6 Transient Suppression Devices 764

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

PESD5V0V4UK,132

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

25 W

6.8 V

AVALANCHE

4

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

S-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

10 V

6.47 V

30

260

SILICON

7.14 V

PESD5V0L5UYT/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

25 W

6.8 V

AVALANCHE

.025 uA

5

5 V

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

-65 Cel

R-PDSO-G6

UNIDIRECTIONAL

LOW CAPACITANCE

12 V

6.4 V

SILICON

7.2 V

PESD9V0V4UK

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

28 W

AVALANCHE

4

CHIP CARRIER

9 V

150 Cel

PURE TIN

S-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

11.4 V

SILICON

12.7 V

BZA418A,165

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

19.6 W

AVALANCHE

4

SMALL OUTLINE

Transient Suppressors

18 V

TIN

R-PDSO-G6

1

UNIDIRECTIONAL

Not Qualified

.72 W

27 V

e3

30

260

SILICON

PUSB2X4D,125

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

5 V

85 Cel

-40 Cel

R-PDSO-G6

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

6 V

SILICON

9 V

IEC-60134; IEC-61000-4-2, 4-5

PESD5V0L5UF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

25 W

6.8 V

AVALANCHE

.025 uA

5

5 V

BOTTOM

Transient Suppressors

5 V

150 Cel

-65 Cel

Tin (Sn)

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

MO-252

12 V

6.4 V

e3

30

260

SILICON

7.2 V

AEC-Q101

PESD5V0S4UD

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

200 W

6.8 V

AVALANCHE

4

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

Tin (Sn)

R-PDSO-G6

1

UNIDIRECTIONAL

Not Qualified

LOW LEAKAGE CURRENT

6.4 V

e3

30

260

SILICON

7.2 V

BZA456A,135

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

24 W

AVALANCHE

2 uA

4

SMALL OUTLINE

Transient Suppressors

5.6 V

150 Cel

-65 Cel

TIN

R-PDSO-G6

1

UNIDIRECTIONAL

Not Qualified

.72 W

240 pF

8 V

e3

30

260

SILICON

IP4286CZ6-TTD

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

7.5 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

R-PDSO-G6

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

9 V

PESD5V0F1BRSFYL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

28 W

AVALANCHE

1

SMALL OUTLINE

5 V

150 Cel

-55 Cel

R-PDSO-N6

BIDIRECTIONAL

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

10 V

IEC-60134; IEC-61000-4-2, 4-5

IP4221CZ6-XS

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

SINGLE

ZENER

1

CHIP CARRIER

85 Cel

-40 Cel

S-PBCC-N6

1

UNIDIRECTIONAL

6 V

SILICON

9 V

IEC-60134

IP4221CZ6-S

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.5 V

ZENER

1

CHIP CARRIER

Transient Suppressors

Tin (Sn)

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

ULTRA LOW CAPACITANCE

6 V

e3

30

260

SILICON

9 V

IP4285CZ6-TY

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

5 V

85 Cel

-40 Cel

TIN

R-PDSO-G6

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

6 V

e3

SILICON

9 V

IEC-60134; IEC-61000-4-2, 4-5

BZA456A/T3

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

24 W

AVALANCHE

2 uA

4

SMALL OUTLINE

5.88 V

150 Cel

-65 Cel

TIN

R-PDSO-G6

UNIDIRECTIONAL

Not Qualified

.72 W

240 pF

8 V

e3

SILICON

PESD24VS4UD

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

200 W

27 V

AVALANCHE

4

SMALL OUTLINE

Transient Suppressors

24 V

150 Cel

Tin (Sn)

R-PDSO-G6

1

UNIDIRECTIONAL

Not Qualified

LOW LEAKAGE CURRENT

25.5 V

e3

30

260

SILICON

29 V

PESD24VS5UD

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

200 W

27 V

AVALANCHE

5

SMALL OUTLINE

Transient Suppressors

24 V

150 Cel

Tin (Sn)

R-PDSO-G6

1

UNIDIRECTIONAL

Not Qualified

LOW LEAKAGE CURRENT

52 V

25.5 V

e3

30

260

SILICON

29 V

PESD3V3V4UK

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

25 W

AVALANCHE

4

CHIP CARRIER

3.3 V

150 Cel

S-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

5.3 V

SILICON

5.9 V

PESD5V0F5UV,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

AVALANCHE

5

SMALL OUTLINE

5 V

150 Cel

-55 Cel

R-PDSO-F6

UNIDIRECTIONAL

LOW CAPACITANCE

7.5 V

SILICON

10 V

AEC-Q101; IEC-60134

BZA420A

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

19.6 W

AVALANCHE

.1 uA

4

SMALL OUTLINE

Transient Suppressors

21 V

150 Cel

-65 Cel

Tin (Sn)

R-PDSO-G6

1

UNIDIRECTIONAL

Not Qualified

.72 W

48 pF

28 V

e3

30

260

SILICON

PESD5V0F5UV,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

8.8 V

AVALANCHE

5

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

-55 Cel

TIN

R-PDSO-F6

1

UNIDIRECTIONAL

LOW CAPACITANCE

15 V

7.5 V

e3

30

260

SILICON

10 V

AEC-Q101; IEC-60134

PESD3V3V4UF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

16 W

5.6 V

AVALANCHE

4

CHIP CARRIER

Transient Suppressors

3.3 V

150 Cel

Tin (Sn)

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

MO-252

11 V

5.3 V

e3

30

260

SILICON

5.9 V

PESD5V0U4BF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

6.5 V

AVALANCHE

4

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

Tin (Sn)

R-PBCC-N6

1

BIDIRECTIONAL

Not Qualified

MO-252

5.5 V

e3

30

260

SILICON

9.5 V

PESD5V0L4UF-T1

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

30 W

6.8 V

AVALANCHE

.025 uA

4

5 V

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

-65 Cel

R-PBCC-N6

UNIDIRECTIONAL

LOW CAPACITANCE

MO-252

13 V

6.46 V

SILICON

7.14 V

AEC-Q101

PESD9V0V4UK,132

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

28 W

12 V

AVALANCHE

4

CHIP CARRIER

Transient Suppressors

9 V

150 Cel

S-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

19 V

11.4 V

30

260

SILICON

12.7 V

PESD3V3S4UF,132

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

110 W

AVALANCHE

4

CHIP CARRIER

3.3 V

R-PBCC-N6

UNIDIRECTIONAL

5.32 V

SILICON

5.88 V

PESD3V3L4UF-T1

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

30 W

5.6 V

AVALANCHE

.3 uA

4

3.3 V

CHIP CARRIER

Transient Suppressors

3.3 V

150 Cel

-65 Cel

R-PBCC-N6

UNIDIRECTIONAL

LOW CAPACITANCE

MO-252

12 V

5.32 V

SILICON

5.88 V

AEC-Q101

BZA462A,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

24 W

AVALANCHE

.7 uA

4

SMALL OUTLINE

Transient Suppressors

6.2 V

150 Cel

-65 Cel

TIN

R-PDSO-G6

1

UNIDIRECTIONAL

Not Qualified

.72 W

200 pF

9 V

e3

30

260

SILICON

PESD5V0F5UF,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

8.8 V

AVALANCHE

5

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

-55 Cel

TIN

R-PBCC-N6

1

UNIDIRECTIONAL

LOW CAPACITANCE, IEC-61643-321

15 V

7.5 V

e3

30

260

SILICON

10 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PESD5V0V4UK

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

25 W

AVALANCHE

4

CHIP CARRIER

5 V

150 Cel

PURE TIN

S-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

6.47 V

SILICON

7.14 V

PESD3V3V4UK,132

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

25 W

5.6 V

AVALANCHE

4

CHIP CARRIER

Transient Suppressors

3.3 V

150 Cel

S-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

9.5 V

5.3 V

30

260

SILICON

5.9 V

IP4286CZ6-TTY

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

AVALANCHE

2

SMALL OUTLINE

TIN

R-PDSO-G6

1

UNIDIRECTIONAL

Not Qualified

ULTRA LOW CAPACITANCE

6 V

e3

SILICON

9 V

PUSB2X4D

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

5 V

85 Cel

-40 Cel

R-PDSO-G6

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

6 V

SILICON

9 V

IEC-60134; IEC-61000-4-2, 4-5

PESD5V0L5UVT/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

25 W

6.8 V

AVALANCHE

.025 uA

5

5 V

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

-65 Cel

R-PDSO-F6

UNIDIRECTIONAL

LOW CAPACITANCE

12 V

6.4 V

SILICON

7.2 V

PRTR5V0U2D

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ZENER

1

SMALL OUTLINE

5.5 V

TIN

R-PDSO-G6

1

UNIDIRECTIONAL

Not Qualified

6 V

e3

SILICON

9 V

IP4286CZ6-TBF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

AVALANCHE

2

CHIP CARRIER

150 Cel

TIN

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

ULTRA LOW CAPACITANCE

MO-252

6 V

e3

SILICON

9 V

PESD3V3S4UD

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

200 W

5.6 V

AVALANCHE

4

SMALL OUTLINE

Transient Suppressors

3.3 V

150 Cel

Tin (Sn)

R-PDSO-G6

1

UNIDIRECTIONAL

Not Qualified

LOW LEAKAGE CURRENT

5.3 V

e3

30

260

SILICON

5.9 V

PESD3V3L5UF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

25 W

5.6 V

AVALANCHE

.3 uA

5

3.3 V

BOTTOM

Transient Suppressors

3.3 V

150 Cel

-65 Cel

Tin (Sn)

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

MO-252

12 V

5.3 V

e3

30

260

SILICON

5.9 V

AEC-Q101

IP4282CZ6

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

PURE TIN

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

MO-252

6 V

SILICON

9 V

PESD3V3L5UK

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

28 W

AVALANCHE

5

CHIP CARRIER

3.3 V

150 Cel

PURE TIN

S-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

5.3 V

SILICON

5.9 V

PRTR5V0U4D,165

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ZENER

1

SMALL OUTLINE

3 V

150 Cel

-55 Cel

R-PDSO-G6

UNIDIRECTIONAL

6 V

SILICON

9 V

AEC-Q101; IEC-60134

PESD3V3L4UF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

30 W

5.6 V

AVALANCHE

.3 uA

4

3.3 V

CHIP CARRIER

Transient Suppressors

3.3 V

150 Cel

-65 Cel

Tin (Sn)

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

MO-252

12 V

5.32 V

e3

30

260

SILICON

5.88 V

AEC-Q101

PESD12VS4UD

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

200 W

14.5 V

AVALANCHE

4

SMALL OUTLINE

Transient Suppressors

12 V

150 Cel

Tin (Sn)

R-PDSO-G6

1

UNIDIRECTIONAL

Not Qualified

LOW LEAKAGE CURRENT

12.5 V

e3

30

260

SILICON

16 V

PESD5V0L4UF-T4

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

30 W

6.8 V

AVALANCHE

.025 uA

4

5 V

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

-65 Cel

R-PBCC-N6

UNIDIRECTIONAL

LOW CAPACITANCE

MO-252

13 V

6.46 V

SILICON

7.14 V

AEC-Q101

PESD3V3S4UF,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

110 W

5.6 V

AVALANCHE

4

CHIP CARRIER

Transient Suppressors

3.3 V

150 Cel

TIN

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

11 V

5.32 V

e3

30

260

SILICON

5.88 V

PESD3V3S5UD

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

200 W

5.6 V

AVALANCHE

5

SMALL OUTLINE

Transient Suppressors

3.3 V

150 Cel

Tin (Sn)

R-PDSO-G6

1

UNIDIRECTIONAL

Not Qualified

LOW LEAKAGE CURRENT

12 V

5.3 V

e3

30

260

SILICON

5.9 V

PESD5V0F5UF/T1

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

AVALANCHE

5

CHIP CARRIER

5 V

150 Cel

-55 Cel

R-PBCC-N6

UNIDIRECTIONAL

LOW CAPACITANCE, IEC-61643-321

7.5 V

SILICON

10 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PESD3V3V4UF,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

16 W

5.6 V

AVALANCHE

4

CHIP CARRIER

Transient Suppressors

3.3 V

150 Cel

TIN

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

MO-252

11 V

5.3 V

e3

30

260

SILICON

5.9 V

TVS3V3L4U

Infineon Technologies

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

1044 W

AVALANCHE

4

SMALL OUTLINE

3.3 V

125 Cel

-55 Cel

Tin (Sn)

R-PDSO-G6

1

UNIDIRECTIONAL

e3

NOT SPECIFIED

NOT SPECIFIED

SILICON

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.