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| Manufacturer | Msksemi Semiconductor |
|---|---|
| Manufacturer's Part Number | FDC5614P |
| Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V; |
| Datasheet | FDC5614P Datasheet |
| In Stock | 100,489 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Feedback Capacitance (Crss): | 32 pF |
| Maximum Drain Current (ID): | 3.3 A |
| Maximum Pulsed Drain Current (IDM): | 13.2 A |
| Polarity or Channel Type: | P-CHANNEL |
| Surface Mount: | YES |
| Minimum Operating Temperature: | -55 Cel |
| No. of Terminals: | 6 |
| Minimum DS Breakdown Voltage: | 60 V |
| Maximum Power Dissipation (Abs): | 2 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G6 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Power Dissipation Ambient: | 2 W |
| Maximum Drain-Source On Resistance: | .105 ohm |
