SINGLE Power Field Effect Transistors (FET) 2,400+

Reset All
Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

BUK7Y21-40EX

NXP Semiconductors

N-CHANNEL

SINGLE

YES

45 W

ENHANCEMENT MODE

1

33 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

33 A

BUK962R5-60E,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

357 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

120 A

1

e3

30

245

BUK9637-100E,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

96 W

ENHANCEMENT MODE

1

31 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

31 A

1

e3

30

245

BUK963R3-60E,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

293 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

120 A

1

e3

30

245

BUK966R5-60E,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

182 W

ENHANCEMENT MODE

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

75 A

1

e3

30

245

BUK9Y6R0-60E,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

195 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

BUK9Y7R2-60E,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

167 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

260

BUK9Y7R6-40E,115

NXP Semiconductors

N-CHANNEL

SINGLE

YES

95 W

ENHANCEMENT MODE

1

79 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

79 A

1

e3

30

260

ECH8308-TL-H

Onsemi

P-CHANNEL

SINGLE

YES

1.6 W

1

10 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

10 A

1

e6

30

260

FDD86369-F085

Onsemi

N-CHANNEL

SINGLE

YES

150 W

1

90 A

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

-55 Cel

Matte Tin (Sn) - annealed

R-PSSO-G2

1

DRAIN

TO-252AA

e3

30

260

AEC-Q101

FDD86369_F085

Fairchild Semiconductor

N-CHANNEL

SINGLE

YES

150 W

1

90 A

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

-55 Cel

R-PSSO-G2

1

DRAIN

TO-252AA

AEC-Q101

FDD8647L

Onsemi

N-CHANNEL

SINGLE

YES

43 W

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

100 A

33 mJ

52 A

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn) - annealed

.009 ohm

14 A

SINGLE

R-PSSO-G2

1

DRAIN

Not Qualified

TO-252

e3

30

260

FDMS86202

Onsemi

N-CHANNEL

SINGLE

YES

156 W

1

40 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn) - annealed

40 A

1

e3

30

260

IRF7748L1TRPBF

Infineon Technologies

N-CHANNEL

SINGLE

94 W

1

148 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

148 A

1

IRF9630SPBF

Vishay Intertechnology

P-CHANNEL

SINGLE

YES

74 W

PLASTIC/EPOXY

SWITCHING

200 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

6.5 A

2

SMALL OUTLINE

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

Matte Tin (Sn)

.8 ohm

6.5 A

SINGLE

R-PSSO-G2

3

DRAIN

Not Qualified

TO-263AB

e3

30

260

IRFB3256PBF

Infineon Technologies

N-CHANNEL

SINGLE

NO

300 W

1

75 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

75 A

NOT SPECIFIED

NOT SPECIFIED

IRFI530GPBF

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

42 W

PLASTIC/EPOXY

SWITCHING

100 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

39 A

100 mJ

9.7 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn)

.16 ohm

9.7 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

30

260

IRFI9Z24GPBF

Vishay Intertechnology

P-CHANNEL

SINGLE

NO

37 W

PLASTIC/EPOXY

SWITCHING

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

34 A

200 mJ

8.5 A

3

FLANGE MOUNT

Other Transistors

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

Matte Tin (Sn)

.28 ohm

8.5 A

SINGLE

R-PSFM-T3

ISOLATED

Not Qualified

TO-220AB

e3

30

260

IRFPG30PBF

Vishay Intertechnology

N-CHANNEL

SINGLE

NO

125 W

PLASTIC/EPOXY

SWITCHING

1000 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

12 A

180 mJ

3.1 A

3

FLANGE MOUNT

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

MATTE TIN

5 ohm

3.1 A

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-247AC

e3

30

260

NVMFS5C460NLWFT3G

Onsemi

N-CHANNEL

SINGLE

YES

50 W

PLASTIC/EPOXY

40 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

396 A

107 mJ

78 A

5

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

Matte Tin (Sn) - annealed

.0072 ohm

78 A

DUAL

R-PDSO-F5

1

DRAIN

e3

30

260

22 pF

AEC-Q101

NVTFS5826NLWFTWG

Onsemi

N-CHANNEL

SINGLE

YES

22 W

1

20 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn) - annealed

20 A

1

e3

30

260

PSMN1R1-40BS,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

306 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

120 A

1

e3

30

245

PSMN1R5-40PS,127

NXP Semiconductors

N-CHANNEL

SINGLE

NO

338 W

ENHANCEMENT MODE

1

120 A

FET General Purpose Powers

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

120 A

e3

PSMN3R0-60BS,118

NXP Semiconductors

N-CHANNEL

SINGLE

YES

306 W

ENHANCEMENT MODE

1

100 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

TIN

100 A

1

e3

30

245

PSMN3R9-60PSQ

NXP Semiconductors

N-CHANNEL

SINGLE

NO

263 W

ENHANCEMENT MODE

1

130 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

130 A

RFP12N20

Intersil

N-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

12 A

e0

SI4420DY

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

2.5 W

ENHANCEMENT MODE

1

12.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

12.5 A

e0

SI7884DP-T1-E3

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

5.2 W

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Matte Tin (Sn)

12 A

1

e3

STD105N10F7AG

STMicroelectronics

N-CHANNEL

SINGLE

YES

120 W

1

80 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

80 A

NOT SPECIFIED

NOT SPECIFIED

STW46NF30

STMicroelectronics

N-CHANNEL

SINGLE

NO

300 W

1

42 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Matte Tin (Sn)

42 A

e3

SUD40N06-25L

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

75 W

ENHANCEMENT MODE

1

34 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin/Lead (Sn/Pb)

34 A

e0

SUD40N06-25L-E3

Vishay Intertechnology

N-CHANNEL

SINGLE

YES

75 W

ENHANCEMENT MODE

1

30 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

-55 Cel

Matte Tin (Sn) - with Nickel (Ni) barrier

30 A

1

e3

XP161A1355PR-G

Torex Semiconductor

N-CHANNEL

SINGLE

YES

2 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN

4 A

1

e3

10

260

C2T206

Texas Instruments

N-CHANNEL

SINGLE

YES

.3 W

1

.05 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.05 A

C2T211

Texas Instruments

N-CHANNEL

SINGLE

YES

.3 W

1

.05 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

.05 A

BF910

Texas Instruments

N-CHANNEL

SINGLE

YES

.33 W

1

.05 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.05 A

C2T204

Texas Instruments

N-CHANNEL

SINGLE

YES

.3 W

1

.05 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.05 A

C2T212

Texas Instruments

N-CHANNEL

SINGLE

YES

.3 W

1

.05 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

.05 A

3N203A

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

1

.05 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

.05 A

BF353

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

1

.05 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

.05 A

BF907

Texas Instruments

N-CHANNEL

SINGLE

1

.04 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.04 A

C2T213

Texas Instruments

N-CHANNEL

SINGLE

YES

.3 W

1

.05 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

.05 A

BF352

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

1

.05 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

.05 A

BF900

Texas Instruments

N-CHANNEL

SINGLE

YES

.15 W

1

.05 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.05 A

C2T205

Texas Instruments

N-CHANNEL

SINGLE

YES

.3 W

1

.05 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.05 A

BF351

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

1

.05 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

.05 A

3N225

Texas Instruments

N-CHANNEL

SINGLE

NO

.36 W

1

.05 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

200 Cel

.05 A

BF905

Texas Instruments

N-CHANNEL

SINGLE

YES

.15 W

1

.04 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.04 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.