2 Varactor Diodes 1,608

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Part	Manufacturer	Diode Type	Terminal Position	Terminal Form	No. of Terminals	Surface Mount	Package Shape	Minimum Quality Factor	Package Body Material	Config	Variable Capacitance Diode Classification	Frequency Band	Maximum Reverse Current	No. of Elements	Reverse Test Voltage	Package Style (Meter)	Sub-Category	Maximum Repetitive Peak Reverse Voltage	Maximum Operating Temperature	Minimum Operating Temperature	Terminal Finish	JESD-30 Code	Moisture Sensitivity Level (MSL)	Case Connection	Qualification	Maximum Power Dissipation	Nominal Diode Capacitance	Additional Features	JEDEC-95 Code	Diode Cap Tolerance	Minimum Breakdown Voltage	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Diode Element Material	Minimum Diode Capacitance Ratio	Reference Standard
BB640E6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE					TIN	R-PDSO-G2	1		Not Qualified							e3			SILICON	19.5
2803	Api Technologies	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	150	GLASS	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY		1		LONG FORM						O-LALF-W2		ISOLATED	Not Qualified		10 pF		DO-7		22 V				SILICON	4.9
BB135,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	TIN	R-PDSO-G2	1		Not Qualified		19.25 pF				30 V	e3	30	260	SILICON	8.9
1N5446A	Microsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	350	GLASS	SINGLE	ABRUPT			1		LONG FORM			175 Cel		TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	18 pF	HIGH RELIABILITY	DO-7	10 %	30 V	e0			SILICON	2.6
SMVA1248-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY	.02 uA	1	12 V	SMALL OUTLINE		15 V	125 Cel	-55 Cel		R-PDSO-F2				.25 W	17 pF				15 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	10.8	AEC-Q101
SMV1236-040LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	S BAND		1		CHIP CARRIER	Varactors	15 V	175 Cel	-55 Cel		R-PBCC-N2	1		Not Qualified	.25 W	17 pF	LOW NOISE		8.82 %	15 V			260	SILICON	1.6
BB639E7904HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-G2	1				38.3 pF	LOW INDUCTANCE		5.26 %	30 V	e3			SILICON	9.8
MA46H120	TE Connectivity	VARIABLE CAPACITANCE DIODE	DUAL	NO LEAD	2	YES	RECTANGULAR	3000	UNSPECIFIED	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	15 V				R-XDSO-N2			Not Qualified	.1 W	1.1 pF				20 V				GALLIUM ARSENIDE
SMV1249-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	600	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		.02 uA	1	12 V	SMALL OUTLINE		15 V	125 Cel	-55 Cel	TIN	R-PDSO-F2	1		Not Qualified	.25 W	31 pF				15 V	e3		260	SILICON	11
SMV1247-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	1500	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		.02 uA	1	12 V	SMALL OUTLINE		15 V	125 Cel	-55 Cel	Matte Tin (Sn)	R-PDSO-F2	1		Not Qualified	.25 W	7 pF				15 V	e3	40	260	SILICON	9.5
BBY6502VH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-F2	1				29.5 pF			4.41 %	15 V	e3			SILICON	10
SMV1232-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	1400	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	S BAND		1		SMALL OUTLINE	Varactors	15 V			TIN	R-PDSO-F2	1		Not Qualified	.25 W	2.6 pF	LOW NOISE		10 %	15 V	e3		260	SILICON	1.5
BBY5303WE6327HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			125 Cel	-55 Cel	TIN	R-PDSO-G2	1				5.3 pF			9.43 %	6 V	e3			SILICON	1.8
1N5470B	Microsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	500	GLASS	SINGLE	ABRUPT			1		LONG FORM			175 Cel		TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	33 pF	HIGH RELIABILITY	DO-7	5 %	30 V	e0			SILICON	2.9
BB639CE7904HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-G2	1				39 pF			7.01 %	35 V	e3			SILICON	9.5
SMV1213-040LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		UNSPECIFIED	SINGLE	HYPERABRUPT	S BAND		1		CHIP CARRIER	Varactors	12 V	175 Cel	-55 Cel		R-XBCC-N2	1		Not Qualified		19 pF				16 V			260	SILICON	2
BBY5502VH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE			150 Cel	-55 Cel	MATTE TIN	R-PDSO-F2	1				18.6 pF			5.66 %	16 V	e3			SILICON	2
1N5470A	Microsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	500	GLASS	SINGLE	ABRUPT			1		LONG FORM			175 Cel		TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	33 pF	HIGH RELIABILITY	DO-7	10 %	30 V	e0			SILICON	2.9
SMV2019-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	500	PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	22 V			Matte Tin (Sn)	R-PDSO-F2	1		Not Qualified	.25 W	.8 pF	LOW NOISE		18.75 %	22 V	e3	40	260	SILICON	2.3
BB171X	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	ABRUPT	VERY HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE		32 V	125 Cel	-55 Cel		R-PDSO-G2	1				57 pF			8.77 %	32 V			260	SILICON	20.6	IEC-60134
BB659C02VH7902XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel	MATTE TIN	R-PDSO-F2					39 pF			7.01 %	35 V	e3			SILICON	9.5
BBY5303WE6327XT	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-G2					5.3 pF			9.43 %	6 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	1.8
BBY5802VH6327XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-F2	1				18.3 pF			4.89 %	10 V	e3			SILICON	1.15
SMV1430-040LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		PLASTIC/EPOXY							CHIP CARRIER						R-PBCC-N2	1		Not Qualified									260	SILICON
SMVA1253-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY	.02 uA	1	12 V	SMALL OUTLINE		15 V	125 Cel	-55 Cel		R-PDSO-F2				.25 W	53 pF				15 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	11	AEC-Q101
1SV290	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE			.01 uA	1	28 V	SMALL OUTLINE	Varactors	35 V	125 Cel		Tin/Lead (Sn/Pb)	R-PDSO-F2			Not Qualified		45.25 pF	2.5% MATCHED GROUP AVAILABLE, SMALL TRACKING ERROR		9.39 %	30 V	e0			SILICON	15
1SV290B	Toshiba	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	35 V	125 Cel		TIN LEAD	R-PDSO-F2			Not Qualified			2% MATCHED GROUP AVAILABLE, SMALL TRACKING ERROR		9.39 %	30 V	e0			SILICON	14.8
BB639-E7904XT	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	ABRUPT	VERY HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel	MATTE TIN	R-PDSO-G2					38.3 pF			5.26 %	30 V	e3			SILICON	9.8
SMV2025-040LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	ULTRA HIGH FREQUENCY	.02 uA	1	19 V	CHIP CARRIER		20 V	175 Cel	-55 Cel		R-PBCC-N2				.25 W	4.65 pF			9.68 %	20 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	2.2
BB202,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE				1		SMALL OUTLINE	Varactors	6 V	85 Cel	-55 Cel	TIN	R-PDSO-F2	1		Not Qualified					8.59 %		e3	30	260	SILICON	2.5
BB639C	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V				R-PDSO-G2	1		Not Qualified		39 pF			7.01 %	35 V				SILICON	9.5
MA46H120-W	M/a-com Technology Solutions	VARIABLE CAPACITANCE DIODE	DUAL	NO LEAD	2	YES	RECTANGULAR	3000	UNSPECIFIED	SINGLE	HYPERABRUPT	VERY HIGH FREQUENCY		1		SMALL OUTLINE						R-XDSO-N2			Not Qualified	.1 W	1.1 pF				20 V				GALLIUM ARSENIDE
SMV1206-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE			125 Cel	-55 Cel		R-PDSO-F2			Not Qualified	.25 W	11.6 pF			8.62 %	22 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	4.45
SMV1231-040LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	S BAND		1		CHIP CARRIER	Varactors	15 V	175 Cel	-55 Cel		R-PBCC-N2	1			.75 W	1.58 pF	LOW NOISE		9.21 %	15 V			260	SILICON	1.45
SMV1253-040LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	350	PLASTIC/EPOXY	SINGLE	HYPERABRUPT		.02 uA	1	12 V	CHIP CARRIER		15 V	125 Cel	-55 Cel		R-PBCC-N2	1			.25 W	53 pF				15 V			260	SILICON	11
BB148	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY	.01 uA	1	30 V	SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	TIN	R-PDSO-G2			Not Qualified		39.3 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE			30 V	e3			SILICON	14.5
BBY53-03WE6327	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT			1		SMALL OUTLINE	Varactors	6 V			MATTE TIN	R-PDSO-G2	1		Not Qualified		5.3 pF				6 V	e3		260	SILICON	1.8
SMV1232-040LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE	HYPERABRUPT	S BAND		1		CHIP CARRIER	Varactors	15 V	175 Cel	-55 Cel		R-PBCC-N2	1		Not Qualified	.75 W	2.6 pF	LOW NOISE		10 %	15 V			260	SILICON	1.5
1N5470	Onsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	500	GLASS	SINGLE	ABRUPT		.00000002 uA	1	25 V	LONG FORM	Varactors	30 V	175 Cel	-65 Cel	TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	33 pF		DO-7	20 %	30 V	e0			SILICON	2.9
1N5470C	Microsemi	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	500	GLASS	SINGLE	ABRUPT			1		LONG FORM			175 Cel		TIN LEAD	O-LALF-W2		ISOLATED	Not Qualified	.4 W	33 pF	HIGH RELIABILITY	DO-7	2 %	30 V	e0			SILICON	2.9
BB149A,115	NXP Semiconductors	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE	Varactors	30 V	125 Cel	-55 Cel	TIN	R-PDSO-G2			Not Qualified		19.74 pF	2% MATCHED SETS OF 10 DIODES ARE AVAILABLE		7.7 %	30 V	e3			SILICON	8.45
BB55502VH7912XTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel		R-PDSO-F2					18.7 pF	LOW INDUCTANCE		6.67 %	30 V		NOT SPECIFIED	NOT SPECIFIED	SILICON	6
JANTXV1N5470B	Defense Logistics Agency	VARIABLE CAPACITANCE DIODE	AXIAL	WIRE	2	NO	ROUND	500	UNSPECIFIED	SINGLE				1		LONG FORM						O-XALF-W2		ISOLATED	Not Qualified	.4 W	33 pF			5 %	30 V				SILICON	2.9	MIL-19500/436A
SMV1231-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	1500	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	S BAND		1		SMALL OUTLINE	Varactors	15 V			Matte Tin (Sn)	R-PDSO-F2	1		Not Qualified	.25 W	1.575 pF	LOW NOISE		9.21 %	15 V	e3	40	260	SILICON	1.5
SMV2202-040LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	500	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	S BAND	.05 uA	1	17.6 V	CHIP CARRIER		22 V	175 Cel	-55 Cel		R-PBCC-N2				.75 W	1.36 pF			12.92 %	22 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
SMV1405-079LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	DUAL	FLAT	2	YES	RECTANGULAR	3200	PLASTIC/EPOXY	SINGLE	ABRUPT	S BAND		1		SMALL OUTLINE	Varactors	30 V			MATTE TIN	R-PDSO-F2	1		Not Qualified	.25 W	2.1 pF	LOW NOISE			30 V	e3	40	260	SILICON	4.1
SMV2201-040LF	Skyworks Solutions	VARIABLE CAPACITANCE DIODE	BOTTOM	NO LEAD	2	YES	RECTANGULAR	500	PLASTIC/EPOXY	SINGLE	HYPERABRUPT	S BAND	.05 uA	1	17.6 V	CHIP CARRIER		22 V	175 Cel	-55 Cel		R-PBCC-N2				.75 W	.86 pF			14.62 %	22 V		NOT SPECIFIED	NOT SPECIFIED	SILICON
BB545E7904HTSA1	Infineon Technologies	VARIABLE CAPACITANCE DIODE	DUAL	GULL WING	2	YES	RECTANGULAR		PLASTIC/EPOXY	SINGLE		ULTRA HIGH FREQUENCY		1		SMALL OUTLINE			150 Cel	-55 Cel	TIN	R-PDSO-G2	1				20 pF	LOW INDUCTANCE		7.5 %		e3			SILICON	6.3

Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.