VARIABLE CAPACITANCE DIODE Varactor Diodes 2,400+

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	No. of Elements	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
ZC836A	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE					MATTE TIN	R-PDSO-G3	1	Not Qualified	.33 W	100 pF	LOW NOISE	10 %	25 V	e3			SILICON	5
UZDC833A	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	2	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G3		Not Qualified	.33 W	33 pF		10 %	25 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	5
UZMV934	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	80	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY	1	SMALL OUTLINE			125 Cel			R-PDSO-G2		Not Qualified	.33 W	95 pF	HIGH RELIABILITY, LOW LEAKAGE CURRENT		12 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
UZC829BTC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	250	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE						R-PDSO-G3		Not Qualified	.33 W	8.2 pF	LOW NOISE	5 %	25 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	4.3
ZMV932TC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY	1	SMALL OUTLINE			125 Cel			R-PDSO-G2		Not Qualified	.33 W	9.5 pF	LOW NOISE	10.53 %	12 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
UZC833BTC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE					Matte Tin (Sn)	R-PDSO-G3	1	Not Qualified	.33 W	33 pF	LOW NOISE	5 %	25 V	e3	40	260	SILICON	5
ZMV831TA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE			1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G2		Not Qualified	.33 W	15 pF		20 %	25 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	4.5
ZC821AM	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	IN-LINE						R-PSIP-W2		Not Qualified	.3 W	15 pF		10 %					SILICON	4.5
ZC933TC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	150	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY	1	SMALL OUTLINE			125 Cel			R-PDSO-G3		Not Qualified	.33 W	22.5 pF	LOW NOISE	20 %	12 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	3.5
ZC820B	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	CYLINDRICAL						O-PBCY-W2		Not Qualified	.3 W	10 pF		5 %	25 V				SILICON	5
ZC826A	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	CYLINDRICAL						O-PBCY-W2		Not Qualified	.3 W	100 pF		10 %	25 V				SILICON	5
ZC829ATA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	250	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE					MATTE TIN	R-PDSO-G3	1	Not Qualified	.33 W	8.2 pF	LOW NOISE	10 %	25 V	e3			SILICON	4.3
UZC833ATC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE						R-PDSO-G3		Not Qualified	.33 W	33 pF	LOW NOISE	10 %	25 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	5
UZC833BTA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE					Matte Tin (Sn)	R-PDSO-G3	1	Not Qualified	.33 W	33 pF	LOW NOISE	5 %	25 V	e3	40	260	SILICON	5
ZC934TA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	80	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY	1	SMALL OUTLINE	Varactors	12 V			MATTE TIN	R-PDSO-G3	1	Not Qualified	.33 W	52.5 pF	LOW NOISE	23.81 %	12 V	e3	30	260	SILICON	3.8
UZMV832A	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE			1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G2		Not Qualified	.33 W	22 pF			25 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	5
ZC836B	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE					Matte Tin (Sn)	R-PDSO-G3	1	Not Qualified	.33 W	100 pF	LOW NOISE	5 %	25 V	e3	40	260	SILICON	5
UZC833B	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE					Matte Tin (Sn)	R-PDSO-G3	1	Not Qualified	.33 W	33 pF	LOW NOISE	5 %	25 V	e3	40	260	SILICON	5
UZMV830A	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE			1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G2		Not Qualified	.33 W	10 pF			25 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	4.5
UZV832BV2TA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE						R-PDSO-F2		Not Qualified	.25 W	22 pF	LOW NOISE	5 %	25 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	5
ZMV834BTA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	25 V			MATTE TIN	R-PDSO-G2	1	Not Qualified	.33 W	47 pF	LOW NOISE	5 %	25 V	e3	30	260	SILICON	5
ZMV830TA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE			1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G2		Not Qualified	.33 W	10 pF		20 %	25 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	4.5
ZDC834ATA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT	ULTRA HIGH FREQUENCY	2	SMALL OUTLINE	Varactors	25 V			MATTE TIN	R-PDSO-G3	1	Not Qualified	.33 W	47 pF	LOW NOISE	10 %	25 V	e3	30	260	SILICON	5
ZMV829TA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	250	PLASTIC/EPOXY	SINGLE			1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G2		Not Qualified	.33 W	8.2 pF		20 %	25 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	4.3
UZDC834ATC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT		2	SMALL OUTLINE						R-PDSO-G3		Not Qualified	.33 W	47 pF	LOW NOISE	10 %	25 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	5
ZMV832BTC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE	Varactors	25 V			MATTE TIN	R-PDSO-G2	1	Not Qualified	.33 W	22 pF	LOW NOISE	5 %	25 V	e3	30	260	SILICON	5
ZMV833TC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE			1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G2		Not Qualified	.33 W	33 pF		20 %	25 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	5
ZC932TA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY	1	SMALL OUTLINE	Varactors	12 V			MATTE TIN	R-PDSO-G3	1	Not Qualified	.33 W	9.5 pF	LOW NOISE	10.53 %	12 V	e3	30	260	SILICON	3.091
ZC823N	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	IN-LINE					MATTE TIN	R-PSIP-W2		Not Qualified	.3 W	33 pF				e3	NOT SPECIFIED	NOT SPECIFIED	SILICON	5
ZV933V2TC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	150	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE			125 Cel			R-PDSO-F2		Not Qualified	.25 W	22.5 pF	LOW NOISE	20 %	12 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
ZDC834A	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS	HYPERABRUPT	ULTRA HIGH FREQUENCY	2	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G3		Not Qualified	.33 W	47 pF		10 %	25 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	5
ZC824A	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	BOTTOM	WIRE	2	NO	ROUND	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	CYLINDRICAL						O-PBCY-W2		Not Qualified	.3 W	47 pF		10 %	25 V				SILICON	5
FMMV2105	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	400	PLASTIC/EPOXY	SINGLE	ABRUPT		1	SMALL OUTLINE						R-PDSO-G3		Not Qualified	.33 W	15 pF	LOW NOISE	10 %	30 V				SILICON	2.6
UZMV930TA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY	1	SMALL OUTLINE			125 Cel			R-PDSO-G2		Not Qualified	.33 W	4.9 pF	LOW NOISE	12.24 %	12 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
ZMV833TA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE			1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G2		Not Qualified	.33 W	33 pF		20 %	25 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	5
ZC823AM	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	IN-LINE						R-PSIP-W2		Not Qualified	.3 W	33 pF		10 %					SILICON	5
UZMV931TA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY	1	SMALL OUTLINE			125 Cel			R-PDSO-G2		Not Qualified	.33 W	7.15 pF	LOW NOISE	9.09 %	12 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
ZC820AN	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	IN-LINE						R-PSIP-W2		Not Qualified	.3 W	10 pF		10 %					SILICON	4.5
ZC823BN	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	IN-LINE						R-PSIP-W2		Not Qualified	.3 W	33 pF		5 %					SILICON	5
ZC824N	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	IN-LINE						R-PSIP-W2		Not Qualified	.3 W	47 pF							SILICON	5
ZC834B	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE					Matte Tin (Sn)	R-PDSO-G3	1	Not Qualified	.33 W	47 pF	LOW NOISE	5 %	25 V	e3	40	260	SILICON	5
ZC821N	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	300	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	IN-LINE						R-PSIP-W2		Not Qualified	.3 W	15 pF							SILICON	4.5
UZC829B	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	250	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	1	SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-G3		Not Qualified	.33 W	8.2 pF	LOW NOISE	5 %	25 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	4.3
ZC822AN	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	IN-LINE						R-PSIP-W2		Not Qualified	.3 W	22 pF		10 %					SILICON	5
UZV932V2TC	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	SMALL OUTLINE			125 Cel			R-PDSO-F2		Not Qualified	.25 W	9.5 pF	LOW NOISE	10.53 %	12 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
ZC822BN	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	200	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	IN-LINE						R-PSIP-W2		Not Qualified	.3 W	22 pF		5 %					SILICON	5
FMMV2104TA	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	400	PLASTIC/EPOXY	SINGLE	ABRUPT		1	SMALL OUTLINE						R-PDSO-G3		Not Qualified	.33 W	12 pF	LOW NOISE	10 %	30 V				SILICON	2.6
ZC826AM	Diodes Incorporated	VARIABLE CAPACITANCE DIODE	SINGLE	WIRE	2	NO	RECTANGULAR	100	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		1	IN-LINE						R-PSIP-W2		Not Qualified	.3 W	100 pF		10 %					SILICON	5

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.