SINGLE Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

BSS138

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

.35 W

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

e3

BSS138BK,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.42 W

ENHANCEMENT MODE

1

.36 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.36 A

1

e3

30

260

IRF9640STRLPBF

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

125 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

44 A

700 mJ

11 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.5 ohm

11 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

10

260

FDV301N-NB9V008

Fairchild Semiconductor

N-CHANNEL

SINGLE

YES

.35 W

ENHANCEMENT MODE

1

.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

.5 A

1

e3

30

260

IRFZ44NS

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

94 W

ENHANCEMENT MODE

1

49 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin/Lead (Sn/Pb)

49 A

e0

BSS138AKAR

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.36 W

ENHANCEMENT MODE

1

.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.2 A

2N7002BKW,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.88 W

ENHANCEMENT MODE

1

.31 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

-55 Cel

TIN

.31 A

1

e3

30

260

NDS355AN-NB9L007A

Fairchild Semiconductor

N-CHANNEL

SINGLE

YES

.5 W

ENHANCEMENT MODE

1

1.7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin (Sn)

1.7 A

1

e3

30

260

CSD19536KTT

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

806 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0028 ohm

200 A

SINGLE

R-PSSO-G2

2

DRAIN

AVALANCHE RATED

TO-263AB

e3

30

260

61 pF

IRF7424TRPBF

Infineon Technologies

P-CHANNEL

SINGLE

YES

2.5 W

30 V

1

11 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.0135 ohm

11 A

1

MS-012AA

e3

30

260

CSD18543Q3AT

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

156 A

55 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0156 ohm

12 A

DUAL

R-PDSO-F5

1

DRAIN

AVALANCHE RATED

e3

30

260

6.2 pF

NX3008NBKW,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.31 W

ENHANCEMENT MODE

1

.35 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.35 A

1

e3

30

260

CSD16301Q2

Texas Instruments

N-CHANNEL

SINGLE

YES

2.3 W

PLASTIC/EPOXY

SWITCHING

25 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

20 A

10 mJ

5 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.034 ohm

5 A

DUAL

R-PDSO-N6

1

DRAIN

Not Qualified

e4

30

260

17 pF

PSMN4R8-100BSEJ

NXP Semiconductors

N-CHANNEL

SINGLE

YES

405 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

120 A

1

e3

30

245

MCH3406-TL-E

Onsemi

N-CHANNEL

SINGLE

YES

1 W

ENHANCEMENT MODE

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

3 A

1

e6

NDS7002A_NB9GGTXA

Fairchild Semiconductor

N-CHANNEL

SINGLE

YES

.3 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

1.5 A

.28 A

3

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-65 Cel

2 ohm

.28 A

DUAL

R-PDSO-G3

TO-236AB

5 pF

AUIRF3205

Infineon Technologies

N-CHANNEL

SINGLE

NO

200 W

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

75 A

NOT SPECIFIED

NOT SPECIFIED

CSD19536KTTT

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

806 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0028 ohm

200 A

SINGLE

R-PSSO-G2

2

DRAIN

AVALANCHE RATED

TO-263AB

e3

30

260

61 pF

PMV20ENR

NXP Semiconductors

N-CHANNEL

SINGLE

YES

6.94 W

ENHANCEMENT MODE

1

7.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

7.6 A

CSD18543Q3A

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

60 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

156 A

55 mJ

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0156 ohm

12 A

DUAL

R-PDSO-F5

1

DRAIN

AVALANCHE RATED

e3

30

260

6.2 pF

2N7002BKMB,315

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.715 W

ENHANCEMENT MODE

1

.45 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

-55 Cel

TIN

.45 A

1

e3

30

260

NTP8G202NG

Onsemi

N-CHANNEL

SINGLE

NO

65 W

1

9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

9 A

e3

30

260

IRFS7530TRL7PP

Infineon Technologies

N-CHANNEL

SINGLE

YES

375 W

60 V

1

240 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN OVER NICKEL

.0014 ohm

240 A

1

e3

30

260

AUIRF7759L2TR1

International Rectifier

N-CHANNEL

SINGLE

YES

125 W

1

375 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

375 A

ZVN2110GTA

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

4 ohm

.5 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

FAST SWITCHING

e3

30

260

IRF7749L1TRPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

125 W

1

375 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

375 A

1

NX3008NBK,215

NXP Semiconductors

N-CHANNEL

SINGLE

YES

.42 W

ENHANCEMENT MODE

1

.4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.4 A

1

e3

30

260

IRFR9024PBF

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

42 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8.8 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.28 ohm

8.8 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252AA

e3

10

260

CSD19537Q3T

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

219 A

55 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0166 ohm

9.7 A

DUAL

S-PDSO-N8

1

DRAIN

AVALANCHE RATED

e3

30

260

17.3 pF

FDN5630-F095

Fairchild Semiconductor

N-CHANNEL

SINGLE

YES

.5 W

ENHANCEMENT MODE

1

1.7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin (Sn)

1.7 A

1

e3

30

260

PSMN5R5-60YS,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

130 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

FDC5612-F095

Fairchild Semiconductor

N-CHANNEL

SINGLE

YES

1.6 W

ENHANCEMENT MODE

1

4.3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4.3 A

BUK9Y8R7-60E,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

147 W

ENHANCEMENT MODE

1

86 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

86 A

1

e3

30

260

IRF7416TRPBF-1

Infineon Technologies

P-CHANNEL

SINGLE

YES

2.5 W

1

10 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

1

PSMN040-100MSEX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

91 W

ENHANCEMENT MODE

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

30 A

IRFP460LC

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

280 W

PLASTIC/EPOXY

SWITCHING

500 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

960 mJ

20 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN LEAD

.27 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AC

e0

VNP20N07-E

STMicroelectronics

N-CHANNEL

SINGLE

NO

83 W

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

.07 ohm

e3

PSMN013-100YSEX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

238 W

ENHANCEMENT MODE

1

82 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

82 A

CSD19537Q3

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

100 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

219 A

55 mJ

8

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

MATTE TIN

.0166 ohm

9.7 A

DUAL

S-PDSO-N8

1

DRAIN

AVALANCHE RATED

e3

30

260

17.3 pF

2390

Nte Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.2 ohm

12 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

IRFZ44N

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

94 W

ENHANCEMENT MODE

1

49 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin/Lead (Sn/Pb)

49 A

e0

PSMN075-100MSEX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

65 W

ENHANCEMENT MODE

1

18 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

18 A

NVMFS6H800NT1G

Onsemi

N-CHANNEL

SINGLE

YES

200 W

PLASTIC/EPOXY

80 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

1271 mJ

203 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0021 ohm

203 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

27 pF

AEC-Q101

IRC640PBF

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

72 A

430 mJ

5

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.18 ohm

18 A

SINGLE

R-PSFM-T5

DRAIN

Not Qualified

40

260

ZVP2106GTA

Diodes Incorporated

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

4 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

5 ohm

.45 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

e3

30

260

IRFH7440TRPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

104 W

40 V

1

85 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.0024 ohm

85 A

1

IRFS4010TRL7PP

Infineon Technologies

N-CHANNEL

SINGLE

YES

380 W

ENHANCEMENT MODE

1

190 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN OVER NICKEL

190 A

1

e3

30

260

IRF9640SPBF

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

125 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

11 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.5 ohm

11 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

30

260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.