ROHM PIN Diodes 6

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Diode Capacitance	Technology	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Operating Temperature	Application	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Moisture Sensitivity Level (MSL)	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency
RN242CST2R	ROHM	PIN DIODE				YES			3 mA	SINGLE		.35 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V		PIN Diodes	150 Cel		MATTE TIN		3 ohm	1			.35 pF		30 V	e3		225	SILICON	100 MHz
RN242CST2RA	ROHM	PIN DIODE				YES			3 mA				POSITIVE-INTRINSIC-NEGATIVE		1 V		PIN Diodes	150 Cel				3 ohm				.35 pF		30 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
RN731VTE-17	ROHM	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.4 pF	POSITIVE-INTRINSIC-NEGATIVE	1	35 V	SMALL OUTLINE	PIN Diodes	125 Cel	ATTENUATOR	TIN SILVER COPPER	R-PDSO-F2	7 ohm		Not Qualified	.1 W	.4 pF	HIGH RELIABILITY	50 V	e1			SILICON	100 MHz
RN771VTE-17	ROHM	PIN DIODE				YES			10 mA				POSITIVE-INTRINSIC-NEGATIVE		35 V		PIN Diodes	150 Cel		TIN SILVER COPPER		7 ohm	1			.9 pF		50 V	e1			SILICON	100 MHz
RN141CMT2R	ROHM	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	3 mA	SINGLE	VERY HIGH FREQUENCY	.8 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V	SMALL OUTLINE		150 Cel	SWITCHING	TIN	R-PDSO-F2	2 ohm					HIGH RELIABILITY	50 V	e3			SILICON	100 MHz
RN142SMT2R	ROHM	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY	.45 pF	POSITIVE-INTRINSIC-NEGATIVE	1	1 V	SMALL OUTLINE		150 Cel	SWITCHING	TIN	R-PDSO-F2	2 ohm					HIGH RELIABILITY	60 V	e3			SILICON	100 MHz

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.