VARIABLE CAPACITANCE DIODE Varactor Diodes 2,400+

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Part RoHS Manufacturer Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Minimum Quality Factor Package Body Material Config Variable Capacitance Diode Classification Frequency Band Maximum Output Current Maximum Forward Voltage (VF) Maximum Reverse Recovery Time Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features JEDEC-95 Code Diode Cap Tolerance Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Minimum Diode Capacitance Ratio Reference Standard

UZC930TC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

Matte Tin (Sn)

R-PDSO-G3

1

Not Qualified

.33 W

4.9 pF

LOW NOISE

12.24 %

12 V

e3

40

260

SILICON

3

UZC832ATC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

R-PDSO-G3

Not Qualified

.33 W

22 pF

LOW NOISE

10 %

25 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

5

UZMV829A

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

250

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

150 Cel

-55 Cel

R-PDSO-G2

Not Qualified

.33 W

8.2 pF

25 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

4.3

UZC836A

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

100

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

R-PDSO-G3

Not Qualified

.33 W

100 pF

LOW NOISE

10 %

25 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

5

UZMV829B

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

250

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

150 Cel

-55 Cel

R-PDSO-G2

Not Qualified

.33 W

8.2 pF

5 %

25 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

4.3

ZMV832

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

25 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-G2

1

Not Qualified

.33 W

22 pF

20 %

25 V

e3

30

260

SILICON

5

ZC824BN

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

47 pF

5 %

SILICON

5

FMMV2102TA

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

450

PLASTIC/EPOXY

SINGLE

ABRUPT

1

SMALL OUTLINE

R-PDSO-G3

Not Qualified

.33 W

8.2 pF

LOW NOISE

30 V

SILICON

2.6

ZC820AM

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

10 pF

10 %

SILICON

4.5

UZMV830B

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

150 Cel

-55 Cel

R-PDSO-G2

Not Qualified

.33 W

10 pF

5 %

25 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

4.5

ZC826M

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

100

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

MATTE TIN

R-PSIP-W2

Not Qualified

.3 W

100 pF

e3

NOT SPECIFIED

NOT SPECIFIED

SILICON

5

UFSD273TA

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

250

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

HYPERABRUPT

2

SMALL OUTLINE

85 Cel

-55 Cel

R-PDSO-G3

Not Qualified

.3 W

33.5 pF

10.45 %

12 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

2

ZMV931TC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

R-PDSO-G2

Not Qualified

.33 W

7.15 pF

LOW NOISE

9.09 %

12 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

ZC835A

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

100

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

MATTE TIN

R-PDSO-G3

1

Not Qualified

.33 W

68 pF

LOW NOISE

10 %

25 V

e3

SILICON

5

ZC835ATC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

100

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

MATTE TIN

R-PDSO-G3

1

Not Qualified

.33 W

68 pF

LOW NOISE

10 %

25 V

e3

SILICON

5

ZMV829

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

250

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

25 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-G2

1

Not Qualified

.33 W

8.2 pF

20 %

25 V

e3

30

260

SILICON

4.3

UZC933TC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

150

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

Matte Tin (Sn)

R-PDSO-G3

1

Not Qualified

.33 W

22.5 pF

LOW NOISE

20 %

12 V

e3

40

260

SILICON

3.5

UZMV833BTC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

R-PDSO-G2

Not Qualified

.33 W

33 pF

LOW NOISE

5 %

25 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

5

ZC825M

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

100

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

MATTE TIN

R-PSIP-W2

Not Qualified

.3 W

68 pF

e3

NOT SPECIFIED

NOT SPECIFIED

SILICON

5

ZMV833A

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

25 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-G2

1

Not Qualified

.33 W

33 pF

25 V

e3

30

260

SILICON

5

ZC823BM

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

33 pF

5 %

SILICON

5

UZMV830BTA

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

R-PDSO-G2

Not Qualified

.33 W

10 pF

LOW NOISE

5 %

25 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

4.5

ZMV833BTC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

Varactors

25 V

MATTE TIN

R-PDSO-G2

1

Not Qualified

.33 W

33 pF

LOW NOISE

5 %

25 V

e3

30

260

SILICON

5

UZV950V2TA

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

250

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

85 Cel

-55 Cel

R-PDSO-F2

Not Qualified

.25 W

7.05 pF

10.64 %

12 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

2

ZMV835TC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

100

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

150 Cel

-55 Cel

R-PDSO-G2

Not Qualified

.33 W

68 pF

20 %

25 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

5

UZC931TA

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

Matte Tin (Sn)

R-PDSO-G3

1

Not Qualified

.33 W

7.15 pF

LOW NOISE

9.09 %

12 V

e3

40

260

SILICON

3.625

FMMV2103

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

400

PLASTIC/EPOXY

SINGLE

ABRUPT

1

SMALL OUTLINE

R-PDSO-G3

Not Qualified

.33 W

10 pF

LOW NOISE

10 %

30 V

SILICON

2.6

ZC823AN

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

SINGLE

WIRE

2

NO

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

IN-LINE

R-PSIP-W2

Not Qualified

.3 W

33 pF

10 %

SILICON

5

ZC829ATC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

250

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

R-PDSO-G3

Not Qualified

.33 W

8.2 pF

LOW NOISE

10 %

25 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

4.3

UZC932TC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

Matte Tin (Sn)

R-PDSO-G3

1

Not Qualified

.33 W

9.5 pF

LOW NOISE

10.53 %

12 V

e3

40

260

SILICON

3.091

BBY40TC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

R-PDSO-G3

Not Qualified

.33 W

LOW NOISE

10.34 %

28 V

SILICON

5

ZC932TC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

R-PDSO-G3

Not Qualified

.33 W

9.5 pF

LOW NOISE

10.53 %

12 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

3.091

UZMV831A

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

150 Cel

-55 Cel

R-PDSO-G2

Not Qualified

.33 W

15 pF

25 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

4.5

ZMV833ATC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

Varactors

25 V

MATTE TIN

R-PDSO-G2

1

Not Qualified

.33 W

33 pF

LOW NOISE

10 %

25 V

e3

30

260

SILICON

5

ZC829BTC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

250

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

R-PDSO-G3

Not Qualified

.33 W

8.2 pF

LOW NOISE

5 %

25 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

4.3

ZMDC953ATA

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

YES

250

Varactors

12 V

30

260

ZC833B

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

Matte Tin (Sn)

R-PDSO-G3

1

Not Qualified

.33 W

33 pF

LOW NOISE

5 %

25 V

e3

40

260

SILICON

5

UZC834B

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

Matte Tin (Sn)

R-PDSO-G3

1

Not Qualified

.33 W

47 pF

LOW NOISE

5 %

25 V

e3

40

260

SILICON

5

FMMV2104

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

400

PLASTIC/EPOXY

SINGLE

ABRUPT

1

SMALL OUTLINE

R-PDSO-G3

Not Qualified

.33 W

12 pF

LOW NOISE

10 %

30 V

SILICON

2.6

UZC831ATC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

R-PDSO-G3

Not Qualified

.33 W

15 pF

LOW NOISE

10 %

25 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

4.5

ZC830A

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

MATTE TIN

R-PDSO-G3

1

Not Qualified

.33 W

10 pF

LOW NOISE

10 %

25 V

e3

SILICON

4.5

ZMV835

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

100

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

25 V

150 Cel

-55 Cel

MATTE TIN

R-PDSO-G2

1

Not Qualified

.33 W

68 pF

20 %

25 V

e3

30

260

SILICON

5

UZMV931TC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

300

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

R-PDSO-G2

Not Qualified

.33 W

7.15 pF

LOW NOISE

9.09 %

12 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

UZC829BTA

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

250

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

R-PDSO-G3

Not Qualified

.33 W

8.2 pF

LOW NOISE

5 %

25 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

4.3

ZV832BV2TC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

Varactors

25 V

MATTE TIN

R-PDSO-F2

1

Not Qualified

.25 W

22 pF

LOW NOISE

5 %

25 V

e3

30

260

SILICON

5

UZC832BTC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

Matte Tin (Sn)

R-PDSO-G3

1

Not Qualified

.33 W

22 pF

LOW NOISE

5 %

25 V

e3

40

260

SILICON

5

FMMV3102

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

R-PDSO-G3

Not Qualified

.33 W

22.5 pF

LOW NOISE

11.11 %

30 V

SILICON

4.5

ZC834TC

Diodes Incorporated

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

200

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

R-PDSO-G3

Not Qualified

.33 W

47 pF

LOW NOISE

20 %

25 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

5

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.