SINGLE Power Field Effect Transistors (FET) 2,400+

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Part RoHS Manufacturer Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum Rise Time (tr) Maximum VCEsat Minimum DS Breakdown Voltage Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Pulsed Drain Current (IDM) Avalanche Energy Rating (EAS) Maximum Fall Time (tf) Maximum Drain Current (Abs) (ID) Nominal Turn Off Time (toff) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Transistor Element Material Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Maximum Gate-Emitter Threshold Voltage Terminal Finish Maximum Drain-Source On Resistance Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Nominal Turn On Time (ton) Maximum Feedback Capacitance (Crss) Reference Standard

CSD18511KTTT

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

156 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0042 ohm

110 A

SINGLE

R-PSSO-G2

2

DRAIN

AVALANCHE RATED

TO-263AB

e3

30

260

306 pF

CSD18542KTT

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

60 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

281 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0051 ohm

200 A

SINGLE

R-PSSO-G3

2

DRAIN

AVALANCHE RATED

e3

30

260

14 pF

CSD18511KTT

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

156 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0042 ohm

110 A

SINGLE

R-PSSO-G2

2

DRAIN

AVALANCHE RATED

TO-263AB

e3

30

260

306 pF

CSD18542KCS

Texas Instruments

N-CHANNEL

SINGLE

NO

200 W

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

1.8

1

400 A

281 mJ

170 A

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

-55 Cel

MATTE TIN

170 A

SINGLE

R-PSFM-T3

DRAIN

e3

14 pF

CSD15571Q2

Texas Instruments

N-CHANNEL

SINGLE

YES

2.5 W

PLASTIC/EPOXY

SWITCHING

20 V

NO LEAD

SQUARE

ENHANCEMENT MODE

1

52 A

18 mJ

22 A

6

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

-55 Cel

NICKEL PALLADIUM GOLD

.0192 ohm

10 A

DUAL

S-PDSO-N6

1

DRAIN

AVALANCHE RATED

e4

30

260

42 pF

CSD18511KCS

Texas Instruments

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

156 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0042 ohm

110 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

e3

306 pF

CSD18510KCS

Texas Instruments

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

40 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

400 A

328 mJ

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0026 ohm

200 A

SINGLE

R-PSFM-T3

DRAIN

AVALANCHE RATED

TO-220AB

e3

551 pF

CSD18510KTTT

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

328 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0026 ohm

200 A

SINGLE

R-PSSO-G2

2

DRAIN

AVALANCHE RATED

TO-263AB

e3

30

260

551 pF

CSD18510KTT

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

40 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

328 mJ

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0026 ohm

200 A

SINGLE

R-PSSO-G2

2

DRAIN

AVALANCHE RATED

TO-263AB

e3

30

260

551 pF

CSD19506KTT

Texas Instruments

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

400 A

832 mJ

3

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

175 Cel

SILICON

-55 Cel

MATTE TIN

.0028 ohm

200 A

SINGLE

R-PSSO-G3

2

DRAIN

AVALANCHE RATED

e3

30

260

55 pF

AD3954A

Analog Devices

N-CHANNEL

SINGLE

NO

DEPLETION MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

e0

AD3955

Analog Devices

N-CHANNEL

SINGLE

NO

DEPLETION MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

e0

AD3954

Analog Devices

N-CHANNEL

SINGLE

NO

DEPLETION MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

e0

AD3958

Analog Devices

N-CHANNEL

SINGLE

NO

DEPLETION MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

Tin/Lead (Sn/Pb)

e0

MMFT1N10E

Onsemi

N-CHANNEL

SINGLE

YES

.8 W

ENHANCEMENT MODE

1

1 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1 A

MMFT2N02EL

Onsemi

N-CHANNEL

SINGLE

YES

.8 W

ENHANCEMENT MODE

1

1.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

1.6 A

BBL4001-1E

Onsemi

N-CHANNEL

SINGLE

NO

35 W

PLASTIC/EPOXY

60 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

296 A

370 mJ

74 A

3

FLANGE MOUNT

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

2 W

150 Cel

SILICON

MATTE TIN

.0098 ohm

74 A

SINGLE

R-PSFM-T3

ISOLATED

TO-220AB

e3

540 pF

MTA5N50E

Onsemi

N-CHANNEL

SINGLE

NO

50 W

ENHANCEMENT MODE

1

5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

5 A

e0

6LN04S

Onsemi

N-CHANNEL

SINGLE

YES

.15 W

ENHANCEMENT MODE

1

.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.2 A

EC4406C

Onsemi

N-CHANNEL

SINGLE

YES

.15 W

ENHANCEMENT MODE

1

.2 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.2 A

FSS802

Onsemi

N-CHANNEL

SINGLE

YES

3 W

ENHANCEMENT MODE

1

12 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

12 A

FSS206

Onsemi

N-CHANNEL

SINGLE

YES

2 W

ENHANCEMENT MODE

1

9 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

9 A

MCH6415

Onsemi

N-CHANNEL

SINGLE

YES

1 W

ENHANCEMENT MODE

1

4 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

4 A

SFT1431-W

Onsemi

N-CHANNEL

SINGLE

NO

15 W

ENHANCEMENT MODE

1

11 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

11 A

e6

NVD4809NHT4G

Onsemi

N-CHANNEL

SINGLE

YES

52 W

1

58 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

175 Cel

Tin (Sn)

58 A

1

e3

BFL4026

Onsemi

N-CHANNEL

SINGLE

NO

35 W

ENHANCEMENT MODE

1

3.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

3.5 A

EFC4602

Onsemi

N-CHANNEL

SINGLE

YES

1.6 W

ENHANCEMENT MODE

1

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

VEC2812

Onsemi

N-CHANNEL

SINGLE

YES

.8 W

ENHANCEMENT MODE

1

1.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

1.5 A

CPH5847

Onsemi

N-CHANNEL

SINGLE

YES

.8 W

ENHANCEMENT MODE

1

1.5 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

1.5 A

TM3055B(TP-FA)

Onsemi

N-CHANNEL

SINGLE

YES

15 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

8 A

NTB85N08L

Onsemi

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

e0

CPH5870

Onsemi

N-CHANNEL

SINGLE

YES

.9 W

ENHANCEMENT MODE

1

1.8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

1.8 A

SFT1403(TP-FA)

Onsemi

N-CHANNEL

SINGLE

YES

20 W

ENHANCEMENT MODE

1

14 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

14 A

NTD15N08

Onsemi

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

SWITCHING

80 V

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

2

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

SINGLE

R-PSSO-G2

DRAIN

Not Qualified

e0

MCH6436-TL-E

Onsemi

N-CHANNEL

SINGLE

YES

1.5 W

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN BISMUTH

6 A

1

e6

30

260

3SK107E

Onsemi

N-CHANNEL

SINGLE

NO

.25 W

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

.03 A

MTV10N100E-RL

Onsemi

N-CHANNEL

SINGLE

YES

250 W

ENHANCEMENT MODE

1

10 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

10 A

MMDFS6N303

Onsemi

N-CHANNEL

SINGLE

YES

2 W

ENHANCEMENT MODE

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

6 A

MTB3N120ET4

Onsemi

N-CHANNEL

SINGLE

YES

125 W

ENHANCEMENT MODE

1

3 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

TIN LEAD

3 A

e0

235

3LN01N

Onsemi

N-CHANNEL

SINGLE

NO

.4 W

ENHANCEMENT MODE

1

.15 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.15 A

NTP85N08L

Onsemi

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

80 V

THROUGH-HOLE

RECTANGULAR

ENHANCEMENT MODE

1

3

FLANGE MOUNT

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN LEAD

SINGLE

R-PSFM-T3

DRAIN

Not Qualified

TO-220AB

e0

MTP8N20

Onsemi

N-CHANNEL

SINGLE

NO

75 W

ENHANCEMENT MODE

1

8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Lead (Sn/Pb)

8 A

e0

2SK543-4

Onsemi

N-CHANNEL

SINGLE

YES

.2 W

ENHANCEMENT MODE

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

.03 A

3SK108Q

Onsemi

N-CHANNEL

SINGLE

NO

.25 W

1

.03 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

.03 A

EMH1303-TL-E

Onsemi

P-CHANNEL

SINGLE

YES

1.5 W

1

7 A

Other Transistors

METAL-OXIDE SEMICONDUCTOR

150 Cel

Tin/Bismuth (Sn/Bi)

7 A

1

e6

SCH2817

Onsemi

N-CHANNEL

SINGLE

YES

.6 W

ENHANCEMENT MODE

1

1.6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

125 Cel

1.6 A

CPH3426

Onsemi

N-CHANNEL

SINGLE

YES

1 W

ENHANCEMENT MODE

1

.8 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

.8 A

EMH1401

Onsemi

N-CHANNEL

SINGLE

YES

1.5 W

ENHANCEMENT MODE

1

6 A

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

6 A

Power Field Effect Transistors (FET)

Power Field Effect Transistors (FET) are electronic devices used in power electronics to control and switch high current and voltage levels. They are commonly used in applications such as motor drives, power supplies, and switching regulators.

The Power FET is a three-terminal device that works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through a gate electrode. The gate electrode is insulated from the channel region by a thin oxide layer, which can be controlled by applying a voltage to the gate terminal. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

Power FETs are designed to handle high current and voltage levels, and have a low on-resistance and high switching speed. They are typically used in applications that require efficient and precise control of power, such as motor drives and power supplies.

Power FETs are available in various types and configurations, including N-channel and P-channel FETs, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as UL (Underwriters Laboratories) and CE (Conformité Européenne), to ensure their safety and performance.