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| Manufacturer | Harris Semiconductor |
|---|---|
| Manufacturer's Part Number | RFD14N05LSM9A |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-252AA; Qualification: Not Qualified; Maximum Turn Off Time (toff): 100 ns; |
| Datasheet | RFD14N05LSM9A Datasheet |
| In Stock | 15,115 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Turn On Time (ton): | 60 ns |
| Maximum Drain Current (ID): | 14 A |
| Surface Mount: | YES |
| No. of Terminals: | 2 |
| Terminal Position: | SINGLE |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Turn Off Time (toff): | 100 ns |
| JESD-30 Code: | R-PSSO-G2 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN |
| Maximum Power Dissipation Ambient: | 48 W |
| Maximum Drain-Source On Resistance: | .1 ohm |
| JEDEC-95 Code: | TO-252AA |
| Polarity or Channel Type: | N-CHANNEL |
| Minimum DS Breakdown Voltage: | 50 V |
| Qualification: | Not Qualified |
| Additional Features: | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |









