SINGLE Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

FCPF260N60E

Onsemi

N-CHANNEL

SINGLE

NO

36 W

1

15 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn) - annealed

15 A

e3

NOT SPECIFIED

NOT SPECIFIED

FDC655BN-NBNN007

Fairchild Semiconductor

N-CHANNEL

SINGLE

YES

1.6 W

ENHANCEMENT MODE

1

6.3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

MATTE TIN

6.3 A

1

e3

30

260

FDC655BN_NL

Fairchild Semiconductor

N-CHANNEL

SINGLE

YES

1.6 W

ENHANCEMENT MODE

1

6.3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

6.3 A

FQPF6N90CT

Fairchild Semiconductor

N-CHANNEL

SINGLE

NO

56 W

ENHANCEMENT MODE

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

6 A

e3

IRFS31N20D

Infineon Technologies

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

124 A

420 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

.082 ohm

31 A

SINGLE

R-PSSO-G2

1

DRAIN

IRFZ34STRLPBF

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

88 W

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

120 A

200 mJ

30 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn)

.05 ohm

30 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-263AB

e3

30

260

IRHNJ67434

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 W

ENHANCEMENT MODE

1

3.4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

3.4 A

IRL540PBF

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

150 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

110 A

28 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

.077 ohm

28 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

LOGIC LEVEL COMPATIBLE

TO-220AB

e3

IRLD014PBF

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

1.3 W

PLASTIC/EPOXY

SWITCHING

THROUGH-HOLE

RECTANGULAR

1

1.7 A

3

IN-LINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

MATTE TIN

1.7 A

DUAL

R-PDIP-T3

1

Not Qualified

LOGIC LEVEL COMPATIBLE

e3

30

260

JANSR2N7486U3

Infineon Technologies

N-CHANNEL

SINGLE

YES

75 W

CERAMIC, METAL-SEALED COFIRED

SWITCHING

200 V

NO LEAD

RECTANGULAR

ENHANCEMENT MODE

1

48 A

60 mJ

12 A

3

CHIP CARRIER

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

125 ns

-55 Cel

65 ns

TIN LEAD

.22 ohm

12 A

BOTTOM

R-CBCC-N3

DRAIN

Qualified

RADIATION HARDENED

e0

11 pF

MIL-19500

NP60N04KUG-E1-AY

Renesas Electronics

N-CHANNEL

SINGLE

YES

88 W

1

60 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

60 A

NOT SPECIFIED

NOT SPECIFIED

NTE2987

Nte Electronics

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

80 A

120 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

.12 ohm

20 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

FAST SWITCHING

NOT SPECIFIED

NOT SPECIFIED

NVMFS5844NLWFT3G

Onsemi

N-CHANNEL

SINGLE

YES

107 W

1

61 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

61 A

1

e3

30

260

PJA3435_R1_00001

Panjit International

P-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

20 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

1.2 ohm

.5 A

DUAL

R-PDSO-G3

e3

40

260

PSMN012-80BS,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

148 W

ENHANCEMENT MODE

1

74 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

74 A

1

e3

30

245

PSMN1R2-30YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

215 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

PSMN4R0-25YLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

61 W

ENHANCEMENT MODE

1

84 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

84 A

1

e3

30

260

PSMN4R3-100PS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

338 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

120 A

e3

PSMN4R4-30MLC,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

69 W

ENHANCEMENT MODE

1

70 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

70 A

1

e3

30

260

SI4410DY-REVA

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

2.5 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

10 A

e0

SI4410DY-REVA-E3

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

2.5 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

10 A

1

e3

SI7601DN-T1-E3

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

52 W

1

16 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

16 A

NOT SPECIFIED

NOT SPECIFIED

SI7601DN-T1-GE3

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

52 W

1

16 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

16 A

NOT SPECIFIED

NOT SPECIFIED

SP201

Polyfet R F Devices

N-CHANNEL

SINGLE

20 W

ENHANCEMENT MODE

1

1.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.2 A

STH140N8F7-2

STMicroelectronics

N-CHANNEL

SINGLE

YES

200 W

1

90 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

90 A

NOT SPECIFIED

NOT SPECIFIED

STP360N4F6

STMicroelectronics

N-CHANNEL

SINGLE

NO

300 W

1

120 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

120 A

NOT SPECIFIED

NOT SPECIFIED

SUB45N05-20L-E3

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

3.75 W

ENHANCEMENT MODE

1

45 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn) - with Nickel (Ni) barrier

45 A

1

e3

SUB75N03-04-E3

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

187 W

ENHANCEMENT MODE

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn) - with Nickel (Ni) barrier

75 A

1

e3

TK20J60U(F)

Toshiba

N-CHANNEL

SINGLE

NO

190 W

ENHANCEMENT MODE

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

20 A

ZVN4210GTA

Diodes Incorporated

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

100 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6 A

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

MATTE TIN

1.8 ohm

.8 A

DUAL

R-PDSO-G4

1

DRAIN

Not Qualified

e3

30

260

2N7002-HF

Comchip Technology

SINGLE

.25 A

FET General Purpose Power

10

260

2SK1062(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

.2 W

ENHANCEMENT MODE

1

.2 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.2 A

2SK134

Hitachi

N-CHANNEL

SINGLE

NO

100 W

ENHANCEMENT MODE

1

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

7 A

e0

2SK2036(TE85L,F)

Toshiba

N-CHANNEL

SINGLE

YES

.2 W

ENHANCEMENT MODE

1

.1 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

.1 A

AOTF7S65

Alpha & Omega Semiconductor

N-CHANNEL

SINGLE

NO

35 W

1

7 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

7 A

NOT SPECIFIED

NOT SPECIFIED

ATP204-TL-H

Onsemi

N-CHANNEL

SINGLE

YES

60 W

1

100 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

100 A

1

e6

AUIRF3315S

Infineon Technologies

N-CHANNEL

SINGLE

YES

94 W

1

21 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

21 A

1

AUIRFSL8403

Infineon Technologies

N-CHANNEL

SINGLE

NO

99 W

1

123 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

123 A

1

BLF571,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

3.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

225 Cel

3.6 A

BLF7G22LS-160,112

NXP Semiconductors

N-CHANNEL

SINGLE

ENHANCEMENT MODE

1

36 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

36 A

BUK725R0-40C,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

157 W

ENHANCEMENT MODE

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

75 A

1

e3

30

260

BUK761R6-40E,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

357 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

120 A

1

e3

30

245

BUK761R7-40E,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

324 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

120 A

1

e3

30

245

BUK765R0-100E,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

357 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

120 A

1

e3

30

245

BUK7Y12-40EX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

65 W

ENHANCEMENT MODE

1

52 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

52 A

1

e3

30

260

BUK9Y19-100E,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

167 W

ENHANCEMENT MODE

1

56 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

56 A

1

e3

30

260

BUK9Y3R5-40E,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

167 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

BUK9Y8R5-80EX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

238 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.