Texas Instruments - MDX585C

  1. Home
  2. Texas Instruments - MDX585C
MDX585C by Texas Instruments

Image shown is a representation only.

Manufacturer Texas Instruments
Manufacturer's Part Number MDX585C
Description VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .225 pF; Minimum Quality Factor: 10;
In Stock1,256
NAME DESCRIPTION
Minimum Quality Factor: 10
Diode Type: VARIABLE CAPACITANCE DIODE
Maximum Repetitive Peak Reverse Voltage: 6 V
Sub-Category: Varactors
Surface Mount: YES
Nominal Diode Capacitance: .225 pF
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,256 - -

Popular Products

Category Top Products

1N4786 by Onsemi

1N4786

Onsemi

1N4786 by Onsemi is a Varactor Diode with 15 min Quality Factor, 6.8 pF Nominal Capacitance, and -65 to 150 °C Operating Temp. Ideal for RF tuning circuits in communication devices due to its abrupt Variable Capacitance classification.
MDX594C by Texas Instruments

MDX594C

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 5; Nominal Diode Capacitance: .8 pF; Maximum Repetitive Peak Reverse Voltage: 6 V;
MA46H202-1056 by M/a-com Technology Solutions

MA46H202-1056

M/a-com Technology Solutions

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
934033290135 by NXP Semiconductors

934033290135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SVC201SPA by Onsemi

SVC201SPA

Onsemi

SVC201SPA by Onsemi is a single hyperabrupt varactor diode with 28.19 pF nominal capacitance and 16 V breakdown voltage. It is used in applications requiring variable capacitance diodes, featuring a through-hole terminal form and silicon diode element material.
1SV285(TPH3,F) by Toshiba

1SV285(TPH3,F)

Toshiba

The Toshiba 1SV285(TPH3,F) is a Varactor Diode with 4.5 pF capacitance, 10 V peak reverse voltage, and abrupt classification. It is a surface-mount diode in small outline package suitable for RF tuning applications.
1SV228 by Toshiba

1SV228

Toshiba

The Toshiba 1SV228 is a Varactor Diode with common cathode configuration, suitable for surface mount applications. It features a max reverse voltage of 15V, diode capacitance ratio of 2.1, and operates up to 125°C. Ideal for electronic circuits requiring variable capacitance and high breakdown voltage.
BB119113 by NXP Semiconductors

BB119113

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
SMV1220-079LF by Skyworks Solutions

SMV1220-079LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Diode Element Material: SILICON;
BB174X by NXP Semiconductors

BB174X

NXP Semiconductors

The NXP Semiconductors BB174X is a surface-mount varactor diode with a max repetitive peak reverse voltage of 30V. It features a peak reflow temperature of 260°C and can withstand up to 30s at peak reflow temperature. This variable capacitance diode is commonly used in RF applications for frequency tuning.
SVC236-TB-E by Sanyo Semiconductor

SVC236-TB-E

Sanyo Semiconductor

VARIABLE CAPACITANCE DIODE; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN BISMUTH; JESD-609 Code: e6; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30;
934056828315 by NXP Semiconductors

934056828315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SVC354T by Onsemi

SVC354T

Onsemi

The Onsemi SVC354T is a Varactor Diode with a Min Quality Factor of 200, Breakdown Voltage of 16V, and Capacitance Ratio of 17.5. It is used in RF applications for frequency tuning due to its Variable Capacitance property and small outline package style.
BB189,335 by NXP Semiconductors

BB189,335

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 32 V; Nominal Diode Capacitance: 14.95 pF;
MDX599M by Texas Instruments

MDX599M

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .8 pF; Minimum Quality Factor: 30; Maximum Repetitive Peak Reverse Voltage: 6 V;
BB249 by NXP Semiconductors

BB249

NXP Semiconductors

BB249 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, a reverse test voltage of 28 V, and operates up to 100 °C. Ideal for RF tuning circuits, it ensures reliable performance in compact designs.
BB130 by NXP Semiconductors

BB130

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BB240 by NXP Semiconductors

BB240

NXP Semiconductors

BB240 by NXP Semiconductors is a variable capacitance diode ideal for VHF to UHF applications. It features a max reverse current of 0.01 µA, operates up to 100 °C, and has a breakdown voltage of 32 V. This glass-packaged component is perfect for tuning circuits.
MDX584D by Texas Instruments

MDX584D

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Minimum Quality Factor: 45; Nominal Diode Capacitance: .1 pF;
BB204G-TAPE-REEL by NXP Semiconductors

BB204G-TAPE-REEL

NXP Semiconductors

BB204G-TAPE-REEL by NXP Semiconductors is a variable capacitance diode ideal for RF tuning applications. It features a common cathode configuration with 2 elements, and a min capacitance ratio of 2.5. This cylindrical, through-hole component ensures reliable performance in electronic circuits.