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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | JDV3S29CT |
| Description | VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR; |
| Datasheet | JDV3S29CT Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | CERAMIC, METAL-SEALED COFIRED |
| Config: | SINGLE |
| Diode Type: | VARIABLE CAPACITANCE DIODE |
| Frequency Band: | ULTRA HIGH FREQUENCY |
| Maximum Repetitive Peak Reverse Voltage: | 10 V |
| Diode Cap Tolerance: | 3.75 % |
| Sub-Category: | Varactors |
| Surface Mount: | YES |
| Nominal Diode Capacitance: | 3.73 pF |
| Diode Element Material: | SILICON |
| No. of Terminals: | 3 |
| Minimum Diode Capacitance Ratio: | 2.73 |
| Qualification: | Not Qualified |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CHIP CARRIER |
| JESD-30 Code: | R-CBCC-N3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | CATHODE |
