NXP Semiconductors Transient Suppression Devices 2,400+

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Working Test Current Config Nominal Reference Voltage Maximum Output Current Maximum Non Repetitive Peak Reverse Power Dissipation Maximum Forward Voltage (VF) Nominal Breakdown Voltage Maximum Reverse Recovery Time Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Voltage Tolerance Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Maximum Dynamic Impedance Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Polarity Case Connection Qualification Maximum Power Dissipation Minimum Diode Capacitance Additional Features JEDEC-95 Code Maximum Clamping Voltage Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Maximum Breakdown Voltage Reference Standard

BZD23-C24T/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

150 W

ZENER

5 uA

1

LONG FORM

175 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

2.5 W

33.8 V

22.8 V

SILICON

BZD23-C82

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

10 mA

SINGLE

82 V

150 W

ZENER

5 uA

1

LONG FORM

Voltage Reference Diodes

5 %

175 Cel

100 ohm

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

2.5 W

114 V

77 V

SILICON

BZD27-C270/T3

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

300 W

AVALANCHE

5 uA

1

LONG FORM

175 Cel

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

Not Qualified

.8 W

380 V

251 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

BZD27-C18/T3

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

300 W

AVALANCHE

5 uA

1

LONG FORM

175 Cel

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

Not Qualified

.8 W

25.6 V

16.8 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

BZG04-27/T3

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

1

SMALL OUTLINE

27 V

R-PDSO-C2

UNIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

DO-214AC

31 V

SILICON

BZD27-C220,135

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

300 W

AVALANCHE

5 uA

1

LONG FORM

175 Cel

-65 Cel

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

Not Qualified

.8 W

305 V

208 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

BZD27-C24/T3

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

300 W

AVALANCHE

5 uA

1

LONG FORM

175 Cel

TIN

O-LELF-R2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

.8 W

33.8 V

22.8 V

e3

SILICON

BZG04-150115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

5 uA

1

SMALL OUTLINE

175 Cel

-65 Cel

R-PDSO-C2

UNIDIRECTIONAL

Not Qualified

DO-214AC

249 V

168 V

SILICON

BZD23-C36AMO

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

300 W

36 V

AVALANCHE

5 uA

1

LONG FORM

175 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

2.5 W

50.1 V

34 V

SILICON

38 V

BZD27-C24,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

300 W

AVALANCHE

5 uA

1

LONG FORM

175 Cel

-65 Cel

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

Not Qualified

.8 W

33.8 V

22.8 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

BZG04-C100

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

1

SMALL OUTLINE

175 Cel

-65 Cel

R-PDSO-C2

UNIDIRECTIONAL

Not Qualified

DO-214AC

114 V

SILICON

BZG04-56T/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

1

SMALL OUTLINE

56 V

R-PDSO-C2

UNIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

DO-214AC

64 V

SILICON

BZD23-C5V1/A52R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

LONG FORM

200 Cel

-65 Cel

O-PALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

4.8 V

SILICON

5.4 V

BZG04-51T/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

1

SMALL OUTLINE

51 V

R-PDSO-C2

UNIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

DO-214AC

58 V

SILICON

BZG04-68T/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

1

SMALL OUTLINE

68 V

R-PDSO-C2

UNIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

DO-214AC

77 V

SILICON

BZG04-13/T3

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

1

SMALL OUTLINE

13 V

R-PDSO-C2

UNIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

DO-214AC

15.3 V

SILICON

BZG04-12

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

12 V

R-PDSO-C2

UNIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

DO-214AC

20.9 V

13.8 V

SILICON

BZD27-C30,115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

300 W

AVALANCHE

5 uA

1

LONG FORM

175 Cel

-65 Cel

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

Not Qualified

.8 W

42.2 V

28 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

BZG04-24T/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

1

SMALL OUTLINE

24 V

R-PDSO-C2

UNIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

DO-214AC

28 V

SILICON

BZD27-C8V2T/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

300 W

AVALANCHE

1200 uA

1

LONG FORM

175 Cel

TIN

O-LELF-R2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

.8 W

12.3 V

7.7 V

e3

SILICON

BZD23-C150AMO

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

150 W

ZENER

5 uA

1

LONG FORM

175 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

2.5 W

204 V

138 V

SILICON

BZD27-C8V2,135

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

300 W

AVALANCHE

1200 uA

1

LONG FORM

175 Cel

-65 Cel

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

Not Qualified

.8 W

12.3 V

7.7 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

BZG04-C10

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

1

SMALL OUTLINE

175 Cel

-65 Cel

R-PDSO-C2

UNIDIRECTIONAL

Not Qualified

DO-214AC

11.4 V

SILICON

BZD23-C47T/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

150 W

ZENER

5 uA

1

LONG FORM

175 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

2.5 W

65.5 V

44 V

SILICON

BZD23-C9V1AMO

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

50 mA

SINGLE

9.1 V

300 W

9.1 V

AVALANCHE

100 uA

1

LONG FORM

Voltage Reference Diodes

5 %

175 Cel

4 ohm

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

2.5 W

13.3 V

8.5 V

SILICON

9.6 V

BZG04-C51

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

1

SMALL OUTLINE

175 Cel

-65 Cel

R-PDSO-C2

UNIDIRECTIONAL

Not Qualified

DO-214AC

58 V

SILICON

BZD27-C15

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

300 W

AVALANCHE

5 uA

1

LONG FORM

175 Cel

TIN

O-LELF-R2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

.8 W

20.9 V

13.8 V

e3

SILICON

BZG04-160T/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

1

SMALL OUTLINE

160 V

R-PDSO-C2

UNIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

DO-214AC

188 V

SILICON

BZD27-C180

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

300 W

AVALANCHE

5 uA

1

LONG FORM

175 Cel

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

Not Qualified

.8 W

249 V

168 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IP4778CZ38/V,118

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

YES

7.5 V

Transient Suppressors

BIDIRECTIONAL

8 V

BZG04-30/T3

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

1

SMALL OUTLINE

30 V

R-PDSO-C2

UNIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

DO-214AC

34 V

SILICON

BZG04-62

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

62 V

R-PDSO-C2

UNIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

DO-214AC

103.5 V

70 V

SILICON

BZD27-C300T/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

300 W

AVALANCHE

5 uA

1

LONG FORM

175 Cel

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

Not Qualified

.8 W

419 V

280 V

SILICON

BZD27-C330

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

300 W

AVALANCHE

5 uA

1

LONG FORM

175 Cel

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

Not Qualified

.8 W

459 V

310 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

IP4385CX4/LF,135

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

7 V

AVALANCHE

1

GRID ARRAY

Transient Suppressors

S-PBGA-B4

UNIDIRECTIONAL

Not Qualified

.7 W

10 V

7 V

SILICON

BZD23-C100

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

5 mA

SINGLE

100 V

150 W

ZENER

5 uA

1

LONG FORM

Voltage Reference Diodes

5 %

175 Cel

200 ohm

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

2.5 W

139 V

94 V

SILICON

BZD27-C7V5

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

300 W

AVALANCHE

1500 uA

1

LONG FORM

175 Cel

TIN

O-LELF-R2

1

UNIDIRECTIONAL

ISOLATED

Not Qualified

.8 W

11.3 V

7 V

e3

SILICON

BZD23-C16AMO

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

25 mA

SINGLE

16 V

300 W

16 V

AVALANCHE

5 uA

1

LONG FORM

Voltage Reference Diodes

5 %

175 Cel

15 ohm

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

2.5 W

22.9 V

15.3 V

SILICON

17.1 V

BZA100

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

GULL WING

20

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON ANODE, 18 ELEMENTS

27.5 W

6.8 V

AVALANCHE

2 uA

18

SMALL OUTLINE

Transient Suppressors

7.2 V

150 Cel

Nickel/Palladium/Gold (Ni/Pd/Au)

R-PDSO-G20

1

UNIDIRECTIONAL

Not Qualified

1.25 W

120 pF

MS-013AC

11 V

e4

30

260

SILICON

BZD27-C470,135

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

300 W

AVALANCHE

5 uA

1

LONG FORM

175 Cel

-65 Cel

TIN

O-LELF-R2

NOT APPLICABLE

UNIDIRECTIONAL

ISOLATED

Not Qualified

.8 W

655 V

440 V

e3

NOT SPECIFIED

NOT SPECIFIED

SILICON

BZD27-C330,135

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

300 W

AVALANCHE

5 uA

1

LONG FORM

175 Cel

-65 Cel

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

Not Qualified

.8 W

459 V

310 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

BZD23-C180

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

5 mA

SINGLE

180 V

150 W

ZENER

5 uA

1

LONG FORM

Voltage Reference Diodes

5 %

175 Cel

400 ohm

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

2.5 W

249 V

168 V

SILICON

IP4385CX4/LF

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

BOTTOM

BALL

4

YES

SQUARE

PLASTIC/EPOXY

SINGLE

AVALANCHE

1

GRID ARRAY

5.5 V

85 Cel

-30 Cel

S-PBGA-B4

UNIDIRECTIONAL

Not Qualified

.7 W

7 V

SILICON

IEC-60134; IEC-61000-4-2, 4-5

BZD23-C300T/R

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

AXIAL

WIRE

2

NO

ROUND

GLASS

SINGLE

150 W

ZENER

5 uA

1

LONG FORM

Transient Suppressors

300 V

175 Cel

O-LALF-W2

UNIDIRECTIONAL

ISOLATED

Not Qualified

2.5 W

419 V

280 V

SILICON

BZG04-24115

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

5 uA

1

SMALL OUTLINE

175 Cel

-65 Cel

R-PDSO-C2

UNIDIRECTIONAL

Not Qualified

DO-214AC

42.2 V

28 V

SILICON

BZD27-C16

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

END

WRAP AROUND

2

YES

ROUND

GLASS

SINGLE

300 W

AVALANCHE

5 uA

1

LONG FORM

175 Cel

O-LELF-R2

UNIDIRECTIONAL

ISOLATED

Not Qualified

.8 W

22.9 V

15.3 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

BZG04-43

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

1

SMALL OUTLINE

Transient Suppressors

43 V

R-PDSO-C2

UNIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

DO-214AC

70.8 V

48 V

SILICON

BZG04-24/T3

NXP Semiconductors

TRANS VOLTAGE SUPPRESSOR DIODE

DUAL

C BEND

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

300 W

AVALANCHE

1

SMALL OUTLINE

24 V

R-PDSO-C2

UNIDIRECTIONAL

Not Qualified

HIGH RELIABILITY

DO-214AC

28 V

SILICON

Transient Suppression Devices

Transient suppression devices are electronic components used to protect electronic circuits from voltage spikes and surges that can damage or destroy sensitive components. These voltage transients can be caused by lightning strikes, power surges, electrostatic discharge, or electromagnetic interference.

Transient suppression devices work by providing a low-impedance path for the transient current to flow to ground, diverting the energy away from the sensitive components. There are several types of transient suppression devices, including:

1. Varistors: Varistors are voltage-dependent resistors that provide a high resistance under normal operating conditions, but a low resistance under high-voltage transient conditions. They are commonly used in power supplies, motor controls, and lighting systems.

2. Metal oxide semiconductor field-effect transistors (MOSFETs): MOSFETs are used as voltage clamps to limit the voltage to a safe level during transient events. They are commonly used in automotive electronics and power supplies.

3. TVS diodes: TVS (transient voltage suppressor) diodes are used to protect electronic circuits from voltage spikes and surges by providing a low-impedance path to ground. They are commonly used in telecommunications, power supplies, and automotive electronics.

4. Gas discharge tubes: Gas discharge tubes (GDTs) are used to protect electronic circuits from high-voltage surges by ionizing a gas within the tube to provide a low-impedance path to ground. They are commonly used in telecommunications and power systems.

Transient suppression devices come in different package sizes and current ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.