NXP Semiconductors - BAP51-06W,115

BAP51-06W,115 by NXP Semiconductors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	BAP51-06W,115
Description	PIN DIODE; Surface Mount: YES; Minimum Breakdown Voltage: 50 V; Diode Resistive Test Current: .5 mA; Reverse Test Voltage: 0 V; Peak Reflow Temperature (C): 260;
Datasheet	BAP51-06W,115 Datasheet
In Stock	3,849

BAP51-06W,115 Technical Details

NAME	DESCRIPTION
Diode Resistive Test Frequency:	100 MHz
Nominal Minority Carrier Lifetime:	.55 us
Reverse Test Voltage:	0 V
Maximum Time At Peak Reflow Temperature (s):	30
Config:	COMMON ANODE, 2 ELEMENTS
Diode Type:	PIN DIODE
Diode Resistive Test Current:	.5 mA
Sub-Category:	PIN Diodes
Surface Mount:	YES
Terminal Finish:	TIN
JESD-609 Code:	e3
Nominal Diode Capacitance:	.4 pF
Minimum Breakdown Voltage:	50 V
No. of Elements:	2
Maximum Operating Temperature:	150 Cel
Maximum Diode Forward Resistance:	9 ohm
Peak Reflow Temperature (C):	260
Moisture Sensitivity Level (MSL):	1

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,849	$0.097	$373.353

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