not Qualified				.2 us	100 V	e3			SILICON
5082-3188#T25	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	10 mA	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1 pF	POSITIVE-INTRINSIC-NEGATIVE		1	20 V	LONG FORM	PIN Diodes		150 Cel	SWITCHING			O-LALF-W2	.6 ohm		ISOLATED	Not Qualified	.25 W	1 pF	LOW HARMONIC DISTORTION	.07 us	35 V				SILICON	100 MHz
HMPP-3865	Broadcom	PIN DIODE	UPPER	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED	1 mA	SEPARATE, 2 ELEMENTS			.2 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	UNCASED CHIP	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-XUUC-N4	22 ohm	1		Not Qualified		.2 pF		.5 us	50 V	e3	20	260	SILICON	100 MHz
HMPP-3863-BLK	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED		SEPARATE, 2 ELEMENTS				POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				ATTENUATOR; SWITCHING		TIN	R-CBCC-N4		1		Not Qualified				.5 us	50 V	e3			SILICON
HMPP-3860-BLK	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE	ULTRA HIGH FREQUENCY		.2 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	CHIP CARRIER	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-CBCC-N4	22 ohm	1		Not Qualified		.2 pF		.5 us	50 V	e3	20	260	SILICON	100 MHz
HMPP-3864-BLK	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED		SEPARATE, 2 ELEMENTS				POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				ATTENUATOR; SWITCHING		TIN	R-CBCC-N4		1		Not Qualified				.5 us	50 V	e3			SILICON
HPND-4028	Broadcom	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	UNSPECIFIED	10 mA	SINGLE			.045 pF	POSITIVE-INTRINSIC-NEGATIVE		1	30 V	MICROWAVE	PIN Diodes		150 Cel	SWITCHING		GOLD	R-XDMW-F2	3 ohm	1		Not Qualified		.045 pF		.036 us	60 V	e4		220	SILICON	100 MHz
5082-3039	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE			.25 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	1.25 ohm	1	ISOLATED	Not Qualified	.25 W	.25 pF	LOW HARMONIC DISTORTION	.1 us	150 V	e0			SILICON	100 MHz
5082-3188#T50	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	10 mA	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1 pF	POSITIVE-INTRINSIC-NEGATIVE		1	20 V	LONG FORM	PIN Diodes		150 Cel	SWITCHING			O-LALF-W2	.6 ohm		ISOLATED	Not Qualified	.25 W	1 pF	LOW HARMONIC DISTORTION	.07 us	35 V				SILICON	100 MHz
ASML-5822-TR2	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		.34 V	.8 pF	POSITIVE-INTRINSIC-NEGATIVE	.1 uA	2	1 V	SMALL OUTLINE	Other Diodes	50 V	150 Cel	LIMITER	-65 Cel	TIN LEAD	R-PDSO-G3	.6 ohm			Not Qualified				.07 us	50 V	e0			SILICON
1N5767#T25	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE			.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	2.5 ohm	1	ISOLATED	Not Qualified	.25 W	.4 pF	LOW HARMONIC DISTORTION	1.3 us	100 V	e0			SILICON	100 MHz
HMPP-389T	Broadcom	PIN DIODE	UPPER	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED						POSITIVE-INTRINSIC-NEGATIVE				UNCASED CHIP			150 Cel			Tin (Sn)	R-XUUC-N4		1		Not Qualified						e3	20	260	SILICON
SPD2020-4X	Broadcom
5082-3039#T25	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE			.25 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	1.25 ohm	1	ISOLATED	Not Qualified	.25 W	.25 pF	LOW HARMONIC DISTORTION	.1 us	150 V	e0			SILICON	100 MHz
SPD2012-4	Broadcom
HMPP-3895	Broadcom	PIN DIODE	UPPER	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2		UNCASED CHIP			150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-XUUC-N4	3.8 ohm	1		Not Qualified				.2 us	50 V	e3	20	260	SILICON
SPD2014-4	Broadcom
HMPP-3893-TR1	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				SWITCHING		TIN	R-XBCC-N4	2.5 ohm	1		Not Qualified				.2 us	100 V	e3			SILICON
HPND-4005	Broadcom	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	20 mA	SINGLE			.02 pF	POSITIVE-INTRINSIC-NEGATIVE		1	10 V	MICROWAVE	PIN Diodes		175 Cel	ATTENUATOR; LIMITER; SWITCHING	-65 Cel		R-CDMW-F2	6.5 ohm			Not Qualified	.25 W	.017 pF		.1 us	100 V			220	SILICON	100 MHz
SPD2012-12-GP	Broadcom
HMPP-3894-TR2	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				SWITCHING		TIN	R-XBCC-N4	2.5 ohm	1		Not Qualified				.2 us	100 V	e3			SILICON
5082-3306	Broadcom	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE	KU BAND		.45 pF	POSITIVE-INTRINSIC-NEGATIVE		1		MICROWAVE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel		O-CEMW-N2	1 ohm			Not Qualified	1.25 W				70 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
5082-3001#T25	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE			.25 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING			O-LALF-W2	1 ohm		ISOLATED	Not Qualified	.25 W	.25 pF	LOW HARMONIC DISTORTION	.1 us	200 V				SILICON	100 MHz
5082-3379#T50	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE			.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2		1	ISOLATED	Not Qualified	.25 W	.4 pF	LOW HARMONIC DISTORTION	1.3 us	50 V	e0			SILICON
ASML-5822-BLK	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		.34 V	.8 pF	POSITIVE-INTRINSIC-NEGATIVE	.1 uA	2	1 V	SMALL OUTLINE	Other Diodes	50 V	150 Cel	LIMITER	-65 Cel	TIN LEAD	R-PDSO-G3	.6 ohm			Not Qualified				.07 us	50 V	e0			SILICON
HMPP-3894-TR1	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				SWITCHING		TIN	R-XBCC-N4	2.5 ohm	1		Not Qualified				.2 us	100 V	e3			SILICON
5082-3077#T50	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	1.5 ohm	1	ISOLATED	Not Qualified	.25 W	.3 pF	LOW HARMONIC DISTORTION	.1 us	200 V	e0			SILICON	100 MHz
5082-3303	Broadcom	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE	HIGH FREQUENCY TO C BAND		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1		MICROWAVE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel		O-CEMW-N2	1.2 ohm			Not Qualified	3 W			.1 us	200 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
HMPP-3892-TR2	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SEPARATE, 2 ELEMENTS	ULTRA HIGH FREQUENCY		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2	5 V	CHIP CARRIER	PIN Diodes		150 Cel	SWITCHING		Tin (Sn)	R-CBCC-N4	2.5 ohm	1		Not Qualified		.2 pF		.2 us	100 V	e3	20	260	SILICON	100 MHz
HPND-4166	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1		LONG FORM			150 Cel	ATTENUATOR	-65 Cel		O-LALF-W2	1.5 ohm		ISOLATED	Not Qualified	.25 W			.1 us	100 V				SILICON
SPD2012-4-GP	Broadcom
1N5719DIE	Broadcom	PIN DIODE								SINGLE			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1						ATTENUATOR; SWITCHING				1.25 ohm		ISOLATED	Not Qualified	.25 W		LOW HARMONIC DISTORTION	.1 us	150 V				SILICON
SPD2004	Broadcom
1N5767	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE			.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1		LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN LEAD	O-LALF-W2	2.5 ohm	1	ISOLATED	Not Qualified	.25 W	.4 pF	LOW HARMONIC DISTORTION	1.3 us	100 V	e0			SILICON	100 MHz
HPND4018	Broadcom	PIN DIODE				YES											30 V		PIN Diodes		150 Cel			Tin/Lead (Sn/Pb)							.025 pF		.026 us	60 V	e0
ASML-5822-TR1	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	ULTRA HIGH FREQUENCY	.34 V	.8 pF	POSITIVE-INTRINSIC-NEGATIVE	.1 uA	2	20 V	SMALL OUTLINE	Other Diodes	50 V	150 Cel	LIMITER		TIN LEAD	R-PDSO-G3	.6 ohm			Not Qualified		.53 pF		.07 us	50 V	e0			SILICON	100 MHz
HMPP-3890-TR2	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE	ULTRA HIGH FREQUENCY		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1	5 V	CHIP CARRIER	PIN Diodes		150 Cel	SWITCHING		Tin (Sn)	R-CBCC-N4	2.5 ohm	1		Not Qualified		.2 pF		.2 us	100 V	e3	20	260	SILICON	100 MHz
5082-3379#T25	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE			.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2		1	ISOLATED	Not Qualified	.25 W	.4 pF	LOW HARMONIC DISTORTION	1.3 us	50 V	e0			SILICON
HPND-4166G	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1		LONG FORM			150 Cel	ATTENUATOR	-65 Cel		O-LALF-W2	1.5 ohm		ISOLATED	Not Qualified	.25 W			.1 us	100 V				SILICON
SPD2025-4X	Broadcom
HMPP-389T-BLK	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE	ULTRA HIGH FREQUENCY		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1	5 V	CHIP CARRIER	PIN Diodes		150 Cel	SWITCHING		Tin (Sn)	R-CBCC-N4	2.5 ohm	1		Not Qualified		.2 pF		.2 us	100 V	e3	20	260	SILICON	100 MHz
5082-3077	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	1.5 ohm	1	ISOLATED	Not Qualified	.25 W	.3 pF	LOW HARMONIC DISTORTION	.1 us	200 V	e0			SILICON	100 MHz

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.