NXP Semiconductors PIN Diodes 205

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Diode Capacitance	Technology	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	JEDEC-95 Code	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency
BAP64-06,215	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	COMMON ANODE, 2 ELEMENTS	S BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G3	1.35 ohm	1		Not Qualified	.25 W	.52 pF	HIGH VOLTAGE	1.55 us	TO-236AB	175 V	e3	30	260	SILICON	100 MHz
BAP50-04W,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		.6 pF	POSITIVE-INTRINSIC-NEGATIVE	2	0 V	SMALL OUTLINE	PIN Diodes	150 Cel		-65 Cel	TIN	R-PDSO-G3	5 ohm	1		Not Qualified		.45 pF		1.05 us		50 V	e3	30	260	SILICON	100 MHz
BAP64-05,215	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	COMMON CATHODE, 2 ELEMENTS	S BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G3	40 ohm	1		Not Qualified	.25 W	.52 pF	HIGH VOLTAGE	1.55 us		175 V	e3	30	260	SILICON	100 MHz
BAP64-02,115	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-F2	1.35 ohm	1		Not Qualified	.715 W	.48 pF	HIGH VOLTAGE	1.55 us		175 V	e3	30	260	SILICON	100 MHz
BAP50-05,215	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	COMMON CATHODE, 2 ELEMENTS		.6 pF	POSITIVE-INTRINSIC-NEGATIVE	2	1 V	SMALL OUTLINE	PIN Diodes	150 Cel		-65 Cel	TIN	R-PDSO-G3	40 ohm	1		Not Qualified	.25 W	.6 pF				50 V	e3	30	260	SILICON	100 MHz
BAP65-03,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE		.9 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G2	.9 ohm	1		Not Qualified	.5 W	.65 pF		.17 us		30 V	e3	30	260	SILICON	100 MHz
BAP51-02,115	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE		.55 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel		-65 Cel	TIN	R-PDSO-F2	2.5 ohm	1		Not Qualified	.715 W	.4 pF				60 V	e3	30	260	SILICON	100 MHz
BAP51-02,315	NXP Semiconductors	PIN DIODE																						1											260
BAP64-04W,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	S BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G3	1.35 ohm	1		Not Qualified	.24 W	.52 pF		1.55 us		100 V	e3	30	260	SILICON	100 MHz
BAP50-03,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE		.55 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V	SMALL OUTLINE	PIN Diodes	150 Cel		-65 Cel	TIN	R-PDSO-G2	5 ohm	1		Not Qualified	.5 W	.55 pF				50 V	e3	30	260	SILICON	100 MHz
BAP65-02,115	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE		.9 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-F2	.9 ohm	1		Not Qualified	.715 W	.65 pF	HIGH VOLTAGE	.17 us		30 V	e3	30	260	SILICON	100 MHz
BAP50-03,135	NXP Semiconductors	PIN DIODE				YES			.5 mA						1 V		PIN Diodes	150 Cel			TIN		40 ohm	1				.55 pF				50 V	e3	30	260		100 MHz
BAP51-03,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE		.55 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V	SMALL OUTLINE	PIN Diodes	150 Cel		-65 Cel	TIN	R-PDSO-G2	2.5 ohm	1		Not Qualified	.5 W	.55 pF		.55 us		60 V	e3	30	260	SILICON	100 MHz
BAP64-03,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G2	1.35 ohm	1		Not Qualified	.5 W	.52 pF	HIGH VOLTAGE	1.55 us		175 V	e3	30	260	SILICON	100 MHz
BA582-T	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY	1.1 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE			SWITCHING			R-PDSO-G2	.7 ohm			Not Qualified						35 V				SILICON
BAP70-04W	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		.3 pF	POSITIVE-INTRINSIC-NEGATIVE	2	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G3	1.9 ohm			Not Qualified	.26 W	.6 pF		1.25 us		50 V	e3	30	260	SILICON	100 MHz
934056664215	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS		.9 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE			ATTENUATOR; SWITCHING		TIN	R-PDSO-G3	.9 ohm	1		Not Qualified	.25 W			.17 us	TO-236AB	30 V	e3			SILICON
934056233115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	S BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE			ATTENUATOR; SWITCHING		TIN	R-PDSO-G3	1.35 ohm	1		Not Qualified	.24 W			1.55 us			e3	30	260	SILICON
934059353315	NXP Semiconductors	PIN DIODE
BAQ800	NXP Semiconductors	PIN DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS		SINGLE	LOW FREQUENCY	12 pF	POSITIVE-INTRINSIC-NEGATIVE	1		LONG FORM			ATTENUATOR			O-LALF-W2	10 ohm		ISOLATED	Not Qualified			LOW LEAKAGE, LOW DISTORTION	20 us						SILICON
934056623215	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS	S BAND	.45 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE			ATTENUATOR; SWITCHING		TIN	R-PDSO-G3	1.3 ohm	1		Not Qualified	.25 W			.5 us	TO-236AB	100 V	e3			SILICON
934056541115	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.32 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE			ATTENUATOR; SWITCHING		TIN	R-PDSO-F2	2 ohm	1		Not Qualified	.715 W			.31 us		175 V	e3			SILICON
BAT18-T	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE		1 pF	POSITIVE-INTRINSIC-NEGATIVE	1	20 V	SMALL OUTLINE		125 Cel	SWITCHING		TIN	R-PDSO-G3	.7 ohm	1		Not Qualified					TO-236AB	35 V	e3	30	260	SILICON
934056545115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON ANODE, 2 ELEMENTS	S BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE			ATTENUATOR; SWITCHING		Tin (Sn)	R-PDSO-G3	3.8 ohm	1		Not Qualified	.24 W			1.55 us			e3	30	260	SILICON
BAP70-03	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE		.25 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR	-65 Cel	Tin (Sn)	R-PDSO-G2	1.9 ohm	1		Not Qualified	.5 W	.57 pF	HIGH VOLTAGE	1.25 us		50 V	e3	30	260	SILICON	100 MHz
933410710215	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE		1 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel	SWITCHING		TIN	R-PDSO-G3	.7 ohm	1		Not Qualified						35 V	e3	30	260	SILICON
934061238315	NXP Semiconductors	PIN DIODE
BAT18	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	5 mA	SINGLE		1 pF	POSITIVE-INTRINSIC-NEGATIVE	1	20 V	SMALL OUTLINE	PIN Diodes	125 Cel	SWITCHING		TIN	R-PDSO-G3	.7 ohm	1		Not Qualified		.8 pF			TO-236AB	35 V	e3	30	260	SILICON	200 MHz
934055977215	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON ANODE, 2 ELEMENTS	S BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G3	1.35 ohm	1		Not Qualified	.25 W			1.55 us	TO-236AB		e3			SILICON
BAP70-04W,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		.3 pF	POSITIVE-INTRINSIC-NEGATIVE	2	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G3	1.9 ohm	1		Not Qualified	.26 W	.6 pF		1.25 us		50 V	e3	30	260	SILICON	100 MHz
BAP70-02T/R	NXP Semiconductors	PIN DIODE				YES			.5 mA						0 V		PIN Diodes	150 Cel					100 ohm					.57 pF		1.25 us		50 V					100 MHz
934056546135	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE		.9 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-F2	.9 ohm	1		Not Qualified	.715 W			.17 us		30 V	e3	30	260	SILICON
BAP1321-01	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.32 pF	POSITIVE-INTRINSIC-NEGATIVE	1	20 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING			R-PDSO-F2	1.3 ohm			Not Qualified	.315 W	.22 pF		.5 us		60 V				SILICON	100 MHz
934056622115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE			ATTENUATOR; SWITCHING		TIN	R-PDSO-G2	1.3 ohm	1		Not Qualified	.5 W			.5 us		100 V	e3			SILICON
934056543115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	S BAND	.35 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE			ATTENUATOR; SWITCHING		PURE TIN	R-PDSO-G3	1.8 ohm			Not Qualified	.24 W			.35 us		50 V				SILICON
BAP70Q	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	5	YES	RECTANGULAR	PLASTIC/EPOXY		COMPLEX	S BAND	3 pF	POSITIVE-INTRINSIC-NEGATIVE	4		SMALL OUTLINE			ATTENUATOR		PURE TIN	R-PDSO-G5	1.9 ohm	1		Not Qualified				1.25 us						SILICON
BAP142LX,315	NXP Semiconductors	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.26 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	CHIP CARRIER	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	Tin (Sn)	R-PBCC-N2	1.3 ohm	1		Not Qualified	.13 W	.25 pF		.11 us		50 V	e3	30	260	SILICON	100 MHz
934061239315	NXP Semiconductors	PIN DIODE
934056560115	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	S BAND	.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE			ATTENUATOR; SWITCHING		TIN	R-PDSO-F2	1.3 ohm	1		Not Qualified	.715 W			.5 us			e3			SILICON
934056620115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE		.25 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE		150 Cel	ATTENUATOR	-65 Cel	TIN	R-PDSO-G2	7 ohm	1		Not Qualified	.5 W			1.25 us		70 V	e3			SILICON
934055687215	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SERIES CONNECTED, CENTER TAP, 2 ELEMENTS		.6 pF	POSITIVE-INTRINSIC-NEGATIVE	2		SMALL OUTLINE		150 Cel		-65 Cel	TIN	R-PDSO-G3	5 ohm	1		Not Qualified	.25 W			1.05 us	TO-236AB		e3			SILICON
934055889315	NXP Semiconductors	PIN DIODE
BAP70-03,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE		.25 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR	-65 Cel	TIN	R-PDSO-G2	1.9 ohm	1		Not Qualified	.5 W	.57 pF	HIGH VOLTAGE	1.25 us		50 V	e3	30	260	SILICON	100 MHz
934061242315	NXP Semiconductors	PIN DIODE
BAP1321-03,115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1	0 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING	-65 Cel	TIN	R-PDSO-G2	1.3 ohm	1		Not Qualified	.5 W	.4 pF		.5 us		60 V	e3	30	260	SILICON	100 MHz
934056536115	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE		.55 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE					Tin (Sn)	R-PDSO-F2	5 ohm	1		Not Qualified	.715 W			1.05 us			e3	30	260	SILICON
BAP27-01	NXP Semiconductors	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	.5 mA	SINGLE	S BAND	.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1	20 V	SMALL OUTLINE	PIN Diodes	150 Cel	ATTENUATOR; SWITCHING			R-PDSO-F2	.95 ohm			Not Qualified	.315 W	.27 pF		.17 us		50 V				SILICON	100 MHz
934056547115	NXP Semiconductors	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE		.9 pF	POSITIVE-INTRINSIC-NEGATIVE	1		SMALL OUTLINE			ATTENUATOR; SWITCHING		TIN	R-PDSO-G2	.9 ohm	1		Not Qualified	.5 W			.17 us		30 V	e3			SILICON

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.