NO LEAD Transient Suppression Devices 1,724

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

D5V0Q1B2LP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5.5 V

150 Cel

-55 Cel

MATTE TIN

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

11 V

6 V

e3

260

SILICON

8 V

IEC-61000-4-2

DESD18VS1BLP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

30 W

28.5 V

AVALANCHE

.05 uA

1

18 V

CHIP CARRIER

18 V

150 Cel

-55 Cel

MATTE TIN

R-PBCC-N2

BIDIRECTIONAL

.25 W

ULTRA LOW CAPACITANCE

23 V

25 V

e3

30

260

SILICON

32 V

IEC-61000-4-2

D5V0S1U2LP1610-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.5 V

AVALANCHE

.5 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.3 W

11.5 V

6 V

e4

30

260

SILICON

9 V

IEC-61000-4-2

D5V0F6U8LP33-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

8

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

5.5 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N8

1

UNIDIRECTIONAL

.3 W

6 V

e4

260

SILICON

IEC-61000-4-2

D3V3X4U10LP-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

18 W

AVALANCHE

4

SMALL OUTLINE

3.3 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N10

UNIDIRECTIONAL

.35 W

PD-NOM, ULTRA LOW CAPACITANCE

5.5 V

e4

260

SILICON

IEC-61000-4-2, 4-5

D5V0M1U2LP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

120 W

AVALANCHE

1

CHIP CARRIER

5.5 V

150 Cel

-65 Cel

MATTE TIN

R-PBCC-N2

UNIDIRECTIONAL

.25 W

6.2 V

e3

260

SILICON

IEC-61000-4-2

D5V0L1B2LP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

84 W

7 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

-65 Cel

MATTE TIN

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

14 V

6 V

e3

30

260

SILICON

8 V

IEC-61000-4-2

DESD5V0V1BCSP-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

20 W

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

-65 Cel

NICKEL GOLD

R-XBCC-N2

BIDIRECTIONAL

.25 W

6 V

e4

260

SILICON

10 V

DESD24VF1BLP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

40 W

AVALANCHE

.03 uA

1

24 V

CHIP CARRIER

24 V

150 Cel

-65 Cel

MATTE TIN

R-PBCC-N2

BIDIRECTIONAL

.25 W

23 V

25 V

e3

30

260

SILICON

IEC-61000-4-2

D5V0F3B6LP20-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

AVALANCHE

4

SMALL OUTLINE

26 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

S-PDSO-N6

BIDIRECTIONAL

.5 W

28 V

e4

260

SILICON

31.9 V

DESD10V0X1BD2CSP-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

40 W

15 V

AVALANCHE

1 uA

1

10 V

CHIP CARRIER

10 V

150 Cel

-65 Cel

NICKEL GOLD

R-XBCC-N2

BIDIRECTIONAL

.25 W

5 V

12 V

e4

260

SILICON

18 V

IEC-61000-4-2; MIL-STD-202

D12V0H1U2LP1610-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1000 W

AVALANCHE

1

CHIP CARRIER

12 V

150 Cel

-55 Cel

NICKEL GOLD

R-PBCC-N2

UNIDIRECTIONAL

.3 W

13 V

e4

260

SILICON

IEC-61000-4-2

D5V0L1B2DLP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

84 W

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

-65 Cel

NICKEL GOLD

R-PBCC-N2

BIDIRECTIONAL

.25 W

6 V

e4

260

SILICON

8 V

DESD5V0S1BLP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

145 W

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

-65 Cel

MATTE TIN

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

6 V

e3

30

260

SILICON

9.5 V

D3V3S1B2LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

410 W

5.15 V

AVALANCHE

.5 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

BIDIRECTIONAL

.25 W

9.5 V

3.8 V

e4

260

SILICON

6.5 V

IEC-61000-4-2,4-5; MIL-STD-202

DESD3V3Z1BCSFQ-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

25 W

7 V

AVALANCHE

1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-65 Cel

R-PBCC-N2

BIDIRECTIONAL

.25 W

11.5 V

5 V

SILICON

9 V

AEC-Q101; IATF 16949; IEC-61000-4-2

D3V3S1U2LP1610-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

3.3 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.3 W

3.8 V

e4

30

260

SILICON

IEC-61000-4-2

D1213A-01LP4-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

3.3 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.25 W

HIGH RELIABILITY

10 V

6 V

e4

30

260

SILICON

AEC-Q101

D3V3H1U2LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

350 W

AVALANCHE

1

CHIP CARRIER

3.3 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.25 W

4 V

e4

30

260

SILICON

IEC-61000-4-2

D12V0S1U2LP1608-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

15 V

AVALANCHE

1 uA

1

12 V

SMALL OUTLINE

12 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N2

UNIDIRECTIONAL

CATHODE

.3 W

380 pF

22 V

13 V

e4

260

SILICON

17 V

IEC-61000-4-2

D12V0S1U3LP20-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

3

YES

SQUARE

PLASTIC/EPOXY

SINGLE

4000 W

14 V

AVALANCHE

.2 uA

1

12 V

SMALL OUTLINE

12 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

S-PDSO-N3

UNIDIRECTIONAL

CATHODE

.5 W

27.5 V

13.3 V

e4

260

SILICON

14.7 V

IEC-61000-4-2

DESD12V0S1BL-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

1

CHIP CARRIER

12 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

BIDIRECTIONAL

.25 W

15 V

e4

260

SILICON

IEC-61000-4-2

D5V0M2B3LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

130 W

AVALANCHE

2

CHIP CARRIER

5 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N3

BIDIRECTIONAL

ANODE

.25 W

5.5 V

e4

260

SILICON

9.5 V

IEC-61000-4-2

D3V3P4U10LP26-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

3.3 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N10

UNIDIRECTIONAL

.5 W

3.8 V

e4

260

SILICON

6.5 V

DESD6V8DLP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

70 W

6.8 V

AVALANCHE

2

CHIP CARRIER

Transient Suppressors

5.25 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N3

1

UNIDIRECTIONAL

ANODE

Not Qualified

.385 W

LOW CAPACITANCE

6.4 V

e4

30

260

SILICON

7.2 V

D5V0L1B2LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

84 W

7 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

-65 Cel

MATTE TIN

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

11.5 V

6 V

e3

30

260

SILICON

8 V

D5V0S1B2LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

440 W

AVALANCHE

1

CHIP CARRIER

5.5 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

BIDIRECTIONAL

.25 W

6 V

e4

30

260

SILICON

9 V

IEC-61000-4-2

DESD5V0S1BLD-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

130 W

7.5 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

14 V

5.5 V

e4

30

260

SILICON

9.5 V

IEC-61000-4-5

MAX3205EATE

Maxim Integrated

TRANS VOLTAGE SUPPRESSOR DIODE

QUAD

NO LEAD

16

YES

SQUARE

UNSPECIFIED

SINGLE

.95 V

AVALANCHE

1

FLATPACK

Other Diodes

150 Cel

-40 Cel

TIN LEAD

S-XQFP-N16

1

UNIDIRECTIONAL

Not Qualified

1.667 W

LOW CAPACITANCE

e0

245

SILICON

MAX3204EETT

Maxim Integrated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

COMPLEX

.95 V

AVALANCHE

8

SMALL OUTLINE

Other Diodes

150 Cel

-40 Cel

TIN LEAD

S-PDSO-N6

1

UNIDIRECTIONAL

Not Qualified

1.951 W

MO-229WEEA

e0

SILICON

MAX3205EATE-T

Maxim Integrated

TRANS VOLTAGE SUPPRESSOR DIODE

QUAD

NO LEAD

16

YES

SQUARE

UNSPECIFIED

SINGLE

.95 V

AVALANCHE

1

FLATPACK

Other Diodes

150 Cel

-40 Cel

S-XQFP-N16

UNIDIRECTIONAL

Not Qualified

1.667 W

LOW CAPACITANCE

NOT SPECIFIED

NOT SPECIFIED

SILICON

MAX3203EETT

Maxim Integrated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

COMPLEX

.95 V

AVALANCHE

6

SMALL OUTLINE

Other Diodes

150 Cel

-40 Cel

TIN LEAD

S-PDSO-N6

1

UNIDIRECTIONAL

Not Qualified

1.951 W

MO-229WEEA

e0

SILICON

MAX3202EETT

Maxim Integrated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

COMPLEX

.95 V

AVALANCHE

4

SMALL OUTLINE

Other Diodes

150 Cel

-40 Cel

TIN LEAD

S-PDSO-N6

1

UNIDIRECTIONAL

Not Qualified

1.951 W

MO-229WEEA

e0

SILICON

MAX3208EATE-T

Maxim Integrated

TRANS VOLTAGE SUPPRESSOR DIODE

QUAD

NO LEAD

16

YES

SQUARE

UNSPECIFIED

SINGLE

.95 V

AVALANCHE

1

FLATPACK

Other Diodes

150 Cel

-40 Cel

S-XQFP-N16

UNIDIRECTIONAL

Not Qualified

1.667 W

LOW CAPACITANCE

NOT SPECIFIED

NOT SPECIFIED

SILICON

MAX3208EATE

Maxim Integrated

TRANS VOLTAGE SUPPRESSOR DIODE

QUAD

NO LEAD

16

YES

SQUARE

UNSPECIFIED

SINGLE

.95 V

AVALANCHE

1

FLATPACK

Other Diodes

150 Cel

-40 Cel

TIN LEAD

S-XQFP-N16

1

UNIDIRECTIONAL

Not Qualified

1.667 W

LOW CAPACITANCE

e0

245

SILICON

MAX3206EETC-T

Maxim Integrated

TRANS VOLTAGE SUPPRESSOR DIODE

QUAD

NO LEAD

12

YES

SQUARE

PLASTIC/EPOXY

COMPLEX

.95 V

AVALANCHE

12

CHIP CARRIER

Other Diodes

150 Cel

-40 Cel

TIN LEAD

S-PQCC-N12

1

UNIDIRECTIONAL

Not Qualified

1.349 W

MO-220WGGB

e0

SILICON

DF6D7M1N

Toshiba

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 3 ELEMENTS

6 V

AVALANCHE

3

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

R-PDSO-N6

UNIDIRECTIONAL

12 V

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-5

DF2B6.8ACT

Toshiba

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

6.8 V

AVALANCHE

.5 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

R-XBCC-N2

BIDIRECTIONAL

7 V

5.8 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

7.8 V

IEC-61000-4-2, 4-5

DF2B7M2SL

Toshiba

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

40 W

AVALANCHE

1

SMALL OUTLINE

5 V

150 Cel

R-PDSO-N2

BIDIRECTIONAL

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

11 V

IEC-61000-4-5

DF2S14P1CT

Toshiba

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

222 W

13.5 V

AVALANCHE

.1 uA

1

12.6 V

CHIP CARRIER

12.6 V

150 Cel

R-XBCC-N2

UNIDIRECTIONAL

37 V

12.9 V

SILICON

15.5 V

IEC-61000-4-2,4-5

DF2B7M3SC

Toshiba

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

R-XBCC-N2

BIDIRECTIONAL

6 V

SILICON

DF10G7M1N

Toshiba

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

6 V

AVALANCHE

5

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

R-PDSO-N10

UNIDIRECTIONAL

12 V

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IEC-61000-4-5

DF2S12P1CT

Toshiba

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

240 W

12 V

AVALANCHE

.1 uA

1

10 V

CHIP CARRIER

10 V

150 Cel

R-XBCC-N2

UNIDIRECTIONAL

32 V

10.5 V

SILICON

14.5 V

IEC-61000-4-2,4-5

DF2S5M4SL,L3F(T

Toshiba

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

30 W

AVALANCHE

1

SMALL OUTLINE

3.6 V

150 Cel

R-PDSO-N2

1

UNIDIRECTIONAL

3.7 V

260

SILICON

5.5 V

IEC-61000-4-5

DF2B6.8SC

Toshiba

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

R-XBCC-N2

BIDIRECTIONAL

5.8 V

SILICON

7.8 V

IEC-61000-4-5

DF2S6P2CTC,L3F(T

Toshiba

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

1900 W

AVALANCHE

1

CHIP CARRIER

5.5 V

150 Cel

R-XBCC-N2

UNIDIRECTIONAL

5.6 V

SILICON

8 V

IEC-61000-4-2, 4-5

DF2S6P1CT

Toshiba

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

160 W

6.7 V

AVALANCHE

.1 uA

1

5.5 V

CHIP CARRIER

5.5 V

150 Cel

R-XBCC-N2

UNIDIRECTIONAL

16 V

5.6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

8 V

IEC-61000-4-2,4-5

DF2S6.2ASL

Toshiba

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

37 W

6.2 V

ZENER

2.5 uA

1

5 V

SMALL OUTLINE

5 V

150 Cel

R-PDSO-N2

UNIDIRECTIONAL

15 V

5.8 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

6.6 V

IEC-61000-4-2,4-5

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.