Msksemi Semiconductor - FDC5614P

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FDC5614P by Msksemi Semiconductor

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Manufacturer Msksemi Semiconductor
Manufacturer's Part Number FDC5614P
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V;
Datasheet FDC5614P Datasheet
In Stock100,489
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): 32 pF
Maximum Drain Current (ID): 3.3 A
Maximum Pulsed Drain Current (IDM): 13.2 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
Minimum Operating Temperature: -55 Cel
No. of Terminals: 6
Minimum DS Breakdown Voltage: 60 V
Maximum Power Dissipation (Abs): 2 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: 2 W
Maximum Drain-Source On Resistance: .105 ohm
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