Infineon Technologies - BBY53-03WE6327

  1. Home
  2. Infineon Technologies - BBY53-03WE6327
BBY53-03WE6327 by Infineon Technologies

Image shown is a representation only.

Manufacturer Infineon Technologies
Manufacturer's Part Number BBY53-03WE6327
Description VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet BBY53-03WE6327 Datasheet
In Stock2,909
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Variable Capacitance Diode Classification: HYPERABRUPT
Config: SINGLE
Diode Type: VARIABLE CAPACITANCE DIODE
Maximum Repetitive Peak Reverse Voltage: 6 V
Sub-Category: Varactors
Surface Mount: YES
Terminal Finish: MATTE TIN
JESD-609 Code: e3
Nominal Diode Capacitance: 5.3 pF
Diode Element Material: SILICON
No. of Terminals: 2
Minimum Diode Capacitance Ratio: 1.8
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G2
Minimum Breakdown Voltage: 6 V
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,909 - -

Popular Products

Category Top Products

BB187LX,315 by NXP Semiconductors

BB187LX,315

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SMV1213-004LF by Skyworks Solutions

SMV1213-004LF

Skyworks Solutions

SMV1213-004LF by Skyworks Solutions is a varactor diode with 22pF nominal capacitance, 12V breakdown voltage, and 200 min quality factor. It is commonly used in RF applications for frequency tuning due to its hyperabrupt variable capacitance diode classification and common cathode configuration.
BB159-T by NXP Semiconductors

BB159-T

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BB909B133 by NXP Semiconductors

BB909B133

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
MV104 by Onsemi

MV104

Onsemi

The Onsemi MV104 is a Varactor Diode with 2 elements, common cathode config, and abrupt variable capacitance classification. It has a min quality factor of 100, nominal capacitance of 39.5 pF, and breakdown voltage of 32 V. Ideal for RF applications due to its high-quality factor and precise capacitance control in communication systems.
MMVL3102T1G by Onsemi

MMVL3102T1G

Onsemi

MMVL3102T1G by Onsemi is a varactor diode with a min quality factor of 200, suitable for very high frequency applications. It has a nominal capacitance of 22 pF and a breakdown voltage of 30 V, making it ideal for small outline packages in surface mount configurations.
1N5681 by Onsemi

1N5681

Onsemi

1N5681 by Onsemi is a Varactor Diode with 600 min Quality Factor, 6.8 pF Nominal Capacitance, and 40 V Reverse Test Voltage. It is used in RF applications for frequency tuning due to its abrupt Variable Capacitance Diode classification.
SMVA1248-079LF by Skyworks Solutions

SMVA1248-079LF

Skyworks Solutions

SMVA1248-079LF by Skyworks Solutions is a single varactor diode with hyperabrupt classification. It operates in the ultra high frequency band, with a max reverse current of 0.02 uA. Ideal for applications requiring variable capacitance diodes in small outline packages at temperatures ranging from -55 to 125 °C.
BB156,135 by NXP Semiconductors

BB156,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
PC123 by Msi Electronics

PC123

Msi Electronics

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BBY39 by NXP Semiconductors

BBY39

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
1N5453 by Onsemi

1N5453

Onsemi

1N5453 by Onsemi is a varactor diode with a min quality factor of 200, max reverse current of 0.02 uA, and nominal capacitance of 56 pF. It is used in applications requiring variable capacitance diodes for tuning circuits in electronic devices.
SVC321SPAB by Onsemi

SVC321SPAB

Onsemi

The Onsemi SVC321SPAB is a single varactor diode with a min quality factor of 200 and a max reverse current of 0.1 uA. It has a package style of in-line and is suitable for applications requiring variable capacitance diodes, such as tuning circuits in electronic devices.
934042930115 by NXP Semiconductors

934042930115

NXP Semiconductors

The NXP 934042930115 is a variable capacitance diode ideal for RF tuning applications. It features a max reverse current of 0.01 µA, operates b/w -55 °C to 125 °C, and has a breakdown voltage of 10 V. Its compact design ensures efficient surface mount integration.
MMBV109LT1 by Onsemi

MMBV109LT1

Onsemi

MMBV109LT1 by Onsemi is a varactor diode with a min quality factor of 200, ideal for very high frequency applications. It features a hyperabrupt variable capacitance diode classification and a nominal capacitance of 29 pF. This small outline diode has a max power dissipation of 0.2 W and operates at a min breakdown voltage of 30 V.
BB150135 by NXP Semiconductors

BB150135

NXP Semiconductors

BB150135 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, operates b/w -55 °C to 125 °C, and has a breakdown voltage of 30 V. Ideal for RF tuning circuits, it comes in a small outline package with dual terminals.
934056470215 by NXP Semiconductors

934056470215

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BB142T/R by NXP Semiconductors

BB142T/R

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
TIV23 by Texas Instruments

TIV23

Texas Instruments

TIV23 by Texas Instruments is a single varactor diode with 11 pF nominal capacitance, suitable for ultra high frequency applications. It features a min quality factor of 100 and a max power dissipation of 0.25 W, making it ideal for RF tuning circuits in communication systems.
MDX585C by Texas Instruments

MDX585C

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .225 pF; Minimum Quality Factor: 10;