SINGLE Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

BUK7Y6R0-60EX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

195 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

100 A

BUK7Y7R6-40EX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

94.3 W

ENHANCEMENT MODE

1

79 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

79 A

CEDM7002AETR

Central Semiconductor

N-CHANNEL

SINGLE

YES

.1 W

60 V

ENHANCEMENT MODE

1

.3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.4 ohm

.3 A

CPH6355-TL-H

Onsemi

P-CHANNEL

SINGLE

YES

1.6 W

1

3 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

3 A

1

e6

30

260

CSD13202Q2

Texas Instruments

N-CHANNEL

SINGLE

YES

2.7 W

PLASTIC/EPOXY

SWITCHING

12 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

76 A

20 mJ

22 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.0116 ohm

14.4 A

DUAL

S-PDSO-N6

1

DRAIN

AVALANCHE RATED

e4

30

260

56 pF

FCMT199N60

Onsemi

N-CHANNEL

SINGLE

YES

208 W

1

20.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

20.2 A

1

30

260

FDMS86380_F085

Fairchild Semiconductor

N-CHANNEL

SINGLE

YES

75 W

PLASTIC/EPOXY

SWITCHING

80 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

16 mJ

50 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

31 ns

-55 Cel

30 ns

MATTE TIN

13.4 ohm

50 A

DUAL

R-PDSO-N5

1

DRAIN

AVALANCHE ENERGY RATED

e3

30

260

14 pF

AEC-Q101

FDMS86380-F085

Onsemi

N-CHANNEL

SINGLE

YES

75 W

PLASTIC/EPOXY

SWITCHING

80 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

16 mJ

50 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

31 ns

-55 Cel

30 ns

MATTE TIN

13.4 ohm

50 A

DUAL

R-PDSO-N5

1

DRAIN

AVALANCHE ENERGY RATED

e3

30

260

14 pF

AEC-Q101

IRF7406TRPBF-1

Infineon Technologies

P-CHANNEL

SINGLE

YES

2.5 W

1

5.8 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

5.8 A

1

IRF7739L1TRPBF

Infineon Technologies

N-CHANNEL

SINGLE

YES

125 W

1

375 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

375 A

1

IRF8714TRPBF-1

Infineon Technologies

N-CHANNEL

SINGLE

YES

2.5 W

1

14 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

14 A

1

IRF9640L

Vishay Intertechnology

P-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

200 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.5 ohm

11 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

NOT SPECIFIED

NOT SPECIFIED

IRFC110R

International Rectifier

N-CHANNEL

SINGLE

YES

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

IRFS7437TRL7PP

Infineon Technologies

N-CHANNEL

SINGLE

YES

231 W

1

195 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

MATTE TIN OVER NICKEL

195 A

1

e3

30

260

IRFZ34PBF

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

88 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

120 A

30 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

PURE MATTE TIN

.05 ohm

30 A

SINGLE

R-PSFM-T3

1

DRAIN

Not Qualified

TO-220AB

30

260

IRL620STRLPBF

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

50 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

5.2 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

.8 ohm

5.2 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-263AB

e3

IRLZ44STRRPBF

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

150 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

200 A

400 mJ

50 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.028 ohm

50 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-263AB

e3

MRF137

TE Connectivity

N-CHANNEL

SINGLE

100 W

ENHANCEMENT MODE

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

5 A

MRF151

TE Connectivity

N-CHANNEL

SINGLE

300 W

ENHANCEMENT MODE

1

16 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

16 A

NVMFS5C460NLAFT1G

Onsemi

N-CHANNEL

SINGLE

YES

50 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

396 A

107 mJ

78 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0072 ohm

78 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

22 pF

AEC-Q101

PSMN1R5-30YL,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

109 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

PSMN2R0-30PL,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

211 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

100 A

1

e3

PSMN5R6-100BS,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

306 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

245

PSMN6R5-80BS,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

210 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

245

RJK1576DPA-00#J5A

Renesas Electronics

N-CHANNEL

SINGLE

YES

65 W

150 V

1

25 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.058 ohm

25 A

NOT SPECIFIED

NOT SPECIFIED

STB80NF03L-04T

STMicroelectronics

N-CHANNEL

SINGLE

YES

300 W

ENHANCEMENT MODE

1

80 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn)

80 A

e3

STW3N170

STMicroelectronics

N-CHANNEL

SINGLE

NO

160 W

1

2.3 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

2.3 A

NOT SPECIFIED

NOT SPECIFIED

SUM45N25-58

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

375 W

ENHANCEMENT MODE

1

45 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin/Lead (Sn/Pb)

45 A

e0

ZVN2120GTA

Diodes Incorporated

N-CHANNEL

SINGLE

YES

2 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2 A

.32 A

4

SMALL OUTLINE

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

10 ohm

.32 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

e3

30

260

ZVN3306FTC

Diodes Incorporated

N-CHANNEL

SINGLE

YES

.25 W

ENHANCEMENT MODE

1

.15 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.15 A

30

260

2387

Nte Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

800 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

3 ohm

4 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

2N6660-2

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

6.25 W

ENHANCEMENT MODE

1

.99 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.99 A

2SK1117

Toshiba

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

100 W

SILICON

1.25 ohm

6 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

2SK1118

Toshiba

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

600 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

45 W

SILICON

TIN LEAD

1.25 ohm

6 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e0

2SK2613(F)

Toshiba

N-CHANNEL

SINGLE

NO

150 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

AON6290

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE

YES

104 W

1

85 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

85 A

1

AOT14N50FD

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE

NO

278 W

1

14 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

14 A

NOT SPECIFIED

NOT SPECIFIED

AOTF4N60

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE

NO

35 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4 A

AOWF4S60

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE

NO

25 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4 A

AUIRFI3205

Infineon Technologies

N-CHANNEL

SINGLE

NO

63 W

1

64 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

64 A

AUIRFIZ44N

Infineon Technologies

N-CHANNEL

SINGLE

NO

45 W

ENHANCEMENT MODE

1

31 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

31 A

BF2030W-E6814

Infineon Technologies

N-CHANNEL

SINGLE

YES

.2 W

DUAL GATE, ENHANCEMENT MODE

1

.04 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.04 A

1

260

BUK553

New Jersey Semiconductor Products

N-CHANNEL

SINGLE

200 V

ENHANCEMENT MODE

1

METAL-OXIDE SEMICONDUCTOR

SILICON

14 A

BUK7Y14-80EX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

147 W

ENHANCEMENT MODE

1

65 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

65 A

BUK9E06-55A,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

300 W

ENHANCEMENT MODE

1

154 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

154 A

e3

BUZ11_R4941

Fairchild Semiconductor

N-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn85Pb15)

30 A

e0

BUZ906

Tt Electronics Plc

P-CHANNEL

SINGLE

NO

METAL

AMPLIFIER

200 V

PIN/PEG

ROUND

ENHANCEMENT MODE

1

2

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

8 A

BOTTOM

O-MBFM-P2

SOURCE

Not Qualified

TO-3

CSD18542KTTT

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

281 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0051 ohm

200 A

SINGLE

R-PSSO-G3

2

DRAIN

AVALANCHE RATED

e3

30

260

14 pF

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.