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Manufacturer | Texas Instruments |
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Manufacturer's Part Number | CSD19537Q3T |
Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: DRAIN; Terminal Position: DUAL; Additional Features: AVALANCHE RATED; |
Datasheet | CSD19537Q3T Datasheet |
In Stock | 4,668 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 9.7 A |
Maximum Pulsed Drain Current (IDM): | 219 A |
Surface Mount: | YES |
Terminal Finish: | MATTE TIN |
No. of Terminals: | 8 |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | S-PDSO-N8 |
No. of Elements: | 1 |
Package Shape: | SQUARE |
Terminal Form: | NO LEAD |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | DRAIN |
Maximum Drain-Source On Resistance: | .0166 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Avalanche Energy Rating (EAS): | 55 mJ |
Maximum Feedback Capacitance (Crss): | 17.3 pF |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e3 |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 100 V |
Additional Features: | AVALANCHE RATED |
Peak Reflow Temperature (C): | 260 |