GULL WING Transient Suppression Devices 2,400+

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

PESD6V0L2UU,135

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

60 W

AVALANCHE

2

SMALL OUTLINE

6 V

150 Cel

-55 Cel

R-PDSO-G3

UNIDIRECTIONAL

6.4 V

SILICON

7.2 V

AEC-Q101; IEC-60134

PESD5V0L2BT

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

350 W

7.6 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

Tin (Sn)

R-PDSO-G3

1

BIDIRECTIONAL

Not Qualified

ULTRA LOW LEAKAGE CURRENT

TO-236AB

28 V

7 V

e3

30

260

SILICON

8.2 V

PESD1CAN,235

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

200 W

AVALANCHE

2

SMALL OUTLINE

24 V

150 Cel

-65 Cel

R-PDSO-G3

BIDIRECTIONAL

TO-236AB

25.4 V

SILICON

30.3 V

IEC-60134

PESD12VS1UA,135

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

14.5 V

AVALANCHE

1

SMALL OUTLINE

12 V

150 Cel

-55 Cel

R-PDSO-G2

UNIDIRECTIONAL

.5 W

27 V

13.3 V

SILICON

15.75 V

AEC-Q101; IEC-60134

PESD3V3V4UG

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

5

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

16 W

5.6 V

AVALANCHE

4

SMALL OUTLINE

Transient Suppressors

3.3 V

150 Cel

Tin (Sn)

R-PDSO-G5

1

UNIDIRECTIONAL

Not Qualified

11 V

5.3 V

e3

30

260

SILICON

5.9 V

PESD5V0L4UGT/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

5

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

30 W

6.8 V

AVALANCHE

.025 uA

4

5 V

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

-65 Cel

R-PDSO-G5

UNIDIRECTIONAL

LOW CAPACITANCE

13 V

6.46 V

SILICON

7.14 V

AEC-Q101

BZA856AVL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

5

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

6 W

5.6 V

AVALANCHE

4

SMALL OUTLINE

Transient Suppressors

5.88 V

150 Cel

Tin (Sn)

R-PDSO-G5

1

UNIDIRECTIONAL

Not Qualified

.3 W

e3

30

260

SILICON

PESD3V3S2UAT

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

330 W

5.6 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

3.3 V

150 Cel

Tin (Sn)

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

TO-236AB

5.2 V

e3

30

260

SILICON

6 V

MMBZ15VDL/DG,215

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

40 W

.9 V

15 V

AVALANCHE

.005 uA

2

12.8 V

SMALL OUTLINE

12.8 V

150 Cel

-55 Cel

R-PDSO-G3

UNIDIRECTIONAL

.35 W

TO-236AB

21.2 V

14.3 V

SILICON

15.8 V

AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321

BZA420A,165

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

19.6 W

AVALANCHE

4

SMALL OUTLINE

Transient Suppressors

20 V

TIN

R-PDSO-G6

1

UNIDIRECTIONAL

Not Qualified

.72 W

28 V

e3

30

260

SILICON

IP4284CZ10-TT

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

10

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ZENER

1

SMALL OUTLINE

R-PDSO-G10

1

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

6 V

SILICON

9 V

PESD5V0L2UU,135

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

70 W

AVALANCHE

2

SMALL OUTLINE

5 V

150 Cel

-55 Cel

R-PDSO-G3

UNIDIRECTIONAL

5.8 V

SILICON

6.6 V

AEC-Q101; IEC-60134

BZA456AT/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

24 W

AVALANCHE

2 uA

4

SMALL OUTLINE

Transient Suppressors

5.88 V

150 Cel

-65 Cel

TIN

R-PDSO-G6

UNIDIRECTIONAL

Not Qualified

.72 W

240 pF

8 V

e3

SILICON

MMBZ18VCL/DG,215

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

40 W

.9 V

18 V

AVALANCHE

.005 uA

2

14.5 V

SMALL OUTLINE

14.5 V

150 Cel

-55 Cel

R-PDSO-G3

UNIDIRECTIONAL

.35 W

TO-236AB

25 V

17.1 V

SILICON

18.9 V

AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321

BZA462A

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

24 W

AVALANCHE

.7 uA

4

SMALL OUTLINE

Transient Suppressors

6.51 V

150 Cel

-65 Cel

Tin (Sn)

R-PDSO-G6

1

UNIDIRECTIONAL

Not Qualified

.72 W

200 pF

9 V

e3

30

260

SILICON

BZA820A

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

5

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

17 W

20 V

AVALANCHE

4

SMALL OUTLINE

Transient Suppressors

21 V

150 Cel

Tin (Sn)

R-PDSO-G5

1

UNIDIRECTIONAL

Not Qualified

.335 W

19 V

e3

30

260

SILICON

21 V

MMBZ18VCL,235

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

40 W

.9 V

18 V

AVALANCHE

.005 uA

2

14.5 V

SMALL OUTLINE

14.5 V

150 Cel

-55 Cel

R-PDSO-G3

UNIDIRECTIONAL

.35 W

TO-236AB

25 V

17.1 V

SILICON

18.9 V

AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321

PESD5V0S2UAT

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

260 W

6.8 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

Tin (Sn)

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

TO-236AB

6.4 V

e3

30

260

SILICON

7.2 V

MMBZ6V2AL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

24 W

AVALANCHE

2

SMALL OUTLINE

3 V

150 Cel

TIN

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

.29 W

TO-236AB

5.89 V

e3

SILICON

6.51 V

PRTR5V0U4D,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ZENER

1

SMALL OUTLINE

3 V

150 Cel

-55 Cel

R-PDSO-G6

UNIDIRECTIONAL

6 V

SILICON

9 V

AEC-Q101; IEC-60134

MMBZ15VDL,235

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

40 W

.9 V

15 V

AVALANCHE

.005 uA

2

12.8 V

SMALL OUTLINE

12.8 V

150 Cel

-55 Cel

R-PDSO-G3

UNIDIRECTIONAL

.35 W

TO-236AB

21.2 V

14.3 V

SILICON

15.8 V

AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321

MMBZ15VDL/DG,235

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

40 W

.9 V

15 V

AVALANCHE

.005 uA

2

12.8 V

SMALL OUTLINE

12.8 V

150 Cel

-55 Cel

R-PDSO-G3

UNIDIRECTIONAL

.35 W

TO-236AB

21.2 V

14.3 V

SILICON

15.8 V

AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321

PESD15VS2UT

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

160 W

18 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

15 V

150 Cel

Tin (Sn)

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

TO-236AB

17.6 V

e3

30

260

SILICON

18.4 V

PESD24VU1UT,235

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

200 W

AVALANCHE

2

SMALL OUTLINE

24 V

150 Cel

R-PDSO-G3

UNIDIRECTIONAL

TO-236AB

25.4 V

SILICON

30.3 V

MMBZ18VCL/DG

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

18 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

14.5 V

R-PDSO-G3

UNIDIRECTIONAL

Not Qualified

TO-236AB

25 V

SILICON

MMBZ27VCL/DG,215

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

40 W

1.1 V

27 V

AVALANCHE

.005 uA

2

22 V

SMALL OUTLINE

22 V

150 Cel

-55 Cel

R-PDSO-G3

UNIDIRECTIONAL

.35 W

TO-236AB

38 V

25.65 V

SILICON

28.35 V

AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321

MMBZ12VDL/DG

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

12 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

8.5 V

R-PDSO-G3

UNIDIRECTIONAL

Not Qualified

TO-236AB

17 V

SILICON

PESD12VS2UAT

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

180 W

15 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

12 V

150 Cel

Tin (Sn)

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

TO-236AB

14.7 V

e3

30

260

SILICON

15.3 V

MMBZ20VCL,215

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

20 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

17 V

TIN

R-PDSO-G3

1

UNIDIRECTIONAL

TO-236AB

28 V

e3

30

260

SILICON

PESD3V3L1UA,135

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

45 W

5.6 V

AVALANCHE

.3 uA

1

3.3 V

SMALL OUTLINE

3.3 V

150 Cel

-55 Cel

R-PDSO-G2

UNIDIRECTIONAL

LOW CAPACITANCE

11 V

5.3 V

SILICON

6 V

AEC-Q101; IEC-60134

PRTR5V0U8S

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

10

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

AVALANCHE

1

SMALL OUTLINE

NICKEL PALLADIUM GOLD

R-PDSO-G10

1

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

6 V

e4

30

260

SILICON

9 V

PESD3V3U1UT

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

80 W

6.4 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

3.3 V

150 Cel

Tin (Sn)

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

TO-236AB

20 V

5.8 V

e3

30

260

SILICON

6.9 V

PESD5V0L5UYT/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

25 W

6.8 V

AVALANCHE

.025 uA

5

5 V

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

-65 Cel

R-PDSO-G6

UNIDIRECTIONAL

LOW CAPACITANCE

12 V

6.4 V

SILICON

7.2 V

PESD1IVN-U

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

150 W

AVALANCHE

1

SMALL OUTLINE

26.5 V

150 Cel

-55 Cel

R-PDSO-G3

BIDIRECTIONAL

IEC-61643-321

28 V

SILICON

32 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

MMBZ27VCL/DG,235

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

40 W

1.1 V

27 V

AVALANCHE

.005 uA

2

22 V

SMALL OUTLINE

22 V

150 Cel

-55 Cel

R-PDSO-G3

UNIDIRECTIONAL

.35 W

TO-236AB

38 V

25.65 V

SILICON

28.35 V

AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321

PESD5V2S18U,118

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

20

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 18 ELEMENTS

27.5 W

AVALANCHE

18

SMALL OUTLINE

5.2 V

TIN

R-PDSO-G20

1

BIDIRECTIONAL

Not Qualified

MO-150AE

6.4 V

e3

SILICON

7.2 V

BZA418A,165

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

19.6 W

AVALANCHE

4

SMALL OUTLINE

Transient Suppressors

18 V

TIN

R-PDSO-G6

1

UNIDIRECTIONAL

Not Qualified

.72 W

27 V

e3

30

260

SILICON

MMBZ12VAL/DG

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

12 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

8.5 V

R-PDSO-G3

UNIDIRECTIONAL

Not Qualified

TO-236AB

17 V

SILICON

PUSB2X4D,125

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

5 V

85 Cel

-40 Cel

R-PDSO-G6

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

6 V

SILICON

9 V

IEC-60134; IEC-61000-4-2, 4-5

MMBZ12VAL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

40 W

12 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

8.5 V

Tin (Sn)

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

.36 W

TO-236AB

17 V

11.4 V

e3

30

260

SILICON

12.6 V

PESD5V0S4UD

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

200 W

6.8 V

AVALANCHE

4

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

Tin (Sn)

R-PDSO-G6

1

UNIDIRECTIONAL

Not Qualified

LOW LEAKAGE CURRENT

6.4 V

e3

30

260

SILICON

7.2 V

MMBZ5V6AL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

24 W

AVALANCHE

2

SMALL OUTLINE

3 V

150 Cel

TIN

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

.29 W

TO-236AB

5.32 V

e3

SILICON

5.88 V

PESD2ETH-AX

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.5 V

AVALANCHE

.1 uA

1

3 V

SMALL OUTLINE

5.5 V

125 Cel

-40 Cel

R-PDSO-G4

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

6 V

SILICON

7.5 V

AEC-Q101; IEC-60134; IEC-61000-4-2

BZA856A

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

5

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

24 W

5.6 V

AVALANCHE

4

SMALL OUTLINE

Transient Suppressors

5.88 V

150 Cel

Tin (Sn)

R-PDSO-G5

1

UNIDIRECTIONAL

Not Qualified

.335 W

5.32 V

e3

30

260

SILICON

5.88 V

PESD5V2S2UAT

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

260 W

AVALANCHE

2

SMALL OUTLINE

R-PDSO-G3

UNIDIRECTIONAL

Not Qualified

SILICON

BZA862A,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

5

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

24 W

AVALANCHE

4

SMALL OUTLINE

TIN

R-PDSO-G5

UNIDIRECTIONAL

Not Qualified

.335 W

5.89 V

e3

SILICON

6.51 V

BZA456A,135

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

24 W

AVALANCHE

2 uA

4

SMALL OUTLINE

Transient Suppressors

5.6 V

150 Cel

-65 Cel

TIN

R-PDSO-G6

1

UNIDIRECTIONAL

Not Qualified

.72 W

240 pF

8 V

e3

30

260

SILICON

PESD5V0L7BAS,118

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

8

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON BIPOLAR TERMINAL, 7 ELEMENTS

35 W

7.6 V

AVALANCHE

7

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

TIN

R-PDSO-G8

1

BIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

17 V

7.2 V

e3

30

260

SILICON

7.9 V

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.