NXP Semiconductors - 934057928215

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934057928215 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number 934057928215
Description VARIABLE CAPACITANCE DIODE;
Datasheet 934057928215 Datasheet
In Stock1,887
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MMVL105GT1 by Onsemi

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934056920115 by NXP Semiconductors

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VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
GCX1204-23-0 by Microchip Technology

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VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 1.8 pF; Minimum Quality Factor: 3000; Maximum Repetitive Peak Reverse Voltage: 30 V;
1N4795 by Onsemi

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1N4795 by Onsemi is a varactor diode with 39pF nominal capacitance, abrupt variable capacitance classification, and 22V breakdown voltage. It is used in RF applications for tuning circuits due to its high quality factor of 15 and low reverse current of 0.005uA.
933202800115 by NXP Semiconductors

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VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BBY62TRL by NXP Semiconductors

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BBY62TRL by NXP Semiconductors is a variable capacitance diode designed for ultra-high frequency applications. It features a nominal capacitance of 17.5 pF, a min capacitance ratio of 9.7, and comes in a compact surface mount package with 4 terminals. Ideal for tuning circuits and RF applications, it ensures efficient performance in small electronic devices.
BB145 by NXP Semiconductors

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VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SMV2019-079LF by Skyworks Solutions

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SMV2019-079LF by Skyworks Solutions is a single hyperabrupt varactor diode with 0.8 pF capacitance, 22 V breakdown voltage, and 500 min quality factor. Ideal for RF applications due to its small outline package and high capacitance ratio. Surface mount design with matte tin finish makes it suitable for compact electronic devices.
1N4792 by Onsemi

1N4792

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1N4792 by Onsemi is a varactor diode with 22pF capacitance, 20V breakdown voltage, and 0.5W power dissipation. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 °C to 150°C.
1N4804 by Onsemi

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1N4804 by Onsemi is a varactor diode with a min quality factor of 15 and max reverse current of 0.000000005 uA. It has a nominal capacitance of 12 pF, making it ideal for applications requiring variable capacitance diodes in circuits operating b/w -65 to 150 °C.
MDX591D by Texas Instruments

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VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 20; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .45 pF;
1N4805 by Onsemi

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1N4805 by Onsemi is a varactor diode with 15 pF nominal capacitance, 110 V breakdown voltage, and 0.000000005 uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 to 150 °C.
MMBV809LT3 by Onsemi

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MMBV809LT3 by Onsemi is a single hyperabrupt varactor diode with a min quality factor of 75, ideal for ultra high frequency applications. With a nominal capacitance of 5.3 pF and a breakdown voltage of 20 V, this small outline diode in a rectangular package is suitable for surface mount designs requiring precise tuning capabilities.
BB133-T by NXP Semiconductors

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VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
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BB219TRL by NXP Semiconductors

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BB219TRL by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a min capacitance ratio of 12, comes in a round glass package, and supports surface mount technology. Ideal for RF tuning and voltage-controlled oscillators.
BB804-0 by NXP Semiconductors

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BB804-0 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.02 µA and operates at up to 100 °C, making it ideal for RF tuning circuits. Its compact surface mount design ensures efficient space utilization in electronic devices.
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VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
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VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 16 V; Nominal Diode Capacitance: 50 pF; Minimum Quality Factor: 200;