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Manufacturer | Texas Instruments |
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Manufacturer's Part Number | CSD18542KCS |
Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Operating Mode: 1.8; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
Datasheet | CSD18542KCS Datasheet |
In Stock | 3,896 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 170 A |
Maximum Pulsed Drain Current (IDM): | 400 A |
Sub-Category: | FET General Purpose Power |
Surface Mount: | NO |
Terminal Finish: | MATTE TIN |
Maximum Power Dissipation (Abs): | 200 W |
Terminal Position: | SINGLE |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-PSFM-T3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | THROUGH-HOLE |
Operating Mode: | 1.8 |
Maximum Operating Temperature: | 175 Cel |
Case Connection: | DRAIN |
Avalanche Energy Rating (EAS): | 281 mJ |
Maximum Feedback Capacitance (Crss): | 14 pF |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e3 |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 60 V |
Maximum Drain Current (Abs) (ID): | 170 A |