NXP Semiconductors Transient Suppression Devices 2,400+

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

BZD142W-200T/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

100 W

ZENER

1

LONG FORM

TIN

O-LELF-R2

1

UNIDIRECTIONAL

Not Qualified

1.5 W

e3

SILICON

BZG04-8V2/T3

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

1

SMALL OUTLINE

8.2 V

R-PDSO-C2

UNIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

DO-214AC

9.4 V

SILICON

BZG04-13T/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

1

SMALL OUTLINE

13 V

R-PDSO-C2

UNIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

DO-214AC

15.3 V

SILICON

BZG04-68115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

5 uA

1

SMALL OUTLINE

175 Cel

-65 Cel

R-PDSO-C2

UNIDIRECTIONAL

Not Qualified

DO-214AC

114 V

77 V

SILICON

BZD23-C91

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

5 mA

SINGLE

91 V

150 W

ZENER

5 uA

1

LONG FORM

Voltage Reference Diodes

5 %

175 Cel

200 ohm

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

2.5 W

126 V

85 V

SILICON

BZG04-39

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

39 V

R-PDSO-C2

UNIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

DO-214AC

65.5 V

44 V

SILICON

BZD27-C9V1

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

300 W

AVALANCHE

100 uA

1

LONG FORM

175 Cel

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

Not Qualified

.8 W

13.3 V

8.5 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

BZG04-20/T3

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

1

SMALL OUTLINE

20 V

R-PDSO-C2

UNIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

DO-214AC

22.8 V

SILICON

BZD27-C430T/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

300 W

AVALANCHE

5 uA

1

LONG FORM

175 Cel

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

Not Qualified

.8 W

603 V

400 V

SILICON

IP4790CZ38,118

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

YES

7.5 V

Transient Suppressors

UNIDIRECTIONAL

8 V

BZD27-C130/T3

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

300 W

AVALANCHE

5 uA

1

LONG FORM

175 Cel

TIN

O-LELF-R2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

.8 W

185 V

124 V

e3

SILICON

BZD23-C270AMO

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

150 W

ZENER

5 uA

1

LONG FORM

175 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

2.5 W

380 V

251 V

SILICON

IP4085CX4/LF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

GRID ARRAY

S-PBGA-B4

UNIDIRECTIONAL

Not Qualified

1 W

16 V

SILICON

BZG04-200T/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

1

SMALL OUTLINE

200 V

R-PDSO-C2

UNIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

DO-214AC

228 V

SILICON

BZD27-C470/T3

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

300 W

AVALANCHE

5 uA

1

LONG FORM

175 Cel

TIN

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

Not Qualified

.8 W

655 V

440 V

e3

SILICON

IP4085CX4/LF/P,135

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

YES

16 V

Transient Suppressors

UNIDIRECTIONAL

20 V

BZD23-C62/A52A

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

150 W

ZENER

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

2.5 W

58 V

SILICON

BZD142W-180,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

100 W

ZENER

1

LONG FORM

150 Cel

-65 Cel

O-LELF-R2

UNIDIRECTIONAL

Not Qualified

1.5 W

NOT SPECIFIED

NOT SPECIFIED

SILICON

BZG04-110T/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

1

SMALL OUTLINE

110 V

R-PDSO-C2

UNIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

DO-214AC

124 V

SILICON

BZD27-C75,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

300 W

AVALANCHE

5 uA

1

LONG FORM

175 Cel

-65 Cel

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

Not Qualified

.8 W

103.5 V

70 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

BZD27-C160/T3

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

300 W

AVALANCHE

5 uA

1

LONG FORM

175 Cel

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

Not Qualified

.8 W

224 V

153 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

BZD23-C51/A52R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

150 W

ZENER

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

2.5 W

48 V

SILICON

BZG04-36

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

36 V

R-PDSO-C2

UNIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

DO-214AC

60.7 V

40 V

SILICON

IP4302CX2/A

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

GRID ARRAY

5 V

85 Cel

-35 Cel

R-PBGA-B2

BIDIRECTIONAL

14 V

SILICON

IEC-60134; IEC-61000-4-2

BZD23-C20

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

25 mA

SINGLE

20 V

150 W

ZENER

5 uA

1

LONG FORM

Voltage Reference Diodes

5 %

175 Cel

15 ohm

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

2.5 W

28.4 V

18.8 V

SILICON

BZD27-C8V2/T3

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

300 W

AVALANCHE

1200 uA

1

LONG FORM

175 Cel

TIN

O-LELF-R2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

.8 W

12.3 V

7.7 V

e3

SILICON

BZD27-C240/T3

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

300 W

AVALANCHE

5 uA

1

LONG FORM

175 Cel

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

Not Qualified

.8 W

336 V

228 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

BZG04-27T/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

1

SMALL OUTLINE

27 V

R-PDSO-C2

UNIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

DO-214AC

31 V

SILICON

BZG04-36T/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

1

SMALL OUTLINE

36 V

R-PDSO-C2

UNIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

DO-214AC

40 V

SILICON

BZD23-C56

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

10 mA

SINGLE

56 V

150 W

ZENER

5 uA

1

LONG FORM

Voltage Reference Diodes

5 %

175 Cel

60 ohm

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

2.5 W

78.6 V

52 V

SILICON

BZD23-C18T/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

25 mA

SINGLE

18 V

150 W

ZENER

5 uA

1

LONG FORM

Voltage Reference Diodes

5 %

175 Cel

15 ohm

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

2.5 W

25.6 V

16.8 V

SILICON

BZD27-C300

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

300 W

AVALANCHE

5 uA

1

LONG FORM

175 Cel

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

Not Qualified

.8 W

419 V

280 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

BZG04-12T/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

1

SMALL OUTLINE

12 V

R-PDSO-C2

UNIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

DO-214AC

13.8 V

SILICON

BZD23-C130/A52A

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

150 W

ZENER

1

LONG FORM

175 Cel

-65 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

2.5 W

124 V

SILICON

BZG04-36115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

5 uA

1

SMALL OUTLINE

175 Cel

-65 Cel

R-PDSO-C2

UNIDIRECTIONAL

Not Qualified

DO-214AC

60.7 V

40 V

SILICON

BZD27-C100

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

300 W

AVALANCHE

5 uA

1

LONG FORM

175 Cel

TIN

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

Not Qualified

.8 W

139 V

94 V

e3

SILICON

BZD23-C430AMO

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

300 W

430 V

AVALANCHE

5 uA

1

LONG FORM

Transient Suppressors

430 V

175 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

2.5 W

603 V

SILICON

BZG04-47T/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

1

SMALL OUTLINE

47 V

Tin/Lead (Sn80Pb20)

R-PDSO-C2

UNIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

DO-214AC

52 V

e0

SILICON

BZD27-C510/T3

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

300 W

AVALANCHE

5 uA

1

LONG FORM

175 Cel

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

Not Qualified

.8 W

707 V

480 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

BZG04-220

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

220 V

R-PDSO-C2

UNIDIRECTIONAL

Not Qualified

DO-214AC

380 V

251 V

SILICON

BZD27-C180/T3

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

300 W

AVALANCHE

5 uA

1

LONG FORM

175 Cel

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

Not Qualified

.8 W

249 V

168 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

BZD27-C470

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

300 W

AVALANCHE

5 uA

1

LONG FORM

175 Cel

TIN

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

Not Qualified

.8 W

655 V

440 V

e3

SILICON

BZD27-C30

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

300 W

AVALANCHE

5 uA

1

LONG FORM

175 Cel

TIN

O-LELF-R2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

.8 W

42.2 V

28 V

e3

SILICON

BZD27-C39/T3

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

300 W

AVALANCHE

5 uA

1

LONG FORM

175 Cel

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

Not Qualified

.8 W

54.1 V

37 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

BZD27-C47

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

300 W

AVALANCHE

5 uA

1

LONG FORM

175 Cel

TIN

O-LELF-R2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

.8 W

65.5 V

44 V

e3

SILICON

BZG04-82115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

5 uA

1

SMALL OUTLINE

175 Cel

-65 Cel

R-PDSO-C2

UNIDIRECTIONAL

Not Qualified

DO-214AC

139 V

94 V

SILICON

BZD27-C300,135

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

300 W

AVALANCHE

5 uA

1

LONG FORM

175 Cel

-65 Cel

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

Not Qualified

.8 W

419 V

280 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

BZD27-C39,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

300 W

AVALANCHE

5 uA

1

LONG FORM

175 Cel

-65 Cel

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

Not Qualified

.8 W

54.1 V

37 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.