BSS138NH6327XTSA2 by Infineon Technologies | Transistors

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Manufacturer	Infineon Technologies
Manufacturer's Part Number	BSS138NH6327XTSA2
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Power Dissipation Ambient: .36 W; Terminal Form: GULL WING;
Datasheet	BSS138NH6327XTSA2 Datasheet
In Stock	1,736,039

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	.23 A
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.36 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	.36 W
Maximum Drain-Source On Resistance:	3.5 ohm
Moisture Sensitivity Level (MSL):	1
Other Names:	BSS138NH6327XTSA1 SP000919330 BSS138N H6327-ND BSS138NH6327XTSA2DKR BSS138NH6327XTSA2CT BSS138NH6327XTSA2INACTIVE BSS138NH6327XTSA2TR BSS138NH6327XTSA2-ND BSS138N H6327 SP000639080
Maximum Feedback Capacitance (Crss):	3.8 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	60 V
Additional Features:	LOGIC LEVEL COMPATIBLE
Reference Standard:	AEC-Q101; IEC-61249-2-21
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,736,039	-	-

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