GULL WING Transient Suppression Devices 2,400+

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

PRTR5V0U4AD

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.5 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

150 Cel

TIN

R-PDSO-G6

UNIDIRECTIONAL

Not Qualified

6 V

e3

SILICON

9 V

PESD24VU1UT

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

200 W

27.8 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

24 V

150 Cel

Tin (Sn)

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

TO-236AB

76 V

25.4 V

e3

30

260

SILICON

30.3 V

BZA456A,165

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

24 W

AVALANCHE

4

SMALL OUTLINE

Transient Suppressors

5.6 V

TIN

R-PDSO-G6

1

UNIDIRECTIONAL

Not Qualified

.72 W

8 V

e3

30

260

SILICON

BZA420AT/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

19.6 W

AVALANCHE

.1 uA

4

SMALL OUTLINE

Transient Suppressors

21 V

150 Cel

-65 Cel

TIN

R-PDSO-G6

UNIDIRECTIONAL

Not Qualified

.72 W

48 pF

28 V

e3

SILICON

PESD12VS2UAT,215

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

180 W

15 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

12 V

150 Cel

TIN

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

TO-236AB

14.7 V

e3

30

260

SILICON

15.3 V

BZA868A,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

5

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

24 W

AVALANCHE

4

SMALL OUTLINE

TIN

R-PDSO-G5

UNIDIRECTIONAL

Not Qualified

.335 W

6.46 V

e3

SILICON

7.14 V

PESD12VS4UD,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

200 W

14.5 V

AVALANCHE

4

SMALL OUTLINE

Transient Suppressors

12 V

150 Cel

TIN

R-PDSO-G6

1

UNIDIRECTIONAL

Not Qualified

LOW LEAKAGE CURRENT

24 V

12.5 V

e3

30

260

SILICON

16 V

MMBZ18VAL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

40 W

18 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

14.5 V

Tin (Sn)

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

.36 W

TO-236AB

25 V

17.1 V

e3

30

260

SILICON

18.9 V

PESD2IVN-U

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

150 W

AVALANCHE

2

SMALL OUTLINE

26.5 V

150 Cel

-55 Cel

R-PDSO-G3

BIDIRECTIONAL

IEC-61643-321

28 V

SILICON

32 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

IP4285CZ6-TD

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

5 V

85 Cel

-40 Cel

TIN

R-PDSO-G6

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

6 V

e3

SILICON

9 V

IEC-60134; IEC-61000-4-2, 4-5

MMBZ15VDL/DG

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

15 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

12.8 V

R-PDSO-G3

UNIDIRECTIONAL

Not Qualified

TO-236AB

21.2 V

SILICON

MMBZ18VCL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

18 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

14.5 V

Tin (Sn)

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

TO-236AB

25 V

e3

30

260

SILICON

MMBZ33VAL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

40 W

33 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

26 V

Tin (Sn)

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

.36 W

TO-236AB

46 V

31.35 V

e3

30

260

SILICON

34.65 V

PESD5V0S1UA,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

890 W

6.8 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

-55 Cel

TIN

R-PDSO-G2

1

UNIDIRECTIONAL

.5 W

19 V

6.2 V

e3

30

260

SILICON

7.3 V

AEC-Q101; IEC-60134

MMBZ20VCL,235

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

40 W

.9 V

20 V

AVALANCHE

.005 uA

2

17 V

SMALL OUTLINE

17 V

150 Cel

-55 Cel

R-PDSO-G3

UNIDIRECTIONAL

.35 W

TO-236AB

28 V

19 V

SILICON

21 V

AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321

IP4223CZ6

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ZENER

1

SMALL OUTLINE

TIN

R-PDSO-G6

UNIDIRECTIONAL

LOW CAPACITANCE

6 V

e3

SILICON

9 V

MMBZ18VCL,215

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

18 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

14.5 V

TIN

R-PDSO-G3

1

UNIDIRECTIONAL

TO-236AB

25 V

e3

30

260

SILICON

MMBZ20VCL/DG,235

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

40 W

.9 V

20 V

AVALANCHE

.005 uA

2

17 V

SMALL OUTLINE

17 V

150 Cel

-55 Cel

R-PDSO-G3

UNIDIRECTIONAL

.35 W

TO-236AB

28 V

19 V

SILICON

21 V

AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321

PESD15VS5UD

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

200 W

18 V

AVALANCHE

5

SMALL OUTLINE

Transient Suppressors

15 V

150 Cel

Tin (Sn)

R-PDSO-G6

1

UNIDIRECTIONAL

Not Qualified

LOW LEAKAGE CURRENT

33 V

17 V

e3

30

260

SILICON

19 V

BZA408B

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

20 W

AVALANCHE

4

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

-65 Cel

Tin (Sn)

R-PDSO-G6

1

BIDIRECTIONAL

Not Qualified

.26 W

LOW CAPACITANCE

e3

30

260

SILICON

PRTR5V0U4Y

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.5 V

ZENER

1

SMALL OUTLINE

Transient Suppressors

TIN

R-PDSO-G6

UNIDIRECTIONAL

Not Qualified

6 V

e3

30

260

SILICON

9 V

PESD15VL2BT,235

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

200 W

AVALANCHE

2

SMALL OUTLINE

15 V

150 Cel

R-PDSO-G3

BIDIRECTIONAL

ULTRA LOW LEAKAGE CURRENT

TO-236AB

17.1 V

SILICON

20.3 V

IEC-60134; IEC-61000-4-2, 4-5

BZA408BT/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

20 W

AVALANCHE

4

SMALL OUTLINE

5 V

150 Cel

-65 Cel

TIN

R-PDSO-G6

BIDIRECTIONAL

Not Qualified

.26 W

LOW CAPACITANCE

e3

SILICON

MMBZ18VAL/DG

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

18 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

14.5 V

R-PDSO-G3

UNIDIRECTIONAL

Not Qualified

TO-236AB

25 V

SILICON

PESD15VU1UT,235

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

200 W

AVALANCHE

2

SMALL OUTLINE

15 V

150 Cel

R-PDSO-G3

UNIDIRECTIONAL

TO-236AB

17.1 V

SILICON

20.3 V

MMBZ20VAL/DG

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

20 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

17 V

R-PDSO-G3

UNIDIRECTIONAL

Not Qualified

TO-236AB

28 V

SILICON

PESD24VS1UA

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

160 W

AVALANCHE

1

SMALL OUTLINE

24 V

Tin (Sn)

R-PDSO-G2

1

UNIDIRECTIONAL

Not Qualified

26.5 V

e3

30

260

SILICON

27.5 V

PESD24VL2BT

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

200 W

27.8 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

24 V

150 Cel

Tin (Sn)

R-PDSO-G3

1

BIDIRECTIONAL

Not Qualified

ULTRA LOW LEAKAGE CURRENT

TO-236AB

70 V

25.4 V

e3

30

260

SILICON

30.3 V

PRTR5V0U1T

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.5 V

ZENER

1

SMALL OUTLINE

Transient Suppressors

5.5 V

Tin (Sn)

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

TO-236AB

6 V

e3

30

260

SILICON

9 V

PRTR5V0U6AS,118

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

8

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

NICKEL PALLADIUM GOLD

R-PDSO-G8

1

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

MS-012AA

6 V

e4

SILICON

9 V

BZA456A

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

24 W

AVALANCHE

2 uA

4

SMALL OUTLINE

Transient Suppressors

5.88 V

150 Cel

-65 Cel

Tin (Sn)

R-PDSO-G6

1

UNIDIRECTIONAL

Not Qualified

.72 W

240 pF

8 V

e3

30

260

SILICON

MMBZ6V8AL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

24 W

AVALANCHE

2

SMALL OUTLINE

4.5 V

150 Cel

TIN

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

.29 W

TO-236AB

6.46 V

e3

SILICON

7.14 V

PESD5V0X1BA,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

5 V

150 Cel

R-PDSO-G2

BIDIRECTIONAL

Not Qualified

6 V

SILICON

9.5 V

PESD5V0S1UA,135

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

890 W

6.8 V

AVALANCHE

1

SMALL OUTLINE

5 V

150 Cel

-55 Cel

R-PDSO-G2

UNIDIRECTIONAL

.5 W

19 V

6.2 V

SILICON

7.3 V

AEC-Q101; IEC-60134

BZA820A,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

5

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

17 W

20 V

AVALANCHE

4

SMALL OUTLINE

Transient Suppressors

TIN

R-PDSO-G5

UNIDIRECTIONAL

Not Qualified

.335 W

19 V

e3

SILICON

21 V

IP4283CZ10-TT,118

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

10

YES

SQUARE

PLASTIC/EPOXY

SINGLE

7.5 V

ZENER

1

SMALL OUTLINE

Transient Suppressors

NICKEL PALLADIUM GOLD

S-PDSO-G10

1

UNIDIRECTIONAL

LOW CAPACITANCE

8 V

6 V

e4

30

260

SILICON

9 V

MMBZ20VCL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

20 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

17 V

Tin (Sn)

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

TO-236AB

28 V

e3

30

260

SILICON

BZA856AL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

5

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

16 W

5.6 V

AVALANCHE

4

SMALL OUTLINE

Transient Suppressors

150 Cel

Tin (Sn)

R-PDSO-G5

1

UNIDIRECTIONAL

Not Qualified

.3 W

e3

30

260

SILICON

PESD5V0S5UD

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

200 W

6.8 V

AVALANCHE

5

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

Tin (Sn)

R-PDSO-G6

1

UNIDIRECTIONAL

Not Qualified

LOW LEAKAGE CURRENT

13 V

6.4 V

e3

30

260

SILICON

7.2 V

PESD12VS5UD

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

200 W

14.5 V

AVALANCHE

5

SMALL OUTLINE

Transient Suppressors

12 V

150 Cel

Tin (Sn)

R-PDSO-G6

1

UNIDIRECTIONAL

Not Qualified

LOW LEAKAGE CURRENT

24 V

12.5 V

e3

30

260

SILICON

16 V

MMBZ33VCL/DG,215

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

40 W

.9 V

33 V

AVALANCHE

.005 uA

2

26 V

SMALL OUTLINE

26 V

150 Cel

-55 Cel

R-PDSO-G3

UNIDIRECTIONAL

.35 W

TO-236AB

46 V

31.35 V

SILICON

34.65 V

AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321

PESD3V3L4UG-T1

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

5

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

30 W

5.6 V

AVALANCHE

.3 uA

4

3.3 V

SMALL OUTLINE

Transient Suppressors

3.3 V

150 Cel

-65 Cel

R-PDSO-G5

UNIDIRECTIONAL

LOW CAPACITANCE

12 V

5.32 V

SILICON

5.88 V

AEC-Q101

PESD5V0L6UAS,118

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

8

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 6 ELEMENTS

35 W

6.8 V

AVALANCHE

6

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

TIN

R-PDSO-G8

1

UNIDIRECTIONAL

Not Qualified

15 V

6.4 V

e3

30

260

SILICON

7.2 V

PESD24VS1UA,135

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

160 W

AVALANCHE

1

SMALL OUTLINE

24 V

R-PDSO-G2

UNIDIRECTIONAL

Not Qualified

26.5 V

SILICON

27.5 V

MMBZ27VCL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

27 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

22 V

Tin (Sn)

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

TO-236AB

38 V

e3

30

260

SILICON

BZA420A,135

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

19.6 W

AVALANCHE

4

SMALL OUTLINE

Transient Suppressors

20 V

TIN

R-PDSO-G6

1

UNIDIRECTIONAL

Not Qualified

.72 W

28 V

e3

30

260

SILICON

BZA418A

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

19.6 W

AVALANCHE

4

SMALL OUTLINE

Transient Suppressors

18.9 V

150 Cel

-65 Cel

Tin (Sn)

R-PDSO-G6

1

UNIDIRECTIONAL

Not Qualified

.72 W

27 V

e3

30

260

SILICON

MMBZ12VDL/DG,235

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

40 W

.9 V

12 V

AVALANCHE

.005 uA

2

8.5 V

SMALL OUTLINE

8.5 V

150 Cel

-55 Cel

R-PDSO-G3

UNIDIRECTIONAL

.35 W

TO-236AB

17 V

11.4 V

SILICON

12.6 V

AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.