NXP Semiconductors Transient Suppression Devices 2,400+

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

PESD5V0U1UB,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

6.8 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

TIN

R-PDSO-F2

1

UNIDIRECTIONAL

Not Qualified

5.8 V

e3

30

260

SILICON

8.8 V

NUP1301U,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.215 A

200 W

.715 V

AVALANCHE

2

SMALL OUTLINE

Rectifier Diodes

80 V

150 Cel

TIN

R-PDSO-G3

1

UNIDIRECTIONAL

.2 W

100 V

4 A

e3

30

260

SILICON

PESD5V0S4UD,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

200 W

6.8 V

AVALANCHE

4

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

TIN

R-PDSO-G6

1

UNIDIRECTIONAL

Not Qualified

LOW LEAKAGE CURRENT

13 V

6.4 V

e3

30

260

SILICON

7.2 V

PESD5V0X1ULD,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.5 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

5.5 V

150 Cel

TIN

R-PDSO-N2

1

UNIDIRECTIONAL

Not Qualified

5.8 V

e3

30

260

SILICON

10 V

PESD5V0S2BT

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

130 W

7.5 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

Tin (Sn)

R-PDSO-G3

1

BIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

TO-236AB

14 V

5.5 V

e3

30

260

SILICON

9.5 V

PESD5V0V1BB

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

45 W

AVALANCHE

1

SMALL OUTLINE

5 V

150 Cel

TIN

R-PDSO-F2

1

BIDIRECTIONAL

Not Qualified

5.8 V

e3

SILICON

7.8 V

PESD5V0V1BL,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

YES

6.8 V

Transient Suppressors

5 V

TIN

1

BIDIRECTIONAL

12.5 V

e3

30

260

PESD3V3L5UF,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

25 W

5.6 V

AVALANCHE

.3 uA

5

3.3 V

BOTTOM

Transient Suppressors

3.3 V

150 Cel

-65 Cel

TIN

R-PBCC-N6

1

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

MO-252

12 V

5.3 V

e3

30

260

SILICON

5.9 V

AEC-Q101

PUSB2X4DH

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

YES

7.5 V

Transient Suppressors

UNIDIRECTIONAL

4.3 V

PESD5V0L1UA

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

42 W

6.8 V

AVALANCHE

.1 uA

1

5 V

SMALL OUTLINE

5 V

150 Cel

-55 Cel

Tin (Sn)

R-PDSO-G2

1

UNIDIRECTIONAL

Not Qualified

25 pF

LOW CAPACITANCE

12 V

6.4 V

e3

30

260

SILICON

7.2 V

AEC-Q101

PESD5V0S1BBT/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

YES

7.5 V

Transient Suppressors

5 V

Matte Tin (Sn)

1

BIDIRECTIONAL

14 V

e3

PESD5V0L1ULD,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

42 W

6.8 V

AVALANCHE

.1 uA

1

5 V

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

-55 Cel

TIN

R-PDSO-N2

1

UNIDIRECTIONAL

Not Qualified

25 pF

LOW CAPACITANCE

12 V

6.4 V

e3

30

260

SILICON

7.2 V

AEC-Q101

PESD5V0S1BB,335

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

YES

7.5 V

Transient Suppressors

5 V

TIN

1

BIDIRECTIONAL

14 V

e3

30

260

PTVS18VP1UP,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

21 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

18 V

150 Cel

TIN

R-PDSO-F2

1

UNIDIRECTIONAL

Not Qualified

29.2 V

20 V

e3

30

260

SILICON

22.1 V

AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321

PESD15VL1BA

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

200 W

18.9 V

AVALANCHE

.05 uA

1

15 V

SMALL OUTLINE

Transient Suppressors

15 V

150 Cel

-65 Cel

Tin (Sn)

R-PDSO-G2

1

BIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

44 V

17.1 V

e3

30

260

SILICON

20.3 V

PTVS33VP1UP,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

38.7 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

33 V

150 Cel

TIN

R-PDSO-F2

1

UNIDIRECTIONAL

Not Qualified

53.3 V

36.7 V

e3

30

260

SILICON

40.6 V

AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321

PESD18VF1BLYL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

YES

22 V

Transient Suppressors

18 V

BIDIRECTIONAL

17 V

MMBZ12VAL,215

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

40 W

12 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

8.5 V

150 Cel

TIN

R-PDSO-G3

1

UNIDIRECTIONAL

.36 W

TO-236AB

17 V

11.4 V

e3

30

260

SILICON

12.6 V

PESD5V0V1BL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

45 W

AVALANCHE

1

CHIP CARRIER

5 V

150 Cel

TIN

R-PBCC-N2

1

BIDIRECTIONAL

Not Qualified

5.8 V

e3

SILICON

7.8 V

AEC-Q101; IEC-60134; IEC-61000-4-2, 4-5

PRTR5V0U4Y,125

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.5 V

ZENER

1

SMALL OUTLINE

Transient Suppressors

TIN

R-PDSO-G6

UNIDIRECTIONAL

Not Qualified

6 V

e3

30

260

SILICON

9 V

PESD5V0L2UU,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

70 W

6.2 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

-55 Cel

TIN

R-PDSO-G3

1

UNIDIRECTIONAL

13 V

5.8 V

e3

30

260

SILICON

6.6 V

AEC-Q101; IEC-60134

PESD5V0S1USF,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

35 W

7 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

-55 Cel

R-PBCC-N2

UNIDIRECTIONAL

IEC-61643-321

9 V

6 V

SILICON

8 V

IEC-60134; IEC-61000-4-2, 4-5

MMBZ27VAL,235

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

40 W

27 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

22 V

150 Cel

TIN

R-PDSO-G3

1

UNIDIRECTIONAL

.36 W

TO-236AB

40 V

25.65 V

e3

30

260

SILICON

28.35 V

PESD3V3L5UV,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

25 W

5.6 V

AVALANCHE

.3 uA

5

3.3 V

SMALL OUTLINE

Transient Suppressors

3.3 V

150 Cel

-65 Cel

TIN

R-PDSO-F6

1

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

12 V

5.3 V

e3

30

260

SILICON

5.9 V

PESD5V0U1BB

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

7 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

Tin (Sn)

R-PDSO-F2

1

BIDIRECTIONAL

Not Qualified

5.5 V

e3

30

260

SILICON

9.5 V

PESD5V0X1BCAL,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

YES

9.8 V

Transient Suppressors

5.5 V

TIN

1

BIDIRECTIONAL

17 V

e3

30

260

BZA408B,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 4 ELEMENTS

20 W

AVALANCHE

4

SMALL OUTLINE

Transient Suppressors

5.5 V

150 Cel

-65 Cel

TIN

R-PDSO-G6

1

BIDIRECTIONAL

Not Qualified

.26 W

e3

30

260

SILICON

IP4369CX4YL

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

YES

8 V

Transient Suppressors

UNIDIRECTIONAL

4 V

PESD5V0L1UL,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

42 W

6.8 V

AVALANCHE

.1 uA

1

5 V

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

-55 Cel

TIN

R-PDSO-N2

1

UNIDIRECTIONAL

25 pF

LOW CAPACITANCE

12 V

6.4 V

e3

30

260

SILICON

7.2 V

AEC-Q101

PESD5V0L2UM,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

30 W

6.8 V

AVALANCHE

2

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

TIN

R-PBCC-N3

1

UNIDIRECTIONAL

ANODE

Not Qualified

.25 W

6.46 V

e3

30

260

SILICON

7.14 V

PESD5V0U1UT,215

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

80 W

7.6 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

TIN

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

TO-236AB

21 V

7 V

e3

30

260

SILICON

8.2 V

PTVS3V3S1UR

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

5.6 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

3.3 V

150 Cel

-55 Cel

Tin (Sn)

R-PDSO-F2

1

UNIDIRECTIONAL

Not Qualified

8 V

5.2 V

e3

30

260

SILICON

6 V

AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321

PESD12VS1UB

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

180 W

15 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

12 V

150 Cel

Tin (Sn)

R-PDSO-F2

1

UNIDIRECTIONAL

Not Qualified

35 V

14.7 V

e3

30

260

SILICON

15.3 V

PTVS26VS1UR,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

400 W

30.4 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

26 V

150 Cel

-55 Cel

TIN

R-PDSO-F2

1

UNIDIRECTIONAL

Not Qualified

42.1 V

28.9 V

e3

30

260

SILICON

31.9 V

AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321

PTVS58VP1UP,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

67.8 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

58 V

150 Cel

TIN

R-PDSO-F2

1

UNIDIRECTIONAL

Not Qualified

93.6 V

64.4 V

e3

30

260

SILICON

71.2 V

AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321

PESD24VL2BT,215

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

200 W

27.8 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

24 V

150 Cel

TIN

R-PDSO-G3

1

BIDIRECTIONAL

Not Qualified

ULTRA LOW LEAKAGE CURRENT

TO-236AB

70 V

25.4 V

e3

30

260

SILICON

30.3 V

PESD5V0S1UL,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

150 W

6.8 V

AVALANCHE

1

CHIP CARRIER

Transient Suppressors

5 V

150 Cel

TIN

R-PBCC-N2

1

UNIDIRECTIONAL

Not Qualified

LOW LEAKAGE CURRENT

20 V

6.4 V

e3

30

260

SILICON

7.2 V

PTVS15VP1UP,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

17.6 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

15 V

150 Cel

TIN

R-PDSO-F2

1

UNIDIRECTIONAL

Not Qualified

24.4 V

16.7 V

e3

30

260

SILICON

18.5 V

AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321

PUSB3F96X

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

YES

6 V

Transient Suppressors

UNIDIRECTIONAL

4.6 V

PESD12VS2UQ,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

110 W

15 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

12 V

150 Cel

TIN

R-PDSO-F3

1

UNIDIRECTIONAL

Not Qualified

.425 W

35 V

14.25 V

e3

30

260

SILICON

15.75 V

PESD3V3L5UYT/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

6

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 5 ELEMENTS

25 W

5.6 V

AVALANCHE

.3 uA

5

3.3 V

SMALL OUTLINE

Transient Suppressors

3.3 V

150 Cel

-65 Cel

R-PDSO-G6

UNIDIRECTIONAL

LOW CAPACITANCE

12 V

5.3 V

SILICON

5.9 V

PESD5V0X1UALD,315

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

7.5 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

5.5 V

150 Cel

TIN

R-PDSO-N2

1

UNIDIRECTIONAL

Not Qualified

9 V

5.8 V

e3

30

260

SILICON

10 V

PTVS60VP1UP,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

600 W

70.2 V

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

60 V

150 Cel

TIN

R-PDSO-F2

1

UNIDIRECTIONAL

Not Qualified

96.8 V

66.7 V

e3

30

260

SILICON

73.7 V

AEC-Q101; IEC-60134; IEC-61000-4-2; IEC-61643-321

PESD15VS2UAT,215

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 2 ELEMENTS

160 W

18 V

AVALANCHE

2

SMALL OUTLINE

Transient Suppressors

15 V

150 Cel

TIN

R-PDSO-G3

1

UNIDIRECTIONAL

Not Qualified

TO-236AB

17.6 V

e3

30

260

SILICON

18.4 V

PESD3V3L4UGT/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

5

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

30 W

5.6 V

AVALANCHE

.3 uA

4

3.3 V

SMALL OUTLINE

Transient Suppressors

3.3 V

150 Cel

-65 Cel

R-PDSO-G5

UNIDIRECTIONAL

LOW CAPACITANCE

12 V

5.32 V

SILICON

5.88 V

AEC-Q101

PESD5V0L1UB,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

42 W

6.8 V

AVALANCHE

.1 uA

1

5 V

SMALL OUTLINE

Transient Suppressors

5 V

150 Cel

-55 Cel

TIN

R-PDSO-F2

1

UNIDIRECTIONAL

25 pF

LOW CAPACITANCE

12 V

6.4 V

e3

30

260

SILICON

7.2 V

AEC-Q101

BZT03-C18T/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ELLIPTICAL

GLASS

SINGLE

300 W

ZENER

5 uA

1

LONG FORM

175 Cel

E-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

1.3 W

25.6 V

16.8 V

SILICON

PESD3V3L4UW

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

FLAT

5

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 4 ELEMENTS

30 W

5.6 V

AVALANCHE

.3 uA

4

3.3 V

SMALL OUTLINE

Transient Suppressors

3.3 V

150 Cel

-65 Cel

Tin (Sn)

R-PDSO-F5

1

UNIDIRECTIONAL

Not Qualified

LOW CAPACITANCE

12 V

5.32 V

e3

30

260

SILICON

5.88 V

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.