Broadcom PIN Diodes 837

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Forward Voltage (VF)	Maximum Diode Capacitance	Technology	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency
5082-3081#T25	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE			.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	3.5 ohm	1	ISOLATED	Not Qualified	.25 W	.4 pF	LOW HARMONIC DISTORTION	2.5 us	100 V	e0			SILICON	100 MHz
HMPP-3893-TR2	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				SWITCHING		TIN	R-XBCC-N4	2.5 ohm	1		Not Qualified				.2 us	100 V	e3			SILICON
SPD2020-4X-GP	Broadcom
5082-3080#T25	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE			.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	2.5 ohm	1	ISOLATED	Not Qualified	.25 W	.4 pF	LOW HARMONIC DISTORTION	1.3 us	100 V	e0			SILICON	100 MHz
5082-3379	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE			.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	8 ohm	1	ISOLATED	Not Qualified	.25 W	.4 pF	LOW HARMONIC DISTORTION	1.3 us	50 V	e0			SILICON	100 MHz
HMPP-3890-TR1	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE	ULTRA HIGH FREQUENCY		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1	5 V	CHIP CARRIER	PIN Diodes		150 Cel	SWITCHING		Tin (Sn)	R-CBCC-N4	2.5 ohm	1		Not Qualified		.2 pF		.2 us	100 V	e3	20	260	SILICON	100 MHz
HMPP-3860-TR1	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE	ULTRA HIGH FREQUENCY		.2 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	CHIP CARRIER	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-CBCC-N4	22 ohm	1		Not Qualified		.2 pF		.5 us	50 V	e3	20	260	SILICON	100 MHz
ASML-5829	Broadcom	PIN DIODE																																		NOT SPECIFIED	NOT SPECIFIED
ASML-5829-BLK	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	ULTRA HIGH FREQUENCY	.34 V	.375 pF	POSITIVE-INTRINSIC-NEGATIVE	.1 uA	2	5 V	SMALL OUTLINE	Other Diodes	100 V	150 Cel	LIMITER		TIN LEAD	R-PDSO-G3	2.5 ohm			Not Qualified		.28 pF		.2 us	100 V	e0			SILICON	100 MHz
HPND-4038	Broadcom	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	UNSPECIFIED	10 mA	SINGLE			.065 pF	POSITIVE-INTRINSIC-NEGATIVE		1	30 V	MICROWAVE	PIN Diodes		150 Cel	SWITCHING		GOLD	R-XDMW-F2	2 ohm	1		Not Qualified		.045 pF		.045 us	60 V	e4		220	SILICON	100 MHz
ASML-5829-TR2G	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS			.375 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel	LIMITER		MATTE TIN	R-PDSO-G3	2.5 ohm	1		Not Qualified				.2 us	100 V	e3			SILICON
5082-3201	Broadcom	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE	HIGH FREQUENCY TO C BAND		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1		MICROWAVE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel		O-CEMW-N2	1.2 ohm			Not Qualified	3 W			.1 us	200 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
5082-3081#T50	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE			.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	3.5 ohm	1	ISOLATED	Not Qualified	.25 W	.4 pF	LOW HARMONIC DISTORTION	2.5 us	100 V	e0			SILICON	100 MHz
HMPP-3862-TR2	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SEPARATE, 2 ELEMENTS	ULTRA HIGH FREQUENCY		.2 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	CHIP CARRIER	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-CBCC-N4	22 ohm	1		Not Qualified		.2 pF		.5 us	50 V	e3	20	260	SILICON	100 MHz
5961-01-224-6231	Broadcom	PIN DIODE				NO			10 mA								20 V		PIN Diodes		150 Cel					.5 ohm	1				1 pF		.07 us	35 V					100 MHz
5082-0030	Broadcom	PIN DIODE	UPPER	NO LEAD	1	YES	SQUARE	UNSPECIFIED		SINGLE			.12 pF	POSITIVE-INTRINSIC-NEGATIVE		1		UNCASED CHIP			150 Cel	ATTENUATOR; SWITCHING	-65 Cel		S-XUUC-N1				Not Qualified				.4 us	150 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
HPND-0003	Broadcom	PIN DIODE	UPPER	NO LEAD	1	YES	SQUARE	UNSPECIFIED		SINGLE			1.2 pF	POSITIVE-INTRINSIC-NEGATIVE		1		UNCASED CHIP			150 Cel	ATTENUATOR; LIMITER; SWITCHING	-65 Cel		S-XUUC-N1				Not Qualified	.25 W			.07 us	35 V				SILICON
5082-3188	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	10 mA	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1 pF	POSITIVE-INTRINSIC-NEGATIVE		1	20 V	LONG FORM	PIN Diodes		150 Cel	SWITCHING	-65 Cel	TIN LEAD	O-LALF-W2	.6 ohm		ISOLATED	Not Qualified	.25 W	1 pF	LOW HARMONIC DISTORTION	.07 us	35 V	e0			SILICON	100 MHz
5082-3340	Broadcom	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	METAL		SINGLE	HIGH FREQUENCY TO KU BAND		.1 pF	POSITIVE-INTRINSIC-NEGATIVE		1		FLANGE MOUNT			125 Cel	ATTENUATOR; SWITCHING	-65 Cel		R-MDFM-F2	1 ohm		CATHODE	Not Qualified	2.5 W			.4 us			NOT SPECIFIED	NOT SPECIFIED	SILICON
HMPP-3890-BLK	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE	ULTRA HIGH FREQUENCY		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1	5 V	CHIP CARRIER	PIN Diodes		150 Cel	SWITCHING		Tin (Sn)	R-CBCC-N4	2.5 ohm	1		Not Qualified		.2 pF		.2 us	100 V	e3	20	260	SILICON	100 MHz
5082-3001#T50	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE			.25 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING			O-LALF-W2	1 ohm		ISOLATED	Not Qualified	.25 W	.25 pF	LOW HARMONIC DISTORTION	.1 us	200 V				SILICON	100 MHz
HMPP-3860	Broadcom	PIN DIODE	UPPER	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED	1 mA	SINGLE			.2 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	UNCASED CHIP	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-XUUC-N4	22 ohm	1		Not Qualified		.2 pF		.5 us	50 V	e3	20	260	SILICON	100 MHz
1N5719	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1	100 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN LEAD	O-LALF-W2	1.25 ohm	1	ISOLATED	Not Qualified	.25 W	.25 pF	LOW HARMONIC DISTORTION	.1 us	150 V	e0			SILICON	100 MHz
ASML-5829-TR2	Broadcom	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		.34 V	.375 pF	POSITIVE-INTRINSIC-NEGATIVE	.1 uA	2	1 V	SMALL OUTLINE	Other Diodes	100 V	150 Cel	LIMITER	-65 Cel	TIN LEAD	R-PDSO-G3	2.5 ohm			Not Qualified				.2 us	100 V	e0			SILICON
HMPP-3863-TR1	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED		SEPARATE, 2 ELEMENTS				POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				ATTENUATOR; SWITCHING		TIN	R-CBCC-N4		1		Not Qualified				.5 us	50 V	e3			SILICON
5082-3077#T25	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	1.5 ohm	1	ISOLATED	Not Qualified	.25 W	.3 pF	LOW HARMONIC DISTORTION	.1 us	200 V	e0			SILICON	100 MHz
HMPP-3862-BLK	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SEPARATE, 2 ELEMENTS	ULTRA HIGH FREQUENCY		.2 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	CHIP CARRIER	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-CBCC-N4	22 ohm	1		Not Qualified		.2 pF		.5 us	50 V	e3	20	260	SILICON	100 MHz
1N5719#T50	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1	100 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	1.25 ohm	1	ISOLATED	Not Qualified	.25 W	.3 pF	LOW HARMONIC DISTORTION	.1 us	150 V	e0			SILICON	100 MHz
5082-3039#T50	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE			.25 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	1.25 ohm	1	ISOLATED	Not Qualified	.25 W	.25 pF	LOW HARMONIC DISTORTION	.1 us	150 V	e0			SILICON	100 MHz
HMPP-3865-TR2	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SEPARATE, 2 ELEMENTS	ULTRA HIGH FREQUENCY		.2 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	CHIP CARRIER	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-CBCC-N4	22 ohm	1		Not Qualified		.2 pF		.5 us	50 V	e3	20	260	SILICON	100 MHz
1N5719#T25	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	100 mA	SINGLE			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1	100 V	LONG FORM	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		TIN LEAD	O-LALF-W2	1.25 ohm	1	ISOLATED	Not Qualified	.25 W	.3 pF	LOW HARMONIC DISTORTION	.1 us	150 V	e0			SILICON	100 MHz
5082-3040	Broadcom	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	METAL		SINGLE	HIGH FREQUENCY TO KU BAND		.1 pF	POSITIVE-INTRINSIC-NEGATIVE		1		FLANGE MOUNT			125 Cel	ATTENUATOR; SWITCHING	-65 Cel		R-MDFM-F2	1 ohm		ANODE	Not Qualified	2.5 W			.4 us			NOT SPECIFIED	NOT SPECIFIED	SILICON
1N5767#T50	Broadcom	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE			.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1		LONG FORM				ATTENUATOR; SWITCHING			O-LALF-W2	2.5 ohm		ISOLATED	Not Qualified	.25 W		LOW HARMONIC DISTORTION	1.3 us	100 V				SILICON
HMPP-389T-TR1	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE	ULTRA HIGH FREQUENCY		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1	5 V	CHIP CARRIER	PIN Diodes		150 Cel	SWITCHING		Tin (Sn)	R-CBCC-N4	2.5 ohm	1		Not Qualified		.2 pF		.2 us	100 V	e3	20	260	SILICON	100 MHz
HMPP-3865-BLK	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SEPARATE, 2 ELEMENTS	ULTRA HIGH FREQUENCY		.2 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	CHIP CARRIER	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-CBCC-N4	22 ohm	1		Not Qualified		.2 pF		.5 us	50 V	e3	20	260	SILICON	100 MHz
SPD2012-12	Broadcom
HMPP-3860-TR2	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SINGLE	ULTRA HIGH FREQUENCY		.2 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	CHIP CARRIER	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-CBCC-N4	22 ohm	1		Not Qualified		.2 pF		.5 us	50 V	e3	20	260	SILICON	100 MHz
5082-3101	Broadcom	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE	HIGH FREQUENCY TO C BAND		.32 pF	POSITIVE-INTRINSIC-NEGATIVE		1		MICROWAVE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel		O-CEMW-N2	1.2 ohm			Not Qualified	1 W			.1 us	200 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
5961-01-064-2504	Broadcom	PIN DIODE				NO			10 mA								20 V		PIN Diodes		150 Cel					.5 ohm	1				1 pF		.07 us	35 V					100 MHz
HMPP-3890	Broadcom	PIN DIODE	UPPER	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SINGLE			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1		UNCASED CHIP			150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-XUUC-N4	3.8 ohm	1		Not Qualified				.2 us	50 V	e3	20	260	SILICON
HMPP-3892-BLK	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SEPARATE, 2 ELEMENTS	ULTRA HIGH FREQUENCY		.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2	5 V	CHIP CARRIER	PIN Diodes		150 Cel	SWITCHING		Tin (Sn)	R-CBCC-N4	2.5 ohm	1		Not Qualified		.2 pF		.2 us	100 V	e3	20	260	SILICON	100 MHz
5082-3202	Broadcom	PIN DIODE	END	NO LEAD	2	YES	ROUND	CERAMIC, METAL-SEALED COFIRED		SINGLE	HIGH FREQUENCY TO C BAND		.32 pF	POSITIVE-INTRINSIC-NEGATIVE		1		MICROWAVE			150 Cel	ATTENUATOR; SWITCHING	-65 Cel		O-CEMW-N2	1.2 ohm			Not Qualified	3 W			.1 us	300 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
SPD2004-GP	Broadcom
HMPP-3894-BLK	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED		SEPARATE, 2 ELEMENTS			.3 pF	POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				SWITCHING		TIN	R-XBCC-N4	2.5 ohm	1		Not Qualified				.2 us	100 V	e3			SILICON
HPND-0001	Broadcom	PIN DIODE	UPPER	NO LEAD	1	YES	SQUARE	UNSPECIFIED		SINGLE			.2 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	UNCASED CHIP	PIN Diodes		150 Cel	ATTENUATOR; LIMITER; SWITCHING			S-XUUC-N1				Not Qualified	.25 W	.2 pF		1.8 us	100 V				SILICON
HMPP-3863-TR2	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED		SEPARATE, 2 ELEMENTS				POSITIVE-INTRINSIC-NEGATIVE		2		CHIP CARRIER				ATTENUATOR; SWITCHING		TIN	R-CBCC-N4		1		Not Qualified				.5 us	50 V	e3			SILICON
HMPP-3862-TR1	Broadcom	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	1 mA	SEPARATE, 2 ELEMENTS	ULTRA HIGH FREQUENCY		.2 pF	POSITIVE-INTRINSIC-NEGATIVE		2	50 V	CHIP CARRIER	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING		Tin (Sn)	R-CBCC-N4	22 ohm	1		Not Qualified		.2 pF		.5 us	50 V	e3	20	260	SILICON	100 MHz
5082-0012	Broadcom	PIN DIODE	UPPER	NO LEAD	1	YES	SQUARE	UNSPECIFIED		SINGLE			.12 pF	POSITIVE-INTRINSIC-NEGATIVE		1	50 V	UNCASED CHIP	PIN Diodes		150 Cel	ATTENUATOR; SWITCHING	-65 Cel		S-XUUC-N1		1		Not Qualified		.12 pF		.4 us	150 V				SILICON

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.