STMicroelectronics - STW11NK100Z

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STW11NK100Z by STMicroelectronics

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Manufacturer STMicroelectronics
Manufacturer's Part Number STW11NK100Z
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 230 W; Operating Mode: ENHANCEMENT MODE; Terminal Position: SINGLE;
Datasheet STW11NK100Z Datasheet
In Stock4,277
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 8.3 A
Maximum Pulsed Drain Current (IDM): 33.2 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: Matte Tin (Sn)
No. of Terminals: 3
Maximum Power Dissipation (Abs): 230 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 1.38 ohm
Avalanche Energy Rating (EAS): 550 mJ
JEDEC-95 Code: TO-247AC
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 1000 V
Qualification: Not Qualified
Additional Features: AVALANCHE RATED, HIGH VOLTAGE
Maximum Drain Current (Abs) (ID): 9 A
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Pricing (USD)

Qty. Unit Price Ext. Price
4,277 $1.700 $7,270.900

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