NXP Semiconductors Transient Suppression Devices 2,400+

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

IP4234CZ6,125

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

100 W

7.5 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

85 Cel

-40 Cel

TIN

R-PDSO-G6

1

UNIDIRECTIONAL

ULTRA-LOW CAPACITANCE

6 V

e3

30

260

SILICON

9 V

IEC-60134

PESD5Z6.0,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

180 W

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

6 V

150 Cel

TIN

R-PDSO-F2

1

UNIDIRECTIONAL

Not Qualified

12 V

6.8 V

e3

30

260

SILICON

PESD5V0L2BT,215

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

350 W

7.6 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

TIN

R-PDSO-G3

1

BIDIRECTIONAL

Not Qualified

ULTRA LOW LEAKAGE CURRENT

TO-236AB

28 V

7 V

e3

30

260

SILICON

8.2 V

PESD5V0S2UQ,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

110 W

6.8 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

TIN

R-PDSO-F3

1

UNIDIRECTIONAL

Not Qualified

.425 W

20 V

6.46 V

e3

30

260

SILICON

7.14 V

PUSB2X4YH

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

YES

7.5 V

Transient Suppressors

UNIDIRECTIONAL

3.8 V

PUSB2X4Y,125

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

5 V

85 Cel

-40 Cel

R-PDSO-G6

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

6 V

SILICON

9 V

IEC-60134; IEC-61000-4-2, 4-5

PESD5V0U2BT,215

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMPLEX

7 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

TIN

R-PDSO-G3

1

BIDIRECTIONAL

Not Qualified

TO-236AB

5.5 V

e3

30

260

SILICON

9.5 V

PESD3V3L1UA,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

45 W

5.6 V

AVALANCHE

.3 uA

1

3.3 V

SMALL OUTLINE

Transient Suppressors

3.3 V

150 Cel

-55 Cel

TIN

R-PDSO-G2

1

UNIDIRECTIONAL

LOW CAPACITANCE

11 V

5.3 V

e3

30

260

SILICON

6 V

AEC-Q101; IEC-60134

PTVS5V0S1UR,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

6.7 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

-55 Cel

TIN

R-PDSO-F2

1

UNIDIRECTIONAL

Not Qualified

9.2 V

6.4 V

e3

30

260

SILICON

7 V

AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321

PESD5V0L5UY,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

25 W

6.8 V

AVALANCHE

.025 uA

5

5 V

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

-65 Cel

TIN

R-PDSO-G6

1

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

12 V

6.4 V

e3

30

260

SILICON

7.2 V

PESD3V3L1BA

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

500 W

6.4 V

AVALANCHE

2 uA

1

3.3 V

SMALL OUTLINE

Transient Suppressors

3.3 V

150 Cel

-65 Cel

Tin (Sn)

R-PDSO-G2

1

BIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

26 V

5.8 V

e3

30

260

SILICON

6.9 V

PUSB2X4Y

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

5 V

85 Cel

-40 Cel

TIN

R-PDSO-G6

1

UNIDIRECTIONAL

ULTRA LOW CAPACITANCE

6 V

e3

SILICON

9 V

IEC-60134; IEC-61000-4-2, 4-5

PESD5Z5.0

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

180 W

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

Tin (Sn)

R-PDSO-F2

1

UNIDIRECTIONAL

Not Qualified

12 V

6.2 V

e3

30

260

SILICON

PESD5V0L4UW,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

5

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

30 W

6.8 V

AVALANCHE

.025 uA

4

5 V

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

-65 Cel

TIN

R-PDSO-F5

1

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

13 V

6.46 V

e3

30

260

SILICON

7.14 V

PESD3V3S2UT

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

330 W

5.6 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

3.3 V

150 Cel

Tin (Sn)

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

TO-236AB

5.2 V

e3

30

260

SILICON

6 V

PESD5V0U1UA,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.8 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

TIN

R-PDSO-G2

1

UNIDIRECTIONAL

Not Qualified

5.8 V

e3

30

260

SILICON

8.8 V

PESD5V0U1BA,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

7 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

TIN

R-PDSO-G2

1

BIDIRECTIONAL

Not Qualified

5.5 V

e3

30

260

SILICON

9.5 V

PESD3V3U1UA,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

5.6 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

3.3 V

150 Cel

TIN

R-PDSO-G2

1

UNIDIRECTIONAL

Not Qualified

4.5 V

e3

30

260

SILICON

6.8 V

PESD3V3L4UG,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

5

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

30 W

5.6 V

AVALANCHE

.3 uA

4

3.3 V

SMALL OUTLINE

Transient Suppressors

3.3 V

150 Cel

-65 Cel

TIN

R-PDSO-G5

1

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

12 V

5.32 V

e3

30

260

SILICON

5.88 V

AEC-Q101

PESD3V3S1UB

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

330 W

5.6 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

3.3 V

150 Cel

Tin (Sn)

R-PDSO-F2

1

UNIDIRECTIONAL

Not Qualified

20 V

5.2 V

e3

30

260

SILICON

6 V

PESD3V3S4UD,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

200 W

5.6 V

AVALANCHE

4

SMALL OUTLINE

Transient Suppressors

3.3 V

150 Cel

TIN

R-PDSO-G6

1

UNIDIRECTIONAL

Not Qualified

LOW LEAKAGE CURRENT

12 V

5.3 V

e3

30

260

SILICON

5.9 V

PRTR5V0U2F,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.5 V

ZENER

1

CHIP CARRIER

Transient Suppressors

5.5 V

150 Cel

TIN

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

MO-252

6 V

e3

30

260

SILICON

9 V

PESD12VV1BL,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

290 W

15.7 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

12 V

150 Cel

-55 Cel

TIN

R-PBCC-N2

1

BIDIRECTIONAL

38 V

14.6 V

e3

30

260

SILICON

16.8 V

AEC-Q101; IEC-60134

PESD5V0L1UA,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

42 W

6.8 V

AVALANCHE

.1 uA

1

5 V

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

-55 Cel

TIN

R-PDSO-G2

1

UNIDIRECTIONAL

25 pF

LOW CAPACITANCE

12 V

6.4 V

e3

30

260

SILICON

7.2 V

AEC-Q101

PRTR5V0U2AX,235

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

4

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.5 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

5.5 V

85 Cel

-40 Cel

TIN

R-PDSO-G4

1

UNIDIRECTIONAL

6 V

e3

30

260

SILICON

9 V

PESD36VS2UT,215

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

YES

44 V

Transient Suppressors

36 V

TIN

1

UNIDIRECTIONAL

60 V

e3

30

260

PESD12VS1UB/DG,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

YES

15 V

Transient Suppressors

12 V

UNIDIRECTIONAL

35 V

PESD5V0S1UB

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

260 W

6.8 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

Tin (Sn)

R-PDSO-F2

1

UNIDIRECTIONAL

Not Qualified

20 V

6.4 V

e3

30

260

SILICON

7.2 V

PESD1LIN,135

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

160 W

27.8 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

24 V

150 Cel

TIN

R-PDSO-G2

1

BIDIRECTIONAL

Not Qualified

70 V

25.4 V

e3

30

260

SILICON

30.3 V

MMBZ27VAL,215

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

40 W

27 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

22 V

150 Cel

TIN

R-PDSO-G3

1

UNIDIRECTIONAL

.36 W

TO-236AB

40 V

25.65 V

e3

30

260

SILICON

28.35 V

PESD5V0U1UA

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.8 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

Tin (Sn)

R-PDSO-G2

1

UNIDIRECTIONAL

Not Qualified

e3

30

260

SILICON

PESD24VS2UT,215

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

160 W

27 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

24 V

150 Cel

TIN

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

TO-236AB

26.5 V

e3

30

260

SILICON

27.5 V

PESD5V0S1BLD

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

130 W

AVALANCHE

1

SMALL OUTLINE

5 V

150 Cel

TIN

R-PDSO-N2

1

BIDIRECTIONAL

Not Qualified

5.5 V

e3

SILICON

9.5 V

PESD5V0L1BA

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

500 W

7.6 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

Tin (Sn)

R-PDSO-G2

1

BIDIRECTIONAL

Not Qualified

7 V

e3

30

260

SILICON

8.2 V

PESD5V0F1BLD,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

8 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

5.5 V

125 Cel

-40 Cel

TIN

R-PDSO-N2

1

BIDIRECTIONAL

LOW CAPACITANCE, IEC-61643-321

11 V

6 V

e3

30

260

SILICON

10 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PESD3V3L2BT,215

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

350 W

6.4 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

3.3 V

150 Cel

TIN

R-PDSO-G3

1

BIDIRECTIONAL

Not Qualified

ULTRA LOW LEAKAGE CURRENT

TO-236AB

26 V

5.8 V

e3

30

260

SILICON

6.9 V

MMBZ27VCL,215

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

27 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

22 V

TIN

R-PDSO-G3

1

UNIDIRECTIONAL

TO-236AB

38 V

e3

30

260

SILICON

PESD5V0X1UAB,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

SMALL OUTLINE

5.5 V

150 Cel

R-PDSO-F2

UNIDIRECTIONAL

Not Qualified

5.8 V

SILICON

10 V

PESD1LIN

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

160 W

30.3 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

24 V

150 Cel

Tin (Sn)

R-PDSO-G2

1

BIDIRECTIONAL

Not Qualified

LOW LEAKAGE CURRENT, PART NUMBER WITH 15V ALSO AVAILABLE

25.4 V

e3

30

260

SILICON

30.3 V

PTVS3V3P1UP,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

5.6 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

3.3 V

150 Cel

TIN

R-PDSO-F2

1

UNIDIRECTIONAL

Not Qualified

8 V

5.2 V

e3

30

260

SILICON

6 V

AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321

PESD15VS1UB,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

160 W

18 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

15 V

150 Cel

TIN

R-PDSO-F2

1

UNIDIRECTIONAL

Not Qualified

40 V

17.6 V

e3

30

260

SILICON

18.4 V

PTVS30VS1UR,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

35.1 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

30 V

150 Cel

-55 Cel

TIN

R-PDSO-F2

1

UNIDIRECTIONAL

Not Qualified

48.4 V

33.3 V

e3

30

260

SILICON

36.8 V

AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321

MMBZ6V8AL,215

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

24 W

6.8 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

4.5 V

150 Cel

TIN

R-PDSO-G3

1

UNIDIRECTIONAL

.29 W

TO-236AB

9.6 V

6.46 V

e3

30

260

SILICON

7.14 V

PESD12VS1ULD,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

150 W

15 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

12 V

150 Cel

TIN

R-PDSO-N2

1

UNIDIRECTIONAL

Not Qualified

35 V

14.7 V

e3

30

260

SILICON

15.3 V

PESD5V0V1BB,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

45 W

6.8 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

-55 Cel

TIN

R-PDSO-F2

1

BIDIRECTIONAL

12.5 V

5.8 V

e3

30

260

SILICON

7.8 V

AEC-Q101; IEC-60134

PESD24VS1UB,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

160 W

27 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

24 V

150 Cel

TIN

R-PDSO-F2

1

UNIDIRECTIONAL

Not Qualified

70 V

26.5 V

e3

30

260

SILICON

27.5 V

PESD5V0S1BB/DG,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

YES

7.5 V

Transient Suppressors

5 V

BIDIRECTIONAL

14 V

PESD3V3L5UY

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

25 W

5.6 V

AVALANCHE

.3 uA

5

3.3 V

SMALL OUTLINE

Transient Suppressors

3.3 V

150 Cel

-65 Cel

Tin (Sn)

R-PDSO-G6

1

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

12 V

5.3 V

e3

30

260

SILICON

5.9 V

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.