NXP Semiconductors - BB199,115

1N4803 by Onsemi is a varactor diode with a min quality factor of 15, max reverse current of 0.000000005 uA, and nominal capacitance of 10 pF. It is used in applications requiring variable capacitance diodes for tuning circuits at temperatures ranging from -65 to 150 °C.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 18.22 pF; Terminal Finish: TIN; JESD-609 Code: e3; Maximum Repetitive Peak Reverse Voltage: 35 V;

Varactors;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

TIV24 by Texas Instruments is a single varactor diode with a min quality factor of 80, ideal for very high frequency applications. Featuring a nominal capacitance of 28 pF and max power dissipation of 0.25 W, it offers a breakdown voltage of 30 V. The diode's silicon element material and variable capacitance make it suitable for RF tuning circuits in communication systems.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Peak Reflow Temperature (C): 260; Terminal Finish: TIN BISMUTH; Diode Element Material: SILICON; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e6;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

1N5703 by Onsemi is a varactor diode with 27pF nominal capacitance, abrupt variable capacitance classification, and 65V breakdown voltage. It is used in RF applications for tuning circuits due to its high quality factor of 350 and low reverse current of 0.00000002uA.

1N4805 by Onsemi is a varactor diode with 15 pF nominal capacitance, 110 V breakdown voltage, and 0.000000005 uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 to 150 °C.

Varactors;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

Infineon's BB545E7904HTSA1 is a single varactor diode with 20pF capacitance, ideal for ultra high frequency applications. With a temperature range of -55 to 150°C, it features gull wing terminals and silicon element material. This surface mount diode has a small outline package shape and is suitable for RF tuning in various electronic devices.

1N5450 by Onsemi is a varactor diode with a min quality factor of 350, max reverse current of 0.02 uA, and nominal capacitance of 33 pF. It is used in applications requiring variable capacitance diodes for tuning circuits due to its abrupt variable capacitance classification.

1N5446ARL by Onsemi is a varactor diode with a min quality factor of 350, nominal capacitance of 18 pF, and breakdown voltage of 30 V. It is ideal for ultra high frequency applications requiring abrupt variable capacitance diodes in isolated axial package style.

MMBV2101LT1 by Onsemi is a varactor diode with a min quality factor of 450, suitable for high frequency to ultra high frequency applications. It has a nominal capacitance of 6.8 pF and a max power dissipation of 0.225 W, making it ideal for RF circuit designs requiring precise tuning capabilities. The diode's abrupt variable capacitance classification and dual terminal position offer flexibility in various small outline package styles for surface mount applications.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MC209RLRA by Onsemi is a single varactor diode with 29pF capacitance, 30V breakdown voltage, and 0.2W power dissipation. Ideal for very high frequency applications due to its variable capacitance nature and cylindrical package style.