Onsemi - MV2108

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

1N5474 by Onsemi is a varactor diode with 68pF capacitance, 30V breakdown voltage, and 0.00000002uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 °C to 175°C.

VARIABLE CAPACITANCE DIODE; Surface Mount: NO; Nominal Diode Capacitance: 460 pF; Maximum Repetitive Peak Reverse Voltage: 15 V; Minimum Quality Factor: 150;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BB204G-TAPE-REEL by NXP Semiconductors is a variable capacitance diode ideal for RF tuning applications. It features a common cathode configuration with 2 elements, and a min capacitance ratio of 2.5. This cylindrical, through-hole component ensures reliable performance in electronic circuits.

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

MMVL229AT1 by Onsemi is a varactor diode with 15 pF nominal capacitance, 15 V peak reverse voltage, and 6.67% capacitance tolerance. It is designed for ultra high frequency applications in small outline packages with gull wing terminals, suitable for surface mount configurations.

MV1628 by Onsemi is a single varactor diode with glass package, 15 pF nominal capacitance, and 20 V breakdown voltage. It is ideal for RF tuning applications due to its variable capacitance feature and high diode capacitance ratio of 2.

The NXP Semiconductors BB148 is a varactor diode with a max reverse current of 0.01 uA and nominal capacitance of 39.3 pF. It operates in the very high frequency to ultra high frequency band, making it suitable for applications requiring variable capacitance diodes in small outline packages. With a min operating temperature of -55 °C and max of 125 °C, it offers reliable performance across a wide temperature range.

TIV25 by Texas Instruments is a single varactor diode with 28pF capacitance, 30V breakdown voltage, and 80 min quality factor. Ideal for very high frequency applications due to its isolated case connection, 0.25W power dissipation, and silicon diode element material.

MMVL105GT1 by Onsemi is a varactor diode with 2.15pF nominal capacitance, 30V breakdown voltage, and 0.2W power dissipation. It is ideal for RF applications due to its variable capacitance nature and small outline package style. The diode's gull wing terminal form and tin/lead finish make it suitable for surface mount designs in electronic circuits.

TIV24 by Texas Instruments is a single varactor diode with a min quality factor of 80, ideal for very high frequency applications. Featuring a nominal capacitance of 28 pF and max power dissipation of 0.25 W, it offers a breakdown voltage of 30 V. The diode's silicon element material and variable capacitance make it suitable for RF tuning circuits in communication systems.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 3000; Maximum Repetitive Peak Reverse Voltage: 15 V; Nominal Diode Capacitance: 1.1 pF;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 16 V; Minimum Quality Factor: 200; Nominal Diode Capacitance: 55 pF;

The Onsemi SVC354 is a Varactor Diode with 52pF nominal capacitance, 16V breakdown voltage, and 200 min quality factor. It is used in applications requiring variable capacitance diodes for RF tuning circuits.

BBY42TRL13 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a min capacitance ratio of 12, comes in a small outline package with 3 terminals, and utilizes silicon as the diode element material. Ideal for RF tuning and voltage-controlled oscillators, it offers reliable performance in compact designs.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .225 pF; Minimum Quality Factor: 25;