SINGLE Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IRF9540

Vishay Intertechnology

P-CHANNEL

SINGLE

NO

150 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

76 A

19 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

TIN LEAD

.2 ohm

19 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

IRLML2402

Infineon Technologies

N-CHANNEL

SINGLE

YES

.28 W

20 V

ENHANCEMENT MODE

1

.76 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.25 ohm

.76 A

1

NVMFS5C404NLT1G

Onsemi

N-CHANNEL

SINGLE

YES

200 W

1

352 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN

352 A

1

e3

30

260

IRFP4137PBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

341 W

1

38 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

38 A

NOT SPECIFIED

NOT SPECIFIED

PMZB420UN,315

NXP Semiconductors

N-CHANNEL

SINGLE

YES

2.7 W

ENHANCEMENT MODE

1

.9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

.9 A

1

e3

30

260

PSMN3R8-100BS,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

306 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

120 A

1

e3

30

245

2SK1975

ROHM

N-CHANNEL

SINGLE

NO

80 W

PLASTIC/EPOXY

SWITCHING

450 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

10 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

80 W

150 Cel

SILICON

TIN LEAD

10 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-247

e0

PSMN045-80YS,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

56 W

ENHANCEMENT MODE

1

24 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

24 A

1

e3

30

260

PSMN3R4-30BLE,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

178 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

120 A

1

e3

30

245

IXTT1N450HV

Littelfuse

N-CHANNEL

SINGLE

YES

520 W

ENHANCEMENT MODE

1

1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

1 A

1

e3

10

260

PSMN016-100YS,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

117 W

ENHANCEMENT MODE

1

51 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

51 A

1

e3

30

260

PSMN041-80YLX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

64 W

ENHANCEMENT MODE

1

25 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

25 A

NVMFS6H800NWFT1G

Onsemi

N-CHANNEL

SINGLE

YES

200 W

PLASTIC/EPOXY

80 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

900 A

1271 mJ

203 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0021 ohm

203 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

27 pF

AEC-Q101

AUIRFR8401TRL

Infineon Technologies

N-CHANNEL

SINGLE

YES

79 W

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

CSD19535KTT

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

451 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0041 ohm

200 A

SINGLE

R-PSSO-G2

2

DRAIN

AVALANCHE RATED

TO-263AB

e3

30

260

38 pF

BUK7Y7R8-80EX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

238 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

100 A

FDP150N10A_F102

Onsemi

N-CHANNEL

SINGLE

NO

91 W

1

50 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

50 A

FDP150N10A-F102

Fairchild Semiconductor

N-CHANNEL

SINGLE

NO

91 W

1

50 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn)

50 A

e3

PSMN3R3-40YS,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

117 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

AUIRFS8407TRL

Infineon Technologies

N-CHANNEL

SINGLE

YES

230 W

1

195 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

195 A

1

AUIRFS8408-7P

Infineon Technologies

N-CHANNEL

SINGLE

YES

294 W

1

240 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

240 A

1

BLF871S,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

BUK7Y72-80EX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

45 W

ENHANCEMENT MODE

1

16 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

16 A

IRF510

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

20 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

20 A

4 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.54 ohm

5.6 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

MRF134

TE Connectivity

N-CHANNEL

SINGLE

17.5 W

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

PSMN7R6-100BSEJ

NXP Semiconductors

N-CHANNEL

SINGLE

YES

296 W

ENHANCEMENT MODE

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

75 A

FDD86540

Onsemi

N-CHANNEL

SINGLE

YES

127 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

228 mJ

50 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.0041 ohm

21.5 A

SINGLE

R-PSSO-G2

1

DRAIN

TO-252

e3

30

260

IRF431

National Semiconductor

N-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

4.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

4.5 A

e0

NDD60N900U1-1G

Onsemi

N-CHANNEL

SINGLE

NO

74 W

1

5.9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

5.9 A

3

e3

30

260

STW56N60M2-4

STMicroelectronics

N-CHANNEL

SINGLE

NO

350 W

1

52 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

52 A

NOT SPECIFIED

NOT SPECIFIED

IRFH8303TRPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

156 W

30 V

1

43 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.0017 ohm

43 A

1

SIJ482DP-T1-GE3

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

69.4 W

1

60 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

60 A

SN7002NE6433

Infineon Technologies

N-CHANNEL

SINGLE

YES

.36 W

ENHANCEMENT MODE

1

.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.2 A

1

260

AUIRFS8407-7P

Infineon Technologies

N-CHANNEL

SINGLE

YES

231 W

1

240 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

240 A

1

ZVN4306GTA

Diodes Incorporated

N-CHANNEL

SINGLE

YES

3 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

15 A

2.1 A

4

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.45 ohm

2.1 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

e3

30

260

IRF9640

Vishay Intertechnology

P-CHANNEL

SINGLE

NO

125 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

44 A

11 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

TIN LEAD

.5 ohm

11 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

PSMN4R2-30MLDX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

65 W

ENHANCEMENT MODE

1

70 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

70 A

PSMN5R8-40YS,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

89 W

ENHANCEMENT MODE

1

90 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

90 A

1

e3

30

260

BF998R-E6327

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DUAL GATE, DEPLETION MODE

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.03 A

1

260

MTD3055VL1

Motorola

N-CHANNEL

SINGLE

YES

48 W

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin/Lead (Sn/Pb)

12 A

e0

PSMN2R4-30YLDX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

106 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

100 A

STB31N65M5

STMicroelectronics

N-CHANNEL

SINGLE

YES

150 W

1

22 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

22 A

NOT SPECIFIED

NOT SPECIFIED

MRF174

TE Connectivity

N-CHANNEL

SINGLE

270 W

ENHANCEMENT MODE

1

13 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

13 A

PSMN011-80YS,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

117 W

ENHANCEMENT MODE

1

67 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

67 A

1

e3

30

260

STP105N3LL

STMicroelectronics

N-CHANNEL

SINGLE

NO

140 W

1

150 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

150 A

NOT SPECIFIED

NOT SPECIFIED

2N7002TR

Fairchild Semiconductor

N-CHANNEL

SINGLE

YES

.2 W

ENHANCEMENT MODE

1

.115 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn85Pb15)

.115 A

1

e0

AUIRFR8403TRL

Infineon Technologies

N-CHANNEL

SINGLE

YES

99 W

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

100 A

1

BLF6G21-10G,135

NXP Semiconductors

N-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.