Toshiba - 1SV101

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

1N4795 by Onsemi is a varactor diode with 39pF nominal capacitance, abrupt variable capacitance classification, and 22V breakdown voltage. It is used in RF applications for tuning circuits due to its high quality factor of 15 and low reverse current of 0.005uA.

The NXP Semiconductors BBY40,235 is a varactor diode with a max operating temperature of 125°C and min of -55°C. It has a nominal capacitance of 29 pF, breakdown voltage of 30V, and operates in the very high frequency band. This single-config diode is ideal for applications requiring variable capacitance in small outline packages.

Toshiba's 1SV285 Varactor Diode is a single-config, ultra-high frequency diode with a capacitance ratio of 2 and nominal capacitance of 4.45 pF. Ideal for applications requiring variable capacitance, such as in RF tuning circuits for small outline packages operating up to 125°C.

NXP Semiconductors' BB135,115 is a varactor diode with a capacitance ratio of 8.9 and nominal capacitance of 19.25 pF, ideal for ultra-high frequency applications. It operates b/w -55 to 125 °C with a reverse voltage of 30 V, in a small outline package suitable for surface mount assembly.

VARIABLE CAPACITANCE DIODE; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3; Terminal Finish: TIN;

Varactors;

BB119-AMMOPAK by NXP Semiconductors is a variable capacitance diode ideal for RF applications. It features a max reverse current of 2 µA, operates up to 200 °C, and has a reverse test voltage of 15 V. Its isolated case connection ensures reliable performance in various circuits.

1N5470 by Onsemi is a Varactor Diode with a Min Quality Factor of 500, Nominal Capacitance of 33pF, and Max Reverse Current of 0.00000002uA. It is used in RF applications for frequency tuning due to its ABRUPT Variable Capacitance Diode Classification.

SVC203SPA by Onsemi is a Varactor Diode with 2 elements, common cathode config, and min quality factor of 60. It has a diode capacitance ratio of 2.1924, breakdown voltage of 16V, and max power dissipation of 0.1W. Ideal for applications requiring variable capacitance diodes in plastic/epoxy package style with through-hole terminals.

The Onsemi SVC384T is a Varactor Diode with 2 elements, common cathode config, and 33V breakdown voltage. It has a min quality factor of 200 and operates up to 125 °C. Ideal for applications requiring variable capacitance diodes in electronic circuits.

MV2101 by Onsemi is a single varactor diode with a min quality factor of 450, ideal for high frequency to ultra high frequency applications. It has a nominal capacitance of 6.8 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems. With a breakdown voltage of 30 V and abrupt variable capacitance classification, this through-hole diode offers precise tuning capabilities in cylindrical package style.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

LV2209 by Onsemi is a varactor diode with a min quality factor of 200 and nominal capacitance of 33 pF. It has a breakdown voltage of 25 V, making it suitable for RF tuning applications. With a max power dissipation of 0.28 W, this single-config diode in cylindrical package is ideal for high-frequency circuits.

VARIABLE CAPACITANCE DIODE; Surface Mount: NO; Nominal Diode Capacitance: 100 pF; Maximum Repetitive Peak Reverse Voltage: 30 V; Minimum Quality Factor: 100;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BB172X by NXP Semiconductors is a single, surface-mount varactor diode ideal for very high frequency applications. It features a nominal capacitance of 38.5 pF, operates b/w -55 °C to 125 °C, and has a max reverse voltage of 32 V. Perfect for tuning circuits and RF applications.

LV2209RLRM by Onsemi is a varactor diode with a min quality factor of 200 and nominal capacitance of 33 pF. It operates at a max temperature of 150 °C, making it suitable for RF tuning applications in various electronic devices. With a breakdown voltage of 25V and power dissipation of 0.28W, it offers reliable performance in signal modulation circuits.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 16 pF; Maximum Repetitive Peak Reverse Voltage: 10 V;