NO LEAD Transient Suppression Devices 1,724

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

D4V5H1U2LP1610-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

4.5 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.5 W

5.5 V

e4

260

SILICON

8 V

IEC-61000-4-2

D24V0S1U3LP20-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

3

YES

SQUARE

PLASTIC/EPOXY

SINGLE

4000 W

28.1 V

AVALANCHE

.2 uA

1

24 V

SMALL OUTLINE

24 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

S-PDSO-N3

UNIDIRECTIONAL

CATHODE

.5 W

44.4 V

26.7 V

e4

260

SILICON

29.5 V

IEC-61000-4-2

D14V0H1U2LP1610-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1120 W

AVALANCHE

1

CHIP CARRIER

14 V

150 Cel

-55 Cel

NICKEL GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.3 W

15 V

e4

260

SILICON

IEC-61000-4-2

D20V0L1B2LP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

80 W

23 V

AVALANCHE

.1 uA

1

20 V

CHIP CARRIER

20 V

150 Cel

-65 Cel

MATTE TIN

R-PBCC-N2

BIDIRECTIONAL

.25 W

32 V

21 V

e3

260

SILICON

25 V

IEC-61000-4-2

L03L5V0CE3

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

30 W

AVALANCHE

2

CHIP CARRIER

5 V

105 Cel

-55 Cel

R-PBCC-N3

BIDIRECTIONAL

ANODE

5.5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

9.5 V

IEC-61000-4-2, 4-5

D26V0H1U2LP20-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

SQUARE

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

1

CHIP CARRIER

26 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

S-PBCC-N2

1

UNIDIRECTIONAL

.5 W

28 V

e4

30

260

SILICON

31.9 V

L15ESD24VE2

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

150 W

AVALANCHE

1

CHIP CARRIER

24 V

125 Cel

-55 Cel

MATTE TIN

R-PBCC-N2

UNIDIRECTIONAL

Not Qualified

26.5 V

e3

SILICON

29.5 V

DMF05LCFLP-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

70 W

AVALANCHE

5

SMALL OUTLINE

5 V

NICKEL PALLADIUM GOLD

S-PDSO-N6

1

UNIDIRECTIONAL

ANODE

Not Qualified

LOW CAPACITANCE, HIGH RELIABILITY

6 V

e4

30

260

SILICON

8 V

D4V5H1BS2LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

528 W

5.9 V

AVALANCHE

.5 uA

1

4.5 V

CHIP CARRIER

4.5 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

BIDIRECTIONAL

.25 W

7 V

4.8 V

e4

260

SILICON

7 V

IEC-61000-4-2,4-5; MIL-STD-202

DT1240-08LP3810-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

9

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

60 W

AVALANCHE

.5 uA

1

5.5 V

SMALL OUTLINE

5.5 V

85 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N9

1

UNIDIRECTIONAL

.35 W

11 V

6 V

e4

30

260

SILICON

IEC-61000-4-2, 4-5; MIL-STD-202

L03ESDL5V0CE2

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

30 W

7.5 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

15 V

5.5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

9.5 V

DESD5V0U1BLQ-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

21.6 W

7 V

AVALANCHE

.1 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

BIDIRECTIONAL

.25 W

7.2 V

5.5 V

e4

260

SILICON

9.5 V

IEC-61000-4-2,4-5

DESDALC5LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

150 W

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

5.8 V

e4

260

SILICON

11 V

D3V3L2B3LP10-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

3

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

35 W

5.15 V

AVALANCHE

.2 uA

2

3.3 V

SMALL OUTLINE

3.3 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

S-PDSO-N3

BIDIRECTIONAL

.25 W

7 V

3.8 V

e4

260

SILICON

6.5 V

IEC-61000-4-2

D5V0L1B2LPSQ-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

90 W

AVALANCHE

1

SMALL OUTLINE

24 V

150 Cel

-65 Cel

MATTE TIN

R-PDSO-N2

1

BIDIRECTIONAL

.25 W

26 V

e3

30

260

SILICON

32 V

AEC-Q101; IEC-61000-4-2

DESD0V8Z1BCSF-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

15 W

AVALANCHE

1 uA

1

.8 V

CHIP CARRIER

.8 V

150 Cel

-65 Cel

NICKEL GOLD

R-XBCC-N2

BIDIRECTIONAL

.25 W

4 V

1 V

e4

260

SILICON

IEC-61000-4-2; MIL-STD-202

D5V0P1B2LP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5.5 V

150 Cel

-65 Cel

MATTE TIN

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

6 V

e3

260

SILICON

8 V

D5V0P4B5LP08-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

4

YES

SQUARE

PLASTIC/EPOXY

SEPARATE, 4 ELEMENTS

40 W

AVALANCHE

4

SMALL OUTLINE

5.5 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

S-PDSO-N4

1

BIDIRECTIONAL

.3 W

6 V

e4

30

260

SILICON

IEC-61000-4-5

D5V0F2U3LP08-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

SINGLE

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

AVALANCHE

2

SMALL OUTLINE

5.5 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PSSO-N2

1

UNIDIRECTIONAL

ANODE

.25 W

6 V

e4

260

SILICON

IEC-61000-4-2

D5V0F1U2LP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5.5 V

150 Cel

-65 Cel

MATTE TIN

R-PBCC-N2

1

UNIDIRECTIONAL

.25 W

6 V

e3

260

SILICON

D1213A-01LPQ-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.95 V

AVALANCHE

1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.25 W

HIGH RELIABILITY

10 V

6 V

e4

30

260

SILICON

AEC-Q101; IEC-61000-4-2

D5V0H1U2LP1610-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.5 W

5.5 V

e4

260

SILICON

IEC-61000-4-2

TPD6V8LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

85 W

6.8 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.25 W

19 V

6.4 V

e4

30

260

SILICON

7.2 V

D12V0HA1U2SLP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

630 W

15 V

AVALANCHE

.1 uA

1

12 V

CHIP CARRIER

12 V

150 Cel

-55 Cel

MATTE TIN

R-PBCC-N2

UNIDIRECTIONAL

.25 W

21 V

13.5 V

e3

260

SILICON

16.5 V

IEC-61000-4-2,4-5

DESD18VF1BLP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

SQUARE

PLASTIC/EPOXY

SINGLE

20 W

AVALANCHE

1

CHIP CARRIER

18 V

150 Cel

-65 Cel

MATTE TIN

S-PBCC-N2

BIDIRECTIONAL

.25 W

19 V

e3

260

SILICON

35 V

IEC-61000-4-2

DESD3V3XA1BCSF-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

27.5 W

7 V

AVALANCHE

1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

NICKEL GOLD

R-XBCC-N2

BIDIRECTIONAL

.25 W

5 V

5 V

e4

260

SILICON

9 V

IEC-61000-4-2; MIL-STD-202

D3V3S1U2LP1610Q-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1 uA

1

3.3 V

CHIP CARRIER

3.3 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

UNIDIRECTIONAL

.3 W

11.5 V

3.8 V

e4

SILICON

AEC-Q101; IATF 16949; IEC-61000-4-2

DESD30VF1BL-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

34 V

AVALANCHE

.05 uA

1

30 V

CHIP CARRIER

30 V

150 Cel

-65 Cel

R-PBCC-N2

BIDIRECTIONAL

.25 W

13 V

31 V

SILICON

39 V

IEC-61000-4-2

D5V0H1U2LP1610Q-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1 uA

1

5 V

CHIP CARRIER

5 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

UNIDIRECTIONAL

.5 W

13 V

5.5 V

e4

SILICON

AEC-Q101; IATF 16949; IEC-61000-4-2

D12V0X1B2LPQ-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

15.3 V

AVALANCHE

1 uA

1

12 V

CHIP CARRIER

12 V

150 Cel

-55 Cel

R-PBCC-N2

BIDIRECTIONAL

.25 W

24 V

13 V

SILICON

17.6 V

AEC-Q101; IATF 16949; IEC-61000-4-2

D5V0Q1B2CSP-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

AVALANCHE

1

CHIP CARRIER

5.5 V

150 Cel

-65 Cel

NICKEL GOLD

R-XBCC-N2

BIDIRECTIONAL

.25 W

6 V

e4

260

SILICON

10 V

IEC-61000-4-2, 4-5

D12V0M1U2LP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

100 W

AVALANCHE

1

CHIP CARRIER

12 V

150 Cel

-65 Cel

MATTE TIN

R-PBCC-N2

1

UNIDIRECTIONAL

.25 W

13 V

e3

30

260

SILICON

IEC-61000-4-2, 4-5

D5V0S1U2LP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

500 W

AVALANCHE

1

CHIP CARRIER

5.5 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N2

1

UNIDIRECTIONAL

.25 W

6.2 V

e4

30

260

SILICON

7.4 V

IEC-61000-4-2

D3V3L1B2LP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

96 W

AVALANCHE

1

CHIP CARRIER

3.3 V

150 Cel

-65 Cel

MATTE TIN

R-PBCC-N2

BIDIRECTIONAL

.25 W

3.8 V

e3

260

SILICON

IEC-61000-4-2

DESD3V3S1BLP-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

35 W

AVALANCHE

1

CHIP CARRIER

3.3 V

150 Cel

-65 Cel

R-PBCC-N2

BIDIRECTIONAL

.25 W

3.8 V

SILICON

6.5 V

DESDALC14V2LP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

30 W

AVALANCHE

1

CHIP CARRIER

3 V

150 Cel

-65 Cel

MATTE TIN

R-PBCC-N2

UNIDIRECTIONAL

.25 W

14.2 V

e3

30

260

SILICON

17 V

IEC-61000-4-2

D5V0M5B6LP16-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

SQUARE

PLASTIC/EPOXY

COMMON CATHODE, 5 ELEMENTS

130 W

AVALANCHE

5

SMALL OUTLINE

5 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

S-PDSO-N6

BIDIRECTIONAL

.25 W

5.5 V

e4

260

SILICON

9.5 V

DESD2V5Z1BCSF-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

25 W

7 V

AVALANCHE

1 uA

1

2.5 V

CHIP CARRIER

2.5 V

150 Cel

-65 Cel

NICKEL GOLD

R-XBCC-N2

BIDIRECTIONAL

.25 W

4.5 V

5 V

e4

260

SILICON

9 V

IEC-61000-4-2, 4-5; MIL-STD-202

D3V3M1U2LP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

120 W

AVALANCHE

1

CHIP CARRIER

3.3 V

150 Cel

-65 Cel

MATTE TIN

R-PBCC-N2

1

UNIDIRECTIONAL

.25 W

4.5 V

e3

30

260

SILICON

IEC-61000-4-2; IEC-61000-4-5

D5V0M2B3LP10-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

3

YES

SQUARE

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

130 W

AVALANCHE

2

SMALL OUTLINE

5 V

150 Cel

-65 Cel

NICKEL PALLADIUM GOLD

S-PDSO-N3

1

BIDIRECTIONAL

ANODE

.25 W

5.5 V

e4

260

SILICON

9.5 V

IEC-61000-4-2

DESD4V0X1BD2CSP-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

40 W

7.5 V

AVALANCHE

1 uA

1

4 V

CHIP CARRIER

4 V

150 Cel

-65 Cel

NICKEL GOLD

R-XBCC-N2

BIDIRECTIONAL

.25 W

5 V

6 V

e4

260

SILICON

9 V

IEC-61000-4-2; MIL-STD-202

DESD6V8DLP-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

70 W

6.8 V

AVALANCHE

2

CHIP CARRIER

Transient Suppressors

5.25 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PBCC-N3

1

UNIDIRECTIONAL

ANODE

Not Qualified

.385 W

LOW CAPACITANCE

6.4 V

e4

30

260

SILICON

7.2 V

D3V3Q1B2DLP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

30 W

AVALANCHE

1

CHIP CARRIER

3.3 V

150 Cel

-65 Cel

NICKEL GOLD

R-PBCC-N2

BIDIRECTIONAL

.25 W

3.8 V

e4

260

SILICON

6.5 V

IEC-61000-4-2

D5V0L1B2LPS-7B

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

90 W

AVALANCHE

1

SMALL OUTLINE

24 V

150 Cel

-65 Cel

MATTE TIN

R-PDSO-N2

1

BIDIRECTIONAL

.25 W

26 V

e3

30

260

SILICON

32 V

IEC-61000-4-2

D3V3F4U10LPQ-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

10

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

30 W

6.2 V

AVALANCHE

1 uA

4

3.3 V

SMALL OUTLINE

3.3 V

150 Cel

-55 Cel

NICKEL PALLADIUM GOLD

R-PDSO-N10

UNIDIRECTIONAL

ANODE

.35 W

ULTRA LOW CAPACITANCE

3.5 V

5.5 V

e4

260

SILICON

AEC-Q101; IATF 16949; IEC-61000-4-2, 4-5

DESD3V3S1BLP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

35 W

AVALANCHE

1

CHIP CARRIER

3.3 V

150 Cel

-65 Cel

MATTE TIN

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

3.8 V

e3

30

260

SILICON

6.5 V

DESD5V0V1BDLP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

20 W

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

-65 Cel

NICKEL GOLD

R-PBCC-N2

BIDIRECTIONAL

.25 W

6 V

e4

260

SILICON

10 V

IEC-61000-4-2

D3V3Q1B2LP3-7

Diodes Incorporated

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

30 W

AVALANCHE

1

CHIP CARRIER

3.3 V

150 Cel

-65 Cel

MATTE TIN

R-PBCC-N2

1

BIDIRECTIONAL

.25 W

3.8 V

e3

260

SILICON

6.5 V

IEC-61000-4-2

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.