VARIABLE CAPACITANCE DIODE Varactor Diodes 2,400+

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Case Connection	Qualification	Nominal Diode Capacitance	Additional Features	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
1SV228-4TPHR6	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			.01 uA	2	15 V	SMALL OUTLINE			125 Cel			R-PDSO-G3		Not Qualified		3% MATCHED SETS ARE AVAILABLE		15 V		NOT SPECIFIED	240	SILICON	2.1
1SV230TPH3	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE			125 Cel			R-PDSO-G2		Not Qualified	15 pF			30 V				SILICON	7.1
1SV324	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	10 V	125 Cel			R-PDSO-G2		Not Qualified	46.75 pF		5.88 %			NOT SPECIFIED	NOT SPECIFIED	SILICON	4
JDV3S29CT	Toshiba	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	3	YES	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	SINGLE		ULTRA HIGH FREQUENCY		1		CHIP CARRIER	Varactors	10 V	150 Cel			R-CBCC-N3	CATHODE	Not Qualified	3.73 pF		3.75 %					SILICON	2.73
1SV228-5TPH3	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			.01 uA	2	15 V	SMALL OUTLINE			125 Cel			R-PDSO-G3		Not Qualified		3% MATCHED SETS ARE AVAILABLE		15 V		NOT SPECIFIED	240	SILICON	2.1
1SV284	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.003 uA	1	10 V	SMALL OUTLINE	Varactors	10 V	125 Cel		Tin/Lead (Sn/Pb)	R-PDSO-F2		Not Qualified	16 pF		6.25 %	10 V	e0			SILICON	1.8
1SV230TPHR4	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE			125 Cel			R-PDSO-G2		Not Qualified	15 pF			30 V				SILICON	7.1
S3028	Toshiba	VARIABLE CAPACITANCE DIODE	END	NO LEAD	2	YES	ROUND	UNSPECIFIED	SINGLE	ABRUPT	MILLIMETER WAVE BAND		1		MICROWAVE	Varactors	50 V	150 Cel	-65 Cel		O-XEMW-N2		Not Qualified	1.95 pF		12.82 %	50 V				SILICON
1SV228-3TPHR3	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			.01 uA	2	15 V	SMALL OUTLINE			125 Cel			R-PDSO-G3		Not Qualified		3% MATCHED SETS ARE AVAILABLE		15 V		NOT SPECIFIED	240	SILICON	2.1
1SV229TPH3	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.000000003 uA	1	15 V	SMALL OUTLINE	Varactors	15 V	125 Cel			R-PDSO-G2		Not Qualified	15 pF			15 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	2
1SV239TPHR4	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.003 uA	1	15 V	SMALL OUTLINE			125 Cel			R-PDSO-G2		Not Qualified	4.25 pF			15 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	2
1SV228-4TPHR4	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			.01 uA	2	15 V	SMALL OUTLINE			125 Cel			R-PDSO-G3		Not Qualified		3% MATCHED SETS ARE AVAILABLE		15 V		NOT SPECIFIED	240	SILICON	2.1
ISV231	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY							SMALL OUTLINE					TIN LEAD	R-PDSO-G2		Not Qualified	41 pF			30 V	e0			SILICON
1SV305	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY	.003 uA	1	10 V	SMALL OUTLINE	Varactors	10 V	125 Cel		Tin/Lead (Sn/Pb)	R-PDSO-F2		Not Qualified	18.3 pF		5.46 %	10 V	e0	NOT SPECIFIED	NOT SPECIFIED	SILICON	2.8
1SV238TPH2	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE			125 Cel			R-PDSO-G2		Not Qualified	35 pF	SMALL TRACKING ERROR, 2.5% MATCHED SETS ARE AVAILABLE		30 V				SILICON	10.7
ISV258	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY							SMALL OUTLINE						R-PDSO-G2		Not Qualified	15 pF			30 V				SILICON
1SV228-5	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		SMALL OUTLINE			125 Cel			R-PDSO-G3		Not Qualified	38.84 pF	CAPACITANCE MATCHED TO 3%	1 %					SILICON	2.1
1SV290(TPH3)	Toshiba	VARIABLE CAPACITANCE DIODE				YES										Varactors	35 V
1SV228-4TPHR2	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			.01 uA	2	15 V	SMALL OUTLINE			125 Cel			R-PDSO-G3		Not Qualified		3% MATCHED SETS ARE AVAILABLE		15 V		NOT SPECIFIED	240	SILICON	2.1
JDV2S13S	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel		TIN LEAD	R-PDSO-F2		Not Qualified	6.2 pF		8.06 %		e0			SILICON	2.7
1SV228-3	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		SMALL OUTLINE			125 Cel			R-PDSO-G3		Not Qualified	36.99 pF	CAPACITANCE MATCHED TO 3%	1 %					SILICON	2.1
1SV228-4TPH3	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			.01 uA	2	15 V	SMALL OUTLINE			125 Cel			R-PDSO-G3		Not Qualified		3% MATCHED SETS ARE AVAILABLE		15 V		NOT SPECIFIED	240	SILICON	2.1
1SV228-2TPH7	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			.01 uA	2	15 V	SMALL OUTLINE			125 Cel			R-PDSO-G3		Not Qualified		3% MATCHED SETS ARE AVAILABLE		15 V		NOT SPECIFIED	240	SILICON	2.1
1SV245TPH2	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE			125 Cel			R-PDSO-G2		Not Qualified		6% MATCHED SETS ARE AVAILABLE, SMALL TRACKING ERROR		30 V				SILICON	5
1SV101	Toshiba	VARIABLE CAPACITANCE DIODE	SINGLE	THROUGH-HOLE	2	NO	RECTANGULAR	PLASTIC/EPOXY	SINGLE			.00000001 uA	1	15 V	IN-LINE	Varactors	15 V	125 Cel		Tin/Lead (Sn/Pb)	R-PSIP-T2		Not Qualified	30 pF	CAPACITANCE MATCHED TO 3%		15 V	e0			SILICON	2
1SV239TPH3	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.003 uA	1	15 V	SMALL OUTLINE	Varactors	15 V	125 Cel			R-PDSO-G2		Not Qualified	4.25 pF			15 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	2
1SV239TPH4	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.003 uA	1	15 V	SMALL OUTLINE			125 Cel			R-PDSO-G2		Not Qualified	4.25 pF			15 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	2
1SV225TPHR6	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			.05 uA	2	30 V	SMALL OUTLINE			125 Cel			R-PDSO-G3		Not Qualified	19.7 pF			32 V				SILICON	2.6
1SV280TH3,F	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ABRUPT	ULTRA HIGH FREQUENCY	.003 uA	1	15 V	SMALL OUTLINE		15 V	125 Cel			R-PDSO-F2			4.25 pF		10.59 %	15 V				SILICON	2
ISV161	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	THROUGH-HOLE	2	NO	RECTANGULAR	PLASTIC/EPOXY							IN-LINE						R-PDIP-T2		Not Qualified	26 pF			30 V				SILICON
1SV314(TPH3,F)	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ABRUPT	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	10 V	125 Cel			R-PDSO-F2			7.85 pF		7.01 %					SILICON	2.4
1SV245TPHR3	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE			125 Cel			R-PDSO-G2		Not Qualified		6% MATCHED SETS ARE AVAILABLE, SMALL TRACKING ERROR		30 V				SILICON	5
JDV2S09FS(TL3ALPS3	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ABRUPT	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel			R-PDSO-F2			10.4 pF		6.73 %	10 V				SILICON	1.8
ISV153	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	THROUGH-HOLE	2	NO	RECTANGULAR	PLASTIC/EPOXY							IN-LINE						R-PDIP-T2		Not Qualified	14.16 pF			30 V				SILICON
1SV239(TPH3,F)	Toshiba	VARIABLE CAPACITANCE DIODE				YES				ABRUPT					SMALL OUTLINE	Varactors	15 V							4.7 pF
1SV232(TH3MAT-PAF)	Toshiba	VARIABLE CAPACITANCE DIODE
1SV103	Toshiba	VARIABLE CAPACITANCE DIODE	SINGLE	THROUGH-HOLE	3	NO	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		IN-LINE			125 Cel			R-PSIP-T3		Not Qualified						NOT SPECIFIED	240	SILICON	2.6
JDV2S16S	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	10 V	150 Cel		TIN LEAD	R-PDSO-F2		Not Qualified	3.59 pF		5.85 %		e0			SILICON	1.9
1SV242TPH2	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS		VERY HIGH FREQUENCY	.00000001 uA	2	28 V	SMALL OUTLINE	Varactors	35 V	125 Cel		Tin/Lead (Sn/Pb)	R-PDSO-G3		Not Qualified	39 pF	SMALL TRACKING ERROR, 2.5% MATCHED SETS ARE AVAILABLE		30 V	e0			SILICON	13.4
1SV283	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE			125 Cel		TIN LEAD	R-PDSO-F2		Not Qualified	31.5 pF	SMALL TRACKING ERROR, CAPACITANCE MATCHED TO 2%	7.94 %	34 V	e0			SILICON	11
1SV293(TPH3)	Toshiba	VARIABLE CAPACITANCE DIODE				YES										Varactors	10 V							20 pF
1SV228-2TPHR6	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			.01 uA	2	15 V	SMALL OUTLINE			125 Cel			R-PDSO-G3		Not Qualified		3% MATCHED SETS ARE AVAILABLE		15 V		NOT SPECIFIED	240	SILICON	2.1
1SV302(TPH3)	Toshiba	VARIABLE CAPACITANCE DIODE				YES										Varactors	35 V							51 pF
1SV225TPH3	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS			.05 uA	2	30 V	SMALL OUTLINE			125 Cel			R-PDSO-G3		Not Qualified	19.7 pF			32 V				SILICON	2.6
1SV231TPH3	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY	.01 uA	1	28 V	SMALL OUTLINE			125 Cel			R-PDSO-G2		Not Qualified	45 pF	SMALL TRACKING ERROR, 2.5% MATCHED SETS ARE AVAILABLE		30 V				SILICON	14
1SV331(TPH3F)	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ABRUPT	ULTRA HIGH FREQUENCY	.003 uA	1	10 V	SMALL OUTLINE		10 V	125 Cel			R-PDSO-F2			18 pF		5.56 %	10 V				SILICON	3.5
1SV228-2	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	COMMON CATHODE, 2 ELEMENTS				2		SMALL OUTLINE			125 Cel			R-PDSO-G3		Not Qualified	36.09 pF	CAPACITANCE MATCHED TO 3%	1 %					SILICON	2.1
1SV160TPH6	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	3	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE			.1 uA	1	4 V	SMALL OUTLINE			125 Cel			R-PDSO-G3		Not Qualified				15 V				SILICON	1.2

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.