SQ2309ES-T1_GE3 by Vishay Intertechnology | Transistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	SQ2309ES-T1_GE3
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 40; JESD-30 Code: R-PDSO-G3; Maximum Operating Temperature: 175 Cel;
Datasheet	SQ2309ES-T1_GE3 Datasheet
In Stock	48,353

NAME	DESCRIPTION
Other Names:	SQ2309ES-T1_GE3CT SQ2309ES-T1_GE3DKR SQ2309ES-T1_GE3TR
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	40
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Feedback Capacitance (Crss):	30 pF
Maximum Drain Current (ID):	1.7 A
JEDEC-95 Code:	TO-236
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	YES
No. of Terminals:	3
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Peak Reflow Temperature (C):	260
Maximum Drain-Source On Resistance:	.335 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
48,353	-	-

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N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Qualification: Not Qualified; Additional Features: LOW THRESHOLD; Minimum DS Breakdown Voltage: 60 V;