Toshiba PIN Diodes 96

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Diode Resistive Test Current	Config	Frequency Band	Maximum Forward Voltage (VF)	Maximum Diode Capacitance	Technology	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Application	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Maximum Diode Forward Resistance	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Nominal Minority Carrier Lifetime	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Diode Resistive Test Frequency
ISS312	Toshiba	PIN DIODE		THROUGH-HOLE		NO	RECTANGULAR	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY			POSITIVE-INTRINSIC-NEGATIVE		1		IN-LINE				SWITCHING		TIN LEAD		.9 ohm	Not Qualified					30 V	e0			SILICON
1SV307(TPH3,F)	Toshiba	PIN DIODE				YES			10 mA								1 V		PIN Diodes		125 Cel					1.5 ohm			.3 pF			30 V					1 MHz
JDP2S08SC(TPL3)	Toshiba	PIN DIODE				YES			10 mA								1 V		PIN Diodes		150 Cel					1.5 ohm			.21 pF			30 V					100 MHz
ISV128	Toshiba	PIN DIODE		THROUGH-HOLE		NO	RECTANGULAR	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY			POSITIVE-INTRINSIC-NEGATIVE		1		IN-LINE				ATTENUATOR; SWITCHING		TIN LEAD			Not Qualified					50 V	e0			SILICON
ISS371	Toshiba	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY			POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE				SWITCHING		TIN LEAD	R-PDSO-G2	9 ohm	Not Qualified					30 V	e0			SILICON
JDP2S05SC(TPL3)	Toshiba	PIN DIODE				YES			1 mA								1 V		PIN Diodes		150 Cel					2.2 ohm			.24 pF			20 V					100 MHz
JDP3C13U(TE85L)	Toshiba	PIN DIODE		THROUGH-HOLE		NO	RECTANGULAR	PLASTIC/EPOXY	10 mA	COMMON CATHODE, 2 ELEMENTS			.4 pF	POSITIVE-INTRINSIC-NEGATIVE		2	1 V	IN-LINE	PIN Diodes		150 Cel					2.8 ohm			.24 pF			30 V				SILICON	100 MHz
1SV308TH3,FT	Toshiba	PIN DIODE				YES			10 mA								1 V		PIN Diodes							1.5 ohm			.3 pF			30 V					100 MHz
1SV308(TH3,F,T)	Toshiba	PIN DIODE				YES			10 mA								1 V		PIN Diodes							1.5 ohm			.3 pF			30 V					100 MHz
JDP4P02AT	Toshiba	PIN DIODE	DUAL	FLAT	4	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	1 V	SMALL OUTLINE	PIN Diodes		150 Cel	SWITCHING		TIN LEAD	R-PDSO-F4	1.5 ohm	Not Qualified		.3 pF			30 V	e0			SILICON	100 MHz
1SV128TE85R	Toshiba	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY			POSITIVE-INTRINSIC-NEGATIVE		1	50 V	SMALL OUTLINE			125 Cel	ATTENUATOR			R-PDSO-G3		Not Qualified				.4 us	50 V				SILICON
JDP2S12CR(TE85L,QM	Toshiba	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1	40 V	SMALL OUTLINE			175 Cel	SWITCHING			R-PDSO-F2	.7 ohm		1 W	1 pF	PD-CASE		180 V				SILICON	100 MHz
JDP2501E	Toshiba	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	ULTRA HIGH FREQUENCY		.8 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			125 Cel	ATTENUATOR			R-PDSO-F2	1 ohm	Not Qualified							NOT SPECIFIED	NOT SPECIFIED	SILICON
JDP2S02ACT(TPL3)	Toshiba	PIN DIODE				YES			10 mA								1 V		PIN Diodes		150 Cel					1.5 ohm			.3 pF			30 V					100 MHz
JDP4P02AT(TE85L)	Toshiba	PIN DIODE				YES			10 mA								1 V		PIN Diodes		150 Cel					1.5 ohm			.3 pF			30 V					100 MHz
JDP4L08CTC	Toshiba	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED	10 mA	SEPARATE, 2 ELEMENTS	ULTRA HIGH FREQUENCY		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		2	1 V	CHIP CARRIER	PIN Diodes		150 Cel	SWITCHING			R-XBCC-N4	1.5 ohm	Not Qualified		.21 pF			30 V				SILICON	100 MHz
JDP2S02T	Toshiba	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		1	1 V	SMALL OUTLINE	PIN Diodes		125 Cel	ATTENUATOR		TIN LEAD	R-PDSO-F2	1.5 ohm	Not Qualified		.3 pF			30 V	e0			SILICON	100 MHz
JDP2S02S	Toshiba	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			150 Cel	ATTENUATOR		TIN LEAD	R-PDSO-F2	1.5 ohm	Not Qualified						e0			SILICON
1SV308	Toshiba	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		1	30 V	SMALL OUTLINE	PIN Diodes		125 Cel	SWITCHING			R-PDSO-F2	1.1 ohm	Not Qualified		.5 pF			30 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	1500 MHz
JDP2S01AFS	Toshiba	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		.8 pF	POSITIVE-INTRINSIC-NEGATIVE		1	1 V	SMALL OUTLINE	PIN Diodes		150 Cel	SWITCHING		TIN LEAD	R-PDSO-F2	1 ohm	Not Qualified		.65 pF			30 V	e0			SILICON	100 MHz
1SV308(TPH3)	Toshiba	PIN DIODE				YES			10 mA								1 V		PIN Diodes		125 Cel					1.1 ohm			.5 pF			30 V					1500 MHz
1SV308(TPL3)	Toshiba	PIN DIODE				YES			10 mA								1 V		PIN Diodes		125 Cel					1.5 ohm			.3 pF			30 V					100 MHz
JDP2S05SC	Toshiba	PIN DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	UNSPECIFIED		SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		.35 pF	POSITIVE-INTRINSIC-NEGATIVE		1		CHIP CARRIER			150 Cel	SWITCHING			R-XBCC-N2	2.2 ohm						20 V				SILICON
1SV312	Toshiba	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY				1 V		POSITIVE-INTRINSIC-NEGATIVE	.1 uA		50 V	SMALL OUTLINE	Other Diodes	50 V	125 Cel		-55 Cel	Tin/Lead (Sn/Pb)	R-PDSO-G4		Not Qualified						e0			SILICON
1SV307(TPH3)	Toshiba	PIN DIODE				YES			10 mA								1 V		PIN Diodes		125 Cel					1.1 ohm			.5 pF			30 V					1500 MHz
JDP4P02U	Toshiba	PIN DIODE	DUAL	GULL WING	4	YES	RECTANGULAR	PLASTIC/EPOXY		SEPARATE, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		.5 pF	POSITIVE-INTRINSIC-NEGATIVE		2	1 V	SMALL OUTLINE	PIN Diodes		125 Cel	ATTENUATOR		TIN LEAD	R-PDSO-G4		Not Qualified		.3 pF			30 V	e0			SILICON
JDP2S12CR	Toshiba	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	ULTRA HIGH FREQUENCY		1.3 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			175 Cel	SWITCHING			R-PDSO-F2	.7 ohm	Not Qualified					180 V				SILICON
JDP2S02AFS(TPL3)	Toshiba	PIN DIODE				YES			10 mA								1 V		PIN Diodes		150 Cel					1.5 ohm			.3 pF			30 V					100 MHz
JDP3C02AU	Toshiba	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	ULTRA HIGH FREQUENCY		.48 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel	SWITCHING			R-PDSO-G3	1.5 ohm	Not Qualified					30 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
ISS313	Toshiba	PIN DIODE		THROUGH-HOLE		NO	RECTANGULAR	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY			POSITIVE-INTRINSIC-NEGATIVE		1		IN-LINE				SWITCHING		TIN LEAD		.9 ohm	Not Qualified					30 V	e0			SILICON
JDP2S01E	Toshiba	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	ULTRA HIGH FREQUENCY		.8 pF	POSITIVE-INTRINSIC-NEGATIVE		1	1 V	SMALL OUTLINE	PIN Diodes		125 Cel	ATTENUATOR		TIN LEAD	R-PDSO-F2	1 ohm	Not Qualified		.65 pF			30 V	e0			SILICON	100 MHz
JDP3C13U(TE85L,F)	Toshiba	PIN DIODE		THROUGH-HOLE		NO	RECTANGULAR	PLASTIC/EPOXY	10 mA	COMMON CATHODE, 2 ELEMENTS			.4 pF	POSITIVE-INTRINSIC-NEGATIVE		2	1 V	IN-LINE	PIN Diodes		150 Cel					2.8 ohm			.24 pF			30 V				SILICON	100 MHz
1SV308(TPL3,F)	Toshiba	PIN DIODE				YES			10 mA								1 V		PIN Diodes		125 Cel					1.5 ohm			.3 pF			30 V					100 MHz
JDP2S02AFS(TL3FMC)	Toshiba	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			150 Cel	SWITCHING			R-PDSO-F2	1.5 ohm						30 V				SILICON
JDP3C04TU(TE85L)	Toshiba	PIN DIODE				YES				COMMON CATHODE, 2 ELEMENTS						2	1 V		PIN Diodes		150 Cel								.3 pF			50 V
JDP3C13U	Toshiba	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		COMMON CATHODE, 2 ELEMENTS	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		.44 pF	POSITIVE-INTRINSIC-NEGATIVE		2		SMALL OUTLINE			150 Cel	SWITCHING			R-PDSO-G3	2.8 ohm										SILICON
1SV128TE85R2	Toshiba	PIN DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY			POSITIVE-INTRINSIC-NEGATIVE		1	50 V	SMALL OUTLINE			125 Cel	ATTENUATOR			R-PDSO-G3		Not Qualified				.4 us	50 V				SILICON
JDP2S01T	Toshiba	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA					POSITIVE-INTRINSIC-NEGATIVE			1 V	SMALL OUTLINE	PIN Diodes		125 Cel			TIN LEAD	R-PDSO-F2	1 ohm	Not Qualified		.65 pF			30 V	e0			SILICON	100 MHz
JDP3C02AU(TE85L,F)	Toshiba	PIN DIODE				YES			10 mA	COMMON CATHODE, 2 ELEMENTS						2	1 V		PIN Diodes		150 Cel					1.5 ohm			.28 pF			30 V					100 MHz
JDP2S04E(TPL3)	Toshiba	PIN DIODE				YES											50 V		PIN Diodes		125 Cel								.25 pF			50 V
ISS314	Toshiba	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY			POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE				SWITCHING		TIN LEAD	R-PDSO-G2	.9 ohm	Not Qualified					30 V	e0			SILICON
JDP2S01E(TPH3)	Toshiba	PIN DIODE
JDP2S02AFS	Toshiba	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	10 mA	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1	1 V	SMALL OUTLINE	PIN Diodes		150 Cel	SWITCHING			R-PDSO-F2	1.5 ohm	Not Qualified		.3 pF			30 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	100 MHz
JDP2S02AFS(TL3HIKI	Toshiba	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			150 Cel	SWITCHING			R-PDSO-F2	1.5 ohm						30 V				SILICON
JDP2S05FS	Toshiba	PIN DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	1 mA	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		.42 pF	POSITIVE-INTRINSIC-NEGATIVE		1	1 V	SMALL OUTLINE	PIN Diodes		150 Cel	SWITCHING		TIN LEAD	R-PDSO-F2	2.2 ohm	Not Qualified		.32 pF			20 V	e0			SILICON	100 MHz
JDP2S10U	Toshiba	PIN DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY		SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1 pF	POSITIVE-INTRINSIC-NEGATIVE		1		SMALL OUTLINE			125 Cel	ATTENUATOR			R-PDSO-G2	5 ohm	Not Qualified									SILICON
1SV308,L3F(B	Toshiba	PIN DIODE																																NOT SPECIFIED	NOT SPECIFIED
JDP4P08CTC	Toshiba	PIN DIODE	BOTTOM	NO LEAD	4	YES	RECTANGULAR	UNSPECIFIED	10 mA	SEPARATE, 2 ELEMENTS	ULTRA HIGH FREQUENCY		.4 pF	POSITIVE-INTRINSIC-NEGATIVE		2	1 V	CHIP CARRIER	PIN Diodes		150 Cel	SWITCHING			R-XBCC-N4	1.5 ohm	Not Qualified		.21 pF			30 V				SILICON	100 MHz

PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.