Toshiba - 1SV228-2

The NXP 934042930115 is a variable capacitance diode ideal for RF tuning applications. It features a max reverse current of 0.01 µA, operates b/w -55 °C to 125 °C, and has a breakdown voltage of 10 V. Its compact design ensures efficient surface mount integration.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

TE Connectivity's MA45439-287T is a single varactor diode with 8.2 pF nominal capacitance, suitable for high to ultra-high frequency applications. It features a min quality factor of 1500 and a breakdown voltage of 30 V, making it ideal for high-performance RF circuits. The diode's abrupt variable capacitance classification and gull wing terminal form ensure precise tuning in compact designs.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 57 pF;

1N5465 by Onsemi is a varactor diode with a min quality factor of 550 and max reverse current of 0.02 uA. It is used in applications requiring variable capacitance diodes, such as RF tuning circuits due to its abrupt variable capacitance classification. With a nominal capacitance of 15 pF and breakdown voltage of 30 V, it operates b/w -65 to 175 °C for various electronic designs.

BB249TRL13 from NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a min capacitance ratio of 8, comes in a round glass package, and supports surface mount technology. Ideal for RF tuning and voltage-controlled oscillators.

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE;

LV2205RL by Onsemi is a Varactor Diode with 15pF capacitance, 25V breakdown voltage, and 400 min quality factor. It is ideal for applications requiring variable capacitance diodes in temperatures up to 150 °C.

1N5699 by Onsemi is a Varactor Diode with 12pF capacitance, 65V breakdown voltage, and 0.4W power dissipation. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 °C to 175°C.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

1N4803 by Onsemi is a varactor diode with a min quality factor of 15, max reverse current of 0.000000005 uA, and nominal capacitance of 10 pF. It is used in applications requiring variable capacitance diodes for tuning circuits at temperatures ranging from -65 to 150 °C.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

MV2101 by Onsemi is a single varactor diode with a min quality factor of 450, ideal for high frequency to ultra high frequency applications. It has a nominal capacitance of 6.8 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems. With a breakdown voltage of 30 V and abrupt variable capacitance classification, this through-hole diode offers precise tuning capabilities in cylindrical package style.

1N5709 by Onsemi is a varactor diode with 82pF nominal capacitance, 65V breakdown voltage, and 0.00000002uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification.