2 Varactor Diodes 1,608

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Package Body Material	Config	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	JEDEC-95 Code	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio
934042240115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G2			Not Qualified	.2 W		1.6% MATCHED SETS AVAILABLE			30 V				SILICON	17.5
934042230135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-G2			Not Qualified		38.5 pF			10 %	32 V	e3			SILICON	13.5
BB241TRL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY		1		LONG FORM						O-LELF-R2		ISOLATED	Not Qualified			3% MATCHED SETS ARE AVAILABLE							SILICON	21
934055720115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-F2			Not Qualified		31.75 pF			7.72 %	32 V	e3			SILICON	11
BB809T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel			O-LALF-W2		ISOLATED	Not Qualified		39 pF	CAPACITANCE MATCHED TO 3% FOR ANY TWO DIODES	DO-34		30 V				SILICON	8
934050200335	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-F2			Not Qualified		19.74 pF			7.7 %		e3			SILICON	8.45
BB145B	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE			1		SMALL OUTLINE	Varactors	8 V			Tin (Sn)	R-PDSO-F2	1		Not Qualified		6.8 pF			5.88 %	6 V	e3	30	260	SILICON	2.2
BB417113	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2		ISOLATED	Not Qualified				DO-34		30 V				SILICON	2
934050190115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-F2			Not Qualified		38.5 pF	EXCELLENT MATCHING TO 2% DMA		10 %	32 V	e3			SILICON	13.5
BB152T/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-G2			Not Qualified		57 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE		8.77 %	32 V	e3			SILICON	20.6
934053250335	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-F2			Not Qualified		19.11 pF			4.66 %	32 V	e3			SILICON	8.45
BB405B133	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2		ISOLATED	Not Qualified			3% MATCHED SETS AVAILABLE	DO-34		30 V				SILICON	7.6
934018000115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE					TIN	R-PDSO-G2	1		Not Qualified		12.5 pF			36 %		e3			SILICON	12
BB182	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	35 V	125 Cel	-55 Cel	TIN	R-PDSO-F2			Not Qualified		57 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE		8.77 %	32 V	e3			SILICON	20.6
933202800115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE			1		SMALL OUTLINE						R-PDSO-F2			Not Qualified		4.2 pF			7.14 %			NOT SPECIFIED	NOT SPECIFIED	SILICON	1.65
BB145BT/R	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE			1		SMALL OUTLINE					TIN	R-PDSO-F2			Not Qualified		6.8 pF			5.88 %	6 V	e3			SILICON	2.2
BB151	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE			1		SMALL OUTLINE	Varactors	10 V			TIN	R-PDSO-G2			Not Qualified		19.1 pF					e3			SILICON	1.45
BB143,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE			1		SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-F2	NOT APPLICABLE		Not Qualified		5.3 pF					e3	NOT SPECIFIED	NOT SPECIFIED	SILICON	2.1
BB157/TM	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE						R-PDSO-G2			Not Qualified					7.75 %					SILICON	11
BB405B116	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2		ISOLATED	Not Qualified			3% MATCHED SETS AVAILABLE	DO-34		30 V				SILICON	7.6
BB809153	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2		ISOLATED	Not Qualified			3% MATCHED SETS AVAILABLE	DO-34		30 V				SILICON	8
BB187	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	35 V	125 Cel	-55 Cel	TIN	R-PDSO-F2			Not Qualified		29.3 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE			32 V	e3			SILICON	11
BB187,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	35 V	125 Cel	-55 Cel	TIN	R-PDSO-F2			Not Qualified		29.3 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE			32 V	e3			SILICON	11
BB182,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	35 V	125 Cel	-55 Cel	TIN	R-PDSO-F2			Not Qualified		57 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE		8.77 %	32 V	e3			SILICON	20.6
BB156/T3	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE			1		SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-G2	1		Not Qualified		16 pF			10 %		e3	30	260	SILICON	2.7
934057033115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE					TIN	R-PDSO-G2			Not Qualified		40.65 pF			7.75 %		e3			SILICON	14.85
934047520135	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE					TIN	R-PDSO-G2			Not Qualified		69 pF	EXCELLENT MATCHING TO 2% DMA				e3			SILICON	19.5
BB131-T	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-G2			Not Qualified		12.5 pF			36 %	30 V	e3			SILICON	12
BB809-TAPE-REEL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel			O-LALF-W2		ISOLATED	Not Qualified			3% MATCHED SETS ARE AVAILABLE			30 V				SILICON	8
BB132-T	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G2			Not Qualified		67.5 pF	1% MATCHED SETS OF 4 DIODES AND 2% MATCHED SETS OF 15 DIODES ARE AVAILABLE		11.1 %	30 V				SILICON	24
BB405B113	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel	-55 Cel		O-LALF-W2		ISOLATED	Not Qualified			3% MATCHED SETS AVAILABLE	DO-34		30 V				SILICON	7.6
934047500115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-F2			Not Qualified		57 pF			8.77 %	32 V	e3			SILICON	20.6
BB152,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	35 V	125 Cel	-55 Cel	TIN	R-PDSO-G2			Not Qualified		57 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE		8.77 %	32 V	e3			SILICON	20.6
BB240TRL13	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY		1		LONG FORM						O-LELF-R2		ISOLATED	Not Qualified			3% MATCHED SETS ARE AVAILABLE							SILICON	14
BB154	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE						R-PDSO-G2			Not Qualified		18.5 pF	2% MATCHED SETS OF 15 DIODES ARE AVAILABLE							SILICON	9
BB134-T	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G2			Not Qualified		17.5 pF	0.5% MATCHED SETS OF 4 DIODES AND 2% MATCHED SETS OF 15 DIODES ARE AVAILABLE			30 V				SILICON	8.9
934055676115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE			1		SMALL OUTLINE						R-PDSO-F2			Not Qualified		6.9 pF			7.25 %			NOT SPECIFIED	NOT SPECIFIED	SILICON	2
BB202LX	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE			1		CHIP CARRIER			85 Cel	-55 Cel		R-PBCC-N2			Not Qualified		30.85 pF			8.59 %					SILICON	2.5
BB910-TAPE-REEL	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.01 uA	1	28 V	LONG FORM			100 Cel			O-LALF-W2		ISOLATED	Not Qualified			CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES			32 V				SILICON	14
BB119136	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	GLASS	SINGLE		.05 uA	1	15 V	LONG FORM			150 Cel			O-LALF-W2		ISOLATED	Not Qualified				DO-35		15 V				SILICON	1.3
934055721115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE						R-PDSO-F2			Not Qualified		50 pF			6 %	34 V				SILICON	17
933215290115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE			1		SMALL OUTLINE					TIN	R-PDSO-F2			Not Qualified		4.6 pF			10.11 %		e3			SILICON	2
BB241TRL13	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE	VERY HIGH FREQUENCY		1		LONG FORM						O-LELF-R2		ISOLATED	Not Qualified			3% MATCHED SETS ARE AVAILABLE							SILICON	21
BB187LX	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		CHIP CARRIER			125 Cel	-55 Cel	TIN	R-PBCC-N2			Not Qualified		31.75 pF	2% MATCHED SETS OF 5 DIODES ARE AVAILABLE		7.71 %	32 V	e3			SILICON	11
BB215TRL13	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	END	WRAP AROUND	2	YES	ROUND	GLASS	SINGLE	ULTRA HIGH FREQUENCY		1		LONG FORM						O-LELF-R2		ISOLATED	Not Qualified			3% MATCHED SETS ARE AVAILABLE							SILICON	7.6
BB150	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE						R-PDSO-G2			Not Qualified		42 pF			9.52 %					SILICON	14
BB159	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V			TIN	R-PDSO-G2			Not Qualified		18.75 pF			4 %		e3			SILICON	8.2
934055720335	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	PLASTIC/EPOXY	SINGLE	VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-F2			Not Qualified		31.75 pF			7.72 %	32 V	e3			SILICON	11

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.