FLAT Transient Suppression Devices 2,057

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

ESD5Z5.0T1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

174 W

1.1 V

AVALANCHE

.05 uA

1

5 V

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

Not Qualified

.2 W

11.6 V

6.2 V

e3

30

260

SILICON

IEC-61000-4-2, 4-4; UL RECOGNIZED

ESD9B5.0ST5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.8 V

AVALANCHE

.1 uA

1

5 V

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

-55 Cel

Matte Tin (Sn) - annealed

R-PDSO-F2

1

UNIDIRECTIONAL

Not Qualified

.3 W

LOW CAPACITANCE, EXCELLENT CLAMPING CAPABILITY

12.5 V

5.8 V

e3

40

260

SILICON

7.8 V

IEC-61000-4-2, 4-4

ESD5Z3.3T1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

158 W

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

3.3 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

Not Qualified

.2 W

8.4 V

5 V

e3

30

260

SILICON

IEC-61000-4-2, 4-4; UL RECOGNIZED

USBLC6-2P6

STMicroelectronics

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

5 V

125 Cel

-40 Cel

MATTE TIN

R-PDSO-F6

1

UNIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

17 V

6 V

e3

30

250

SILICON

IEC-61000-4-2

TPD2E001DRLR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

5

YES

SQUARE

PLASTIC/EPOXY

SINGLE

AVALANCHE

.001 uA

1

SMALL OUTLINE

Transient Suppressors

5.5 V

85 Cel

-40 Cel

NICKEL PALLADIUM GOLD SILVER

S-PDSO-F5

1

UNIDIRECTIONAL

Not Qualified

25 V

11 V

e4

30

260

SILICON

IEC-61000-4-2

SZESD5Z3.3T1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

158 W

AVALANCHE

1

SMALL OUTLINE

3.3 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

.5 W

EXCELLENT CLAMPING CAPABILITY

5 V

e3

30

260

SILICON

AEC-Q101; IEC-61000-4-2, 4-4

ESD9X5.0ST5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

107 W

1.1 V

AVALANCHE

1 uA

1

5 V

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

Not Qualified

.15 W

EXCELLENT CLAMPING CAPABILITY, PRSM-NOM

12.3 V

6.2 V

e3

30

260

SILICON

IEC-61000-4-2

ESD5Z6.0T1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

181 W

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

6 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

Not Qualified

.2 W

12.4 V

6.8 V

e3

30

260

SILICON

IEC-61000-4-2, 4-4; UL RECOGNIZED

ESD9B3.3ST5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6 V

AVALANCHE

.1 uA

1

5 V

SMALL OUTLINE

Transient Suppressors

3.3 V

150 Cel

-55 Cel

Matte Tin (Sn) - annealed

R-PDSO-F2

1

UNIDIRECTIONAL

Not Qualified

.3 W

LOW CAPACITANCE, EXCELLENT CLAMPING CAPABILITY

10.5 V

5 V

e3

30

260

SILICON

7 V

IEC-1000-4-2, 4-4

TPD2E001DRLRG4

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

5

YES

SQUARE

PLASTIC/EPOXY

SINGLE

AVALANCHE

.001 uA

1

SMALL OUTLINE

Transient Suppressors

5.5 V

85 Cel

-40 Cel

NICKEL PALLADIUM GOLD SILVER

S-PDSO-F5

1

UNIDIRECTIONAL

Not Qualified

25 V

11 V

e4

30

260

SILICON

IEC-61000-4-2

ESD9X3.3ST5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

102 W

1.1 V

AVALANCHE

2.5 uA

1

3.3 V

SMALL OUTLINE

Transient Suppressors

3.3 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

Not Qualified

.15 W

EXCELLENT CLAMPING CAPABILITY, PRSM-NOM

10.4 V

5 V

e3

30

260

SILICON

IEC-61000-4-2

SZESD9X5.0ST5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

107 W

1.1 V

AVALANCHE

1 uA

1

5 V

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

.15 W

EXCELLENT CLAMPING CAPABILITY, PRSM-NOM

12.3 V

6.2 V

e3

30

260

SILICON

AEC-Q101; IEC-61000-4-2

SZESD9R3.3ST5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

.001 uA

1

1 V

SMALL OUTLINE

3.3 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

.15 W

LOW CAPACITANCE

7.8 V

4.8 V

e3

30

260

SILICON

AEC-Q101; IEC-61000-4-2

SZESD9101P2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

5 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

5.3 V

e3

30

260

SILICON

8 V

AEC-Q101; IEC-61000-4-2

SZESD5Z5.0T1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

174 W

6.2 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

.5 W

EXCELLENT CLAMPING CAPABILITY

11.6 V

6.2 V

e3

30

260

SILICON

AEC-Q101; IEC-61000-4-2, 4-4

ESD9L5.0ST5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1 V

AVALANCHE

1 uA

1

5 V

SMALL OUTLINE

Transient Suppressors

5 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

Not Qualified

.15 W

LOW CAPACITANCE

9.8 V

5.4 V

e3

30

260

SILICON

IEC-61000-4-2

LESD5Z3.3T1G

Leshan Radio

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

158 W

5 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

3.3 V

125 Cel

-40 Cel

R-PDSO-F2

UNIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY

8.4 V

5 V

SILICON

IEC-61000-4-2; IEC-61000-4-4

LESD5Z5.0T1G

Leshan Radio

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

174 W

6.2 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

5 V

125 Cel

-40 Cel

R-PDSO-F2

UNIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY

11.6 V

6.2 V

SILICON

IEC-61000-4-2; IEC-61000-4-4

ESD9R3.3ST5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

.001 uA

1

1 V

SMALL OUTLINE

3.3 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

Not Qualified

.15 W

LOW CAPACITANCE

7.8 V

4.8 V

e3

30

260

SILICON

IEC-61000-4-2

ESD5B5.0ST1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

50 W

.9 V

6.8 V

AVALANCHE

1 uA

2

5 V

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

BIDIRECTIONAL

Not Qualified

.2 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

5.8 V

e3

30

260

SILICON

7.8 V

IEC-61000-4-2

SMF3.3

Littelfuse

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1200 W

3.85 V

AVALANCHE

.5 uA

1

3.3 V

SMALL OUTLINE

3.3 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY

10 V

3.4 V

e3

30

260

SILICON

4.3 V

IEC-61000-4-2, 4-4; UL RECOGNIZED

SMF33

Sangdest Microelectronics (Nanjing)

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

200 W

1.25 V

40.8 V

AVALANCHE

1 uA

1

33 V

SMALL OUTLINE

33 V

150 Cel

-55 Cel

R-PDSO-F2

UNIDIRECTIONAL

EXCELLENT CLAMPING CAPABILITY

59 V

36.7 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

44.9 V

SZESD9B5.0ST5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.8 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

-55 Cel

Matte Tin (Sn) - annealed

R-PDSO-F2

1

UNIDIRECTIONAL

.3 W

LOW CAPACITANCE, EXCELLENT CLAMPING CAPABILITY

15 V

5.8 V

e3

NOT SPECIFIED

NOT SPECIFIED

SILICON

7.8 V

SESD9L5.0ST5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1 V

AVALANCHE

1 uA

1

5 V

SMALL OUTLINE

5 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

.15 W

EXCELLENT CLAMPING CAPABILITY

9.8 V

5.4 V

e3

30

260

SILICON

AEC-Q101; IEC-61000-4-2

SZESD5Z12T1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

240 W

AVALANCHE

1

SMALL OUTLINE

12 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

.5 W

EXCELLENT CLAMPING CAPABILITY

14.1 V

e3

30

260

SILICON

AEC-Q101; IEC-61000-4-2, 4-4

ESD5Z12T1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

240 W

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

12 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

Not Qualified

.2 W

17 V

14.1 V

e3

30

260

SILICON

IEC-61000-4-2, 4-4

SMF5.0A

Vishay Intertechnology

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1000 W

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

-55 Cel

Matte Tin (Sn)

R-PDSO-F2

1

UNIDIRECTIONAL

Not Qualified

PATENTED DEVICE

DO-219AB

9.2 V

6.4 V

e3

40

260

SILICON

ESD9101P2T5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

5 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

5.3 V

e3

30

260

SILICON

8 V

IEC-61000-4-2

PESD3V3S1UB,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

330 W

5.6 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

3.3 V

150 Cel

TIN

R-PDSO-F2

1

UNIDIRECTIONAL

Not Qualified

20 V

5.2 V

e3

30

260

SILICON

6 V

RCLAMP0502A.TCT

Semtech

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

50 W

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

5 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-F6

1

UNIDIRECTIONAL

Not Qualified

LOW LEAKAGE CURRENT

18 V

6 V

e3

30

260

SILICON

ESD9L3.3ST5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1 V

AVALANCHE

1 uA

1

3.3 V

SMALL OUTLINE

Transient Suppressors

3.3 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

Not Qualified

.15 W

LOW CAPACITANCE

9 V

4.8 V

e3

30

260

SILICON

IEC-61000-4-2

PESD5Z5.0,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

180 W

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

TIN

R-PDSO-F2

1

UNIDIRECTIONAL

Not Qualified

12 V

6.2 V

e3

30

260

SILICON

PESD3V3S2UQ,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

110 W

5.6 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

3.3 V

150 Cel

TIN

R-PDSO-F3

1

UNIDIRECTIONAL

Not Qualified

.425 W

20 V

5.32 V

e3

30

260

SILICON

5.88 V

TPD4E001DRLR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

6

YES

SQUARE

PLASTIC/EPOXY

SINGLE

100 W

AVALANCHE

.001 uA

1

SMALL OUTLINE

Transient Suppressors

5.5 V

85 Cel

-40 Cel

NICKEL PALLADIUM GOLD SILVER

S-PDSO-F6

1

UNIDIRECTIONAL

Not Qualified

MO-178AB

25 V

11 V

e4

30

260

SILICON

IEC-61000-4-2, 4-5

SZESD5Z6.0T1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

181 W

6.8 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

6 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

.5 W

EXCELLENT CLAMPING CAPABILITY

12.4 V

6.8 V

e3

30

260

SILICON

AEC-Q101; IEC-61000-4-2, 4-4

S-LESD9B5.0ST5G

Leshan Radio

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

5 V

150 Cel

-55 Cel

R-PDSO-F2

BIDIRECTIONAL

.3 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

5.8 V

SILICON

7.8 V

AEC-Q101

SMF5.0AT1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1000 W

6.7 V

ZENER

1

SMALL OUTLINE

Transient Suppressors

9 V

150 Cel

-55 Cel

TIN

R-PDSO-F2

1

UNIDIRECTIONAL

Not Qualified

.385 W

EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE

9.2 V

10 V

e3

30

260

SILICON

11.1 V

SZESD9X3.3ST5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

102 W

1.1 V

AVALANCHE

2.5 uA

1

3.3 V

SMALL OUTLINE

3.3 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

.15 W

EXCELLENT CLAMPING CAPABILITY, PRSM-NOM

10.4 V

5 V

e3

30

260

SILICON

AEC-Q101; IEC-61000-4-2

TPD2E2U06DRLR

Texas Instruments

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

5

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

85 W

AVALANCHE

.01 uA

1

SMALL OUTLINE

5.5 V

125 Cel

-40 Cel

NICKEL PALLADIUM GOLD

R-PDSO-F5

1

UNIDIRECTIONAL

LOW CAPACITANCE

9.7 V

6.5 V

e4

30

260

SILICON

8.5 V

IEC-61000-4-5

PESD5V0S1UB,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

260 W

6.8 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

TIN

R-PDSO-F2

1

UNIDIRECTIONAL

Not Qualified

20 V

6.4 V

e3

30

260

SILICON

7.2 V

SZESD9B3.3ST5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6 V

AVALANCHE

.1 uA

1

3.3 V

SMALL OUTLINE

3.3 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

BIDIRECTIONAL

.3 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

11.5 V

5 V

e3

30

260

SILICON

7 V

AEC-Q101; IEC-61000-4-2, 4-4

PESD5Z3.3,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

260 W

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

3.3 V

150 Cel

TIN

R-PDSO-F2

1

UNIDIRECTIONAL

Not Qualified

8 V

5 V

e3

30

260

SILICON

PESD12VS1UB,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

180 W

15 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

12 V

150 Cel

TIN

R-PDSO-F2

1

UNIDIRECTIONAL

Not Qualified

35 V

14.7 V

e3

30

260

SILICON

15.3 V

SZESD9L3.3ST5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1 V

AVALANCHE

1 uA

1

3.3 V

SMALL OUTLINE

3.3 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

.15 W

EXCELLENT CLAMPING CAPABILITY

9 V

4.8 V

e3

30

260

SILICON

AEC-Q101; IEC-61000-4-2

SESD9L3.3ST5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1 V

AVALANCHE

1 uA

1

3.3 V

SMALL OUTLINE

3.3 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

UNIDIRECTIONAL

.15 W

EXCELLENT CLAMPING CAPABILITY

9 V

4.8 V

e3

30

260

SILICON

AEC-Q101; IEC-61000-4-2

SZESD5B5.0ST1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

50 W

.9 V

6.8 V

AVALANCHE

1 uA

1

5 V

SMALL OUTLINE

5 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

BIDIRECTIONAL

.2 W

EXCELLENT CLAMPING CAPABILITY, LOW CAPACITANCE

5.8 V

e3

30

260

SILICON

7.8 V

AEC-Q101; IEC-61000-4-2

SZSMF5.0AT1G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1000 W

ZENER

1

SMALL OUTLINE

5 V

150 Cel

-55 Cel

Tin (Sn)

R-PDSO-F2

1

UNIDIRECTIONAL

.385 W

EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE

6.4 V

e3

30

260

SILICON

7 V

AEC-Q101

ESD7951ST5G

Onsemi

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5.4 V

AVALANCHE

1 uA

1

5 V

SMALL OUTLINE

Transient Suppressors

5 V

125 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

BIDIRECTIONAL

Not Qualified

.15 W

12.9 V

5.4 V

e3

30

260

SILICON

IEC-61000-4-2

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.