SINGLE Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

IRFB3407ZPBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

230 W

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

120 A

NOT SPECIFIED

NOT SPECIFIED

IRFS7430TRL7PP

Infineon Technologies

N-CHANNEL

SINGLE

YES

375 W

1

522 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN OVER NICKEL

522 A

1

e3

30

260

IRLZ34

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

88 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

30 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

TIN LEAD

.05 ohm

30 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

e0

MTM15N50

National Semiconductor

N-CHANNEL

SINGLE

NO

250 W

ENHANCEMENT MODE

1

15 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

15 A

e0

PSMN2R6-60PSQ

NXP Semiconductors

N-CHANNEL

SINGLE

NO

326 W

ENHANCEMENT MODE

1

150 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

150 A

PSMN3R0-30YLDX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

91 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

100 A

SI4410DY-T1-A-E3

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

2.5 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

10 A

1

e3

SUM110N10-09

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

437.5 W

ENHANCEMENT MODE

1

110 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

Tin/Lead (Sn/Pb)

110 A

e0

ZVNL120GTA

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

10 ohm

.32 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

e3

30

260

2SK1460LS

Onsemi

N-CHANNEL

SINGLE

NO

40 W

ENHANCEMENT MODE

1

3.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

3.5 A

BF2030-E6814

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DUAL GATE, ENHANCEMENT MODE

1

.04 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.04 A

260

BLF6G20S-45,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

13 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

13 A

CSD19505KTT

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

510 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0038 ohm

200 A

SINGLE

R-PSSO-G3

2

DRAIN

AVALANCHE RATED

e3

30

260

34 pF

GS66508B-TR

Gan Systems

N-CHANNEL

SINGLE

YES

UNSPECIFIED

SWITCHING

650 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

VERY HIGH FREQUENCY BAND

60 A

30 A

4

CHIP CARRIER

HIGH ELECTRON MOBILITY

150 Cel

GALLIUM NITRIDE

-55 Cel

Gold (Au) - with Nickel (Ni) barrier

.063 ohm

30 A

BOTTOM

R-XBCC-N4

3

SOURCE

e4

30

260

1.5 pF

IRF9Z14STRLPBF

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

43 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

27 A

140 mJ

6.7 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn)

.5 ohm

6.7 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

30

260

IRFM210BTF

Fairchild Semiconductor

N-CHANNEL

SINGLE

YES

2 W

ENHANCEMENT MODE

1

.77 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

.77 A

e0

IRFP9240

Vishay Intertechnology

P-CHANNEL

SINGLE

NO

150 W

PLASTIC/EPOXY

SWITCHING

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

48 A

790 mJ

12 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.5 ohm

12 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AC

e0

PMPB20EN,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

12.5 W

ENHANCEMENT MODE

1

7.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

7.2 A

1

e3

30

260

PSMN020-30MLCX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

33 W

ENHANCEMENT MODE

1

31.8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

31.8 A

SI4410DY

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

2.5 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

10 A

e0

SI4850EY-T1

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

3.3 W

ENHANCEMENT MODE

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin/Lead (Sn/Pb)

6 A

e0

STB36NM60ND

STMicroelectronics

N-CHANNEL

SINGLE

YES

190 W

1

29 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

29 A

1

e3

30

245

STW10N105K5

STMicroelectronics

N-CHANNEL

SINGLE

NO

130 W

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

6 A

NOT SPECIFIED

NOT SPECIFIED

AOT2500L

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE

NO

375 W

ENHANCEMENT MODE

1

152 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

152 A

CPC5603CTR

Littelfuse

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

415 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

14 ohm

.005 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

HIGH RELIABILITY

e3

30

260

FDD8896-NBSW006

Fairchild Semiconductor

N-CHANNEL

SINGLE

YES

.08 W

ENHANCEMENT MODE

1

94 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN

94 A

1

e3

30

260

FDD8896_NF054

Fairchild Semiconductor

N-CHANNEL

SINGLE

YES

.08 W

ENHANCEMENT MODE

1

94 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

94 A

IRF520SPBF

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

60 W

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

9.2 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn)

.27 ohm

9.2 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

40

260

IRFP350LCPBF

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

190 W

PLASTIC/EPOXY

SWITCHING

400 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

16 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.3 ohm

18 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AC

e3

30

260

IRFR9014TR

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

25 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

5.1 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.5 ohm

5.1 A

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

TO-252AA

e0

IRFSL7430PBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

375 W

1

195 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

195 A

1

IRLI540GPBF

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

48 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

68 A

400 mJ

17 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.077 ohm

17 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

e3

PSMN2R8-80BS,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

306 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

120 A

1

e3

30

245

SI4850EY

Vishay Intertechnology

N-CHANNEL

SINGLE

1.7 W

ENHANCEMENT MODE

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

6 A

1

SUM110N06-05L-E3

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

230 W

ENHANCEMENT MODE

1

110 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

110 A

ZVN4206GVTA

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

8 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

1 ohm

1 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

FAST SWITCHING

e3

30

260

BUK7Y38-100EX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

95 W

ENHANCEMENT MODE

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

30 A

CSD18535KTT

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

616 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0029 ohm

200 A

SINGLE

R-PSSO-G3

2

DRAIN

AVALANCHE RATED

e3

30

260

31 pF

IRLZ14SPBF

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

43 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

10 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

.2 ohm

10 A

SINGLE

R-PSSO-G2

3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-263AB

JANSR2N7392

Infineon Technologies

N-CHANNEL

SINGLE

NO

3 W

UNSPECIFIED

SWITCHING

500 V

PIN/PEG

SQUARE

ENHANCEMENT MODE

1

72 A

500 mJ

18 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

18 A

SINGLE

S-XSFM-P3

1

ISOLATED

Qualified

RADIATION HARDENED

TO-254AA

e0

MIL-19500/661B

JANSR2N7482T3

Infineon Technologies

N-CHANNEL

SINGLE

NO

75 W

UNSPECIFIED

SWITCHING

30 V

PIN/PEG

RECTANGULAR

ENHANCEMENT MODE

1

72 A

117 mJ

18 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.03 ohm

18 A

SINGLE

R-XSFM-P3

ISOLATED

Qualified

RADIATION HARDENED

TO-257AA

e0

JANSR2N7500U5

Infineon Technologies

N-CHANNEL

SINGLE

YES

25 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

130 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

36 A

56 mJ

9 A

15

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

.13 ohm

9 A

BOTTOM

S-CBCC-N15

Qualified

RADIATION HARDENED

e0

JANTXVR2N7485U3

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 W

CERAMIC, METAL-SEALED COFIRED

130 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

80 A

65 mJ

20 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN LEAD

20 A

BOTTOM

R-CBCC-N3

DRAIN

Qualified

RADIATION HARDENED

e0

MIL-19500/704

PSMN011-60MLX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

91 W

ENHANCEMENT MODE

1

61 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

61 A

PSMN2R8-25MLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

88 W

ENHANCEMENT MODE

1

70 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

70 A

1

e3

30

260

STB27NM60ND

STMicroelectronics

N-CHANNEL

SINGLE

YES

160 W

1

21 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

21 A

1

e3

30

245

STW7N105K5

STMicroelectronics

N-CHANNEL

SINGLE

NO

110 W

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4 A

NOT SPECIFIED

NOT SPECIFIED

AUIRFB8405

Infineon Technologies

N-CHANNEL

SINGLE

NO

163 W

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

120 A

NOT SPECIFIED

NOT SPECIFIED

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.