Toshiba - JDP3C13U(TE85L,F)

PIN DIODE; Surface Mount: YES; Config: COMMON CATHODE, 2 ELEMENTS; Reverse Test Voltage: 5 V; Nominal Minority Carrier Lifetime: .075 us; Diode Resistive Test Frequency: 100 MHz;

UM6601B by Microchip Technology is a PIN diode with single configuration for ultra high frequency applications. It features a max diode capacitance of 0.4 pF, reverse test voltage of 100 V, and max power dissipation of 2.5 W. Ideal for attenuator and switching purposes, it operates b/w -65°C to 175°C temperature range.

PIN DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 4; Surface Mount: YES; Package Shape: SQUARE;

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE; Moisture Sensitivity Level (MSL): 1; Terminal Finish: Tin/Bismuth (Sn/Bi); Technology: POSITIVE-INTRINSIC-NEGATIVE; Diode Element Material: SILICON; JESD-609 Code: e6;

PIN DIODE; Surface Mount: YES; Nominal Minority Carrier Lifetime: 1.55 us; Maximum Diode Forward Resistance: 20 ohm; Reverse Test Voltage: 0 V; Nominal Diode Capacitance: .17 pF;

Skyworks Solutions' DSM8100-000 is a PIN diode with 0.025 pF capacitance, 3.5 ohm forward resistance, and 60 V breakdown voltage. Ideal for attenuator and switching applications, it features a ceramic-metal-sealed co-fired package in a microwave style for high power dissipation of 0.25 W.

PIN DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

MPN3404RL1 by Onsemi is a PIN diode with a max power dissipation of 0.4W and very high frequency band for switching applications. It has a diode capacitance of 2pF, forward resistance of 0.85 ohm, and breakdown voltage of 20V, making it suitable for high-frequency switching circuits. The diode element material is silicon with a positive-intrinsic-negative technology in a cylindrical package style.

PIN DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

PIN DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

Infineon's BAR61E6327HTSA1 is a PIN diode with 0.5 pF capacitance, suitable for high frequency applications like attenuators and switching. It operates at up to 150°C, has a power dissipation of 0.25 W, and features positive-intrinsic-negative technology.

SMP1322-005LF by Skyworks Solutions is a PIN diode with 2 elements, suitable for high-frequency to S band applications. It features a max diode capacitance of 1 pF and forward resistance of 1.5 ohm. With a small outline package style, it operates b/w -65°C to 150°C, making it ideal for switching applications.

MMBV3700LT1G by Onsemi is a PIN diode with 1pF capacitance, 20V reverse test voltage, and 1 ohm forward resistance. It is used for very high-frequency switching applications due to its positive-intrinsic-negative technology and small outline package style. Operating at up to 125°C, it offers efficient performance in various electronic systems.

PIN DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

PIN DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;