VARIABLE CAPACITANCE DIODE Varactor Diodes 2,400+

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Case Connection	Qualification	Nominal Diode Capacitance	Additional Features	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
JDV2S01E(TPH3)	Toshiba	VARIABLE CAPACITANCE DIODE				YES											Varactors	10 V							3.15 pF
1SV215TPHR2	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE			125 Cel			R-PDSO-G2		Not Qualified		SMALL TRACKING ERROR, 2.5% MATCHED SETS ARE AVAILABLE		30 V				SILICON	9.5
1SV269(TPH3)	Toshiba	VARIABLE CAPACITANCE DIODE				YES											Varactors	36 V							2.75 pF
1SV261	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE						R-PDSO-G2		Not Qualified								SILICON	5
1SV305,H3F	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	ABRUPT	VERY HIGH FREQUENCY	.003 uA	1	10 V	SMALL OUTLINE		10 V	125 Cel			R-PDSO-F2			18.3 pF		5.46 %	10 V				SILICON	2.8
1SV305,H3F(T	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	ABRUPT	VERY HIGH FREQUENCY	.003 uA	1	10 V	SMALL OUTLINE		10 V	125 Cel			R-PDSO-F2			18.3 pF		5.46 %	10 V				SILICON	2.8
JDV2S13FS	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	10 V	150 Cel		TIN LEAD	R-PDSO-F2		Not Qualified	6.2 pF		8.06 %		e0			SILICON	2.7
JDV3S26CT	Toshiba	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	3	YES	RECTANGULAR		CERAMIC, METAL-SEALED COFIRED	SINGLE		ULTRA HIGH FREQUENCY		1		CHIP CARRIER	Varactors	10 V	150 Cel			R-CBCC-N3	CATHODE	Not Qualified	15.8 pF		3.03 %					SILICON	2.82
1SV245TPH3	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE	Varactors	35 V	125 Cel			R-PDSO-G2		Not Qualified		6% MATCHED SETS ARE AVAILABLE, SMALL TRACKING ERROR		30 V				SILICON	5
1SV217TPH2	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE			125 Cel			R-PDSO-G2		Not Qualified	36 pF	SMALL TRACKING ERROR, 2.5% MATCHED SETS ARE AVAILABLE		30 V				SILICON	11.5
1SV231	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE			.01 uA	1	28 V	SMALL OUTLINE	Varactors	35 V	125 Cel		Tin/Lead (Sn/Pb)	R-PDSO-G2		Not Qualified	45 pF	2.5% MATCHED GROUP AVAILABLE, SMALL TRACKING ERROR	9.39 %	30 V	e0			SILICON	14
1SV228-6TPH4	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			.01 uA	2	15 V	SMALL OUTLINE			125 Cel			R-PDSO-G3		Not Qualified		3% MATCHED SETS ARE AVAILABLE		15 V		NOT SPECIFIED	240	SILICON	2.1
ISV255	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY							SMALL OUTLINE						R-PDSO-G2		Not Qualified	26 pF			30 V				SILICON
1SV304(T3PIC,F)	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	ABRUPT	VERY HIGH FREQUENCY		1		SMALL OUTLINE			125 Cel			R-PDSO-G2			18.3 pF		5.46 %	10 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	2.8
HN1V02H-A	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	8	YES	RECTANGULAR	200	PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS			.02 uA	2	16 V	SMALL OUTLINE	Other Diodes	16 V	125 Cel	-55 Cel		R-PDSO-G8		Not Qualified		CAPACITANCE MATCHED TO 2.5% FOR TWO DEVICES	8.72 %	16 V		NOT SPECIFIED	240	SILICON	16.2
1SV254	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE						R-PDSO-G2		Not Qualified	15 pF							SILICON	5.9
ISV149	Toshiba	VARIABLE CAPACITANCE DIODE	SINGLE	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY							IN-LINE						R-PSIP-T2		Not Qualified	435 pF			15 V		NOT SPECIFIED	240	SILICON
JDV2S16FS	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	10 V	150 Cel		TIN LEAD	R-PDSO-F2		Not Qualified	3.59 pF		5.85 %		e0			SILICON	1.9
HN9V01H	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	8	YES	RECTANGULAR		PLASTIC/EPOXY							SMALL OUTLINE						R-PDSO-G8		Not Qualified								SILICON
HN2V02H	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	8	YES	RECTANGULAR	200	PLASTIC/EPOXY	SEPARATE, 3 ELEMENTS			.00000002 uA	3	16 V	SMALL OUTLINE	Other Diodes	16 V	125 Cel	-55 Cel	Tin/Lead (Sn/Pb)	R-PDSO-G8		Not Qualified		CAPACITANCE MATCHED TO 2.5% FOR THREE DEVICES	10.77 %	16 V	e0			SILICON	16.2
JDV2S07S	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	10 V			Tin/Lead (Sn/Pb)	R-PDSO-F2		Not Qualified	4.5 pF		10.11 %		e0			SILICON	2
1SV216TPHR2	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE			125 Cel			R-PDSO-G2		Not Qualified				30 V				SILICON	2.5
1SV284(TPH3,F,T)	Toshiba	VARIABLE CAPACITANCE DIODE				YES					ABRUPT					SMALL OUTLINE	Varactors	10 V
1SV310	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	10 V	125 Cel			R-PDSO-G2		Not Qualified	10.4 pF		6.73 %			NOT SPECIFIED	NOT SPECIFIED	SILICON	1.8
1SV242	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS		VERY HIGH FREQUENCY	.01 uA	2	28 V	SMALL OUTLINE	Varactors	35 V	125 Cel		TIN LEAD	R-PDSO-G3		Not Qualified	39 pF	2.5% MATCHED GROUP AVAILABLE, SMALL TRACKING ERROR	7.69 %	30 V	e0			SILICON	13.4
1SV228-4TPH7	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			.01 uA	2	15 V	SMALL OUTLINE			125 Cel			R-PDSO-G3		Not Qualified		3% MATCHED SETS ARE AVAILABLE		15 V		NOT SPECIFIED	240	SILICON	2.1
1SV214TPHR4	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE			125 Cel			R-PDSO-G2		Not Qualified		SMALL TRACKING ERROR, 2.5% MATCHED SETS ARE AVAILABLE		30 V				SILICON	5.9
1SV238TPHR3	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE			125 Cel			R-PDSO-G2		Not Qualified	35 pF	SMALL TRACKING ERROR, 2.5% MATCHED SETS ARE AVAILABLE		30 V				SILICON	10.7
1SV304(TPH3)	Toshiba	VARIABLE CAPACITANCE DIODE				YES											Varactors	10 V							19.3 pF
JDV2S10FS	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	10 V	150 Cel			R-PDSO-F2		Not Qualified	7.85 pF		7.01 %			NOT SPECIFIED	NOT SPECIFIED	SILICON	2.4
1SV228-2TPHR4	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			.01 uA	2	15 V	SMALL OUTLINE			125 Cel			R-PDSO-G3		Not Qualified		3% MATCHED SETS ARE AVAILABLE		15 V		NOT SPECIFIED	240	SILICON	2.1
1SV215	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE			.01 uA	1	28 V	SMALL OUTLINE	Varactors	35 V	125 Cel		Tin/Lead (Sn/Pb)	R-PDSO-G2		Not Qualified	29 pF	2.5% MATCHED GROUP AVAILABLE, SMALL TRACKING ERROR	10.34 %	30 V	e0			SILICON	9.5
1SV309(TPH2)	Toshiba	VARIABLE CAPACITANCE DIODE				YES											Varactors	35 V
JDH2S04FS	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			125 Cel			R-PDSO-F2			.4 pF			10 V				SILICON
ISV261	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY							SMALL OUTLINE						R-PDSO-G2		Not Qualified	3.31 pF			30 V				SILICON
1SV160TPHR2	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE			.1 uA	1	4 V	SMALL OUTLINE			125 Cel			R-PDSO-G3		Not Qualified				15 V				SILICON	1.2
1SV230TPHR2	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE			125 Cel			R-PDSO-G2		Not Qualified	15 pF			30 V				SILICON	7.1
1SV325(TPH3)	Toshiba	VARIABLE CAPACITANCE DIODE				YES											Varactors	10 V
ISV211	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	THROUGH-HOLE	2	NO	RECTANGULAR		PLASTIC/EPOXY							IN-LINE						R-PDIP-T2		Not Qualified	33 pF			30 V				SILICON
1SV228-6TPHR3	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			.01 uA	2	15 V	SMALL OUTLINE			125 Cel			R-PDSO-G3		Not Qualified		3% MATCHED SETS ARE AVAILABLE		15 V		NOT SPECIFIED	240	SILICON	2.1
1SV216TPHR3	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE			125 Cel			R-PDSO-G2		Not Qualified				30 V				SILICON	2.5
ISV245	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY							SMALL OUTLINE					TIN LEAD	R-PDSO-G2		Not Qualified	3.31 pF			30 V	e0			SILICON
1SV216TPH3	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.00000001 uA	1	28 V	SMALL OUTLINE	Varactors	35 V	125 Cel			R-PDSO-G2		Not Qualified				30 V				SILICON	2.5
JDV2S17S	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	10 V	150 Cel		TIN LEAD	R-PDSO-F2		Not Qualified	1.89 pF		6.35 %		e0			SILICON	2
1SV229TPHR2	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.003 uA	1	15 V	SMALL OUTLINE			125 Cel			R-PDSO-G2		Not Qualified	15 pF			15 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	2
1SV228-3TPHR7	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR		PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			.01 uA	2	15 V	SMALL OUTLINE			125 Cel			R-PDSO-G3		Not Qualified		3% MATCHED SETS ARE AVAILABLE		15 V		NOT SPECIFIED	240	SILICON	2.1
HN1V02H	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	8	YES	RECTANGULAR	200	PLASTIC/EPOXY	SEPARATE, 2 ELEMENTS			.00000002 uA	2	16 V	SMALL OUTLINE	Other Diodes	16 V	125 Cel	-55 Cel		R-PDSO-G8		Not Qualified		CAPACITANCE MATCHED TO 2.5% FOR TWO DEVICES	10.77 %	16 V		NOT SPECIFIED	240	SILICON	16.2
JDV2S09S	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		UNSPECIFIED	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	10 V	150 Cel		TIN LEAD	R-XDSO-F2		Not Qualified			6.73 %	10 V	e0			SILICON	1.8

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.