IRC640PBF by Vishay Intertechnology | Transistors

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Manufacturer	Vishay Intertechnology
Manufacturer's Part Number	IRC640PBF
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 72 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Avalanche Energy Rating (EAS): 430 mJ;
Datasheet	IRC640PBF Datasheet
In Stock	1,537

NAME	DESCRIPTION
Avalanche Energy Rating (EAS):	430 mJ
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	40
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	18 A
Maximum Pulsed Drain Current (IDM):	72 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
No. of Terminals:	5
Minimum DS Breakdown Voltage:	200 V
Qualification:	Not Qualified
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T5
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Case Connection:	DRAIN
Peak Reflow Temperature (C):	260
Maximum Drain-Source On Resistance:	.18 ohm

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,537	-	-

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